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P01xxxL
SENSITIVE GATE SCR
FEATURES IT(RMS) = 0.2A VDRM = 100V to 400V Low IGT < 1A max to < 200A
A G K
DESCRIPTION The P01xxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) * IT(AV) * ITSM Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Ta= 25C Ta= 25C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 0.26 0.17 7.5 7 0.24 30 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A SOT23 (Plastic)
I2t dI/dt Tstg Tj Tl
* : Mounted on a ceramic substrate of 8 x 10 x 0.7mm.
Symbol VDRM VRRM
January 1995
Parameter A Repetitive peak off-state voltage Tj = 125C RGK = 1K 100
Voltage B 200 C 300 D 400
Unit V
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P01xxxL
THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient * Parameter Value 500 Unit C/W
* : Mounted on a ceramic substrate of 8 x 10 x 0.7mm.
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.02 W PGM = 1 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10A ITM= VD=VDRM dIG/dt = 0.1A/s 3 x IT(AV) IG = 10mA Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C MAX MIN MIN TYP MAX MAX MAX MAX MAX MIN MAX 25 200 Sensitivity 09 1 0.8 0.1 8 0.5 5 6 1.3 1 100 25 200 50 100 11 4 25 15 15 50 V V V s mA mA V A A V/s s A Unit IGM = 0.5 A (tp = 20 s)
IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 0.4A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A/s tp=100s dV/dt=10V/s VD= 67%VDRM RGK = 1 K
ORDERING INFORMATION
P
SCR PLANAR CURRENT
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01
02
SENSITIVITY
A
L
PACKAGE : L = SOT23 VOLTAGE
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P01xxxL
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb).
P (W)
P (W)
0.25
360
O
0.25 0.20
Rth(j-a) DC
0.20 0.15
= 180
0.15
o
0.10
= 90
= 120
o
o
0.10 0.05
0.05
= 30
o
= 60
o
I T(AV)(A)
Tamb (oC)
0.00 0.00
0.04
0.08
0.12
0.16
0.20
0.00 0
20
40
60
80
100
120
140
Fig.3 : Average on-state current versus tab temperature.
I T(AV) (A)
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a) 1.00
0.25 0.20
= 180
o
0.15
0.10
0.10 0.05
Tamb ( C)
o
Alumine su bst rate: 10 mm*8 mm*0.5mm
tp (s)
0.00
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E +0
1E +1
1 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
8 7 6 5
Tj initial = 25 C
o
10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih Igt
4 3 2 1
Tj(oC)
Number of cycles 20 40 60 80 100 120 140
0
0 1
10
100
1,000
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P01xxxL
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
100
10
Tj initial = 25o C
I TM (A)
Tj initial o 25 C
I TSM
10 1 1
I2 t
Tj max
Tj max Vto =0.95 V Rt =0.600
0.1 1
tp(ms)
VTM (V)
10
0.1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values).
Ih(Rgk) Ih(Rgk=1k
)
Tj=25 o C
5.0
1.0
0.1
Rgk( )
1 .0 E+0 0 1. 0E+01 1.0 E+ 02 1. 0E+ 03 1 .0 E+0 4 1. 0E+05 1. 0E+ 06
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P01xxxL
PACKAGE MECHANICAL DATA SOT23 (Plastic)
B C
REF.
D
DIMENSIONS Millimeters Inches Min. Max.
1.04 1.40
A
Min.
0.036 0.047 0.006
Max.
0.041 0.055
A B C
0.93 1.20 0.15 0.085 0.45 0.08 0.013 1.90 0.95 0.95 2.10 0.45 0.37 2.80
G B
F
E
D E F G
0.115 0.60
0.003 0.018 0.003
0.005 0.024
0.10 2.05 1.05 1.05 2.50 0.60 0.46 3.00
0.0005 0.075 0.037 0.037 0.083 0.018 0.015 0.110
0.004 0.081 0.041 0.041 0.098 0.024 0.018 0.118
J H M I N
H I J K L
L
M N
K
Weight : 0.007 g FOOT PRINT
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P01xxxL
MARKING Type P0102AL P0102BL P0102CL P0102DL P0109AL P0109BL P0109CL P0109DL P0111AL P0111BL P0111CL P0111DL P0115AL P0115BL P0115CL P0115DL Marking P2A P2B P2C P2D P9A P9B P9C P9D P1A P1B P1C P1D P5A P5B P5C P5D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6
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