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BUX87
HIGH VOLTAGE SILICON POWER TRANSISTOR
s s s s
s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY (450V VCEO) MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION HIGH DC CURRENT GAIN
APPLICATIONS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUX87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. SOT-32
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1000 450 5 0.5 1 0.3 0.6 40 -65 to 150 150 Unit V V V A A A A W
o o
C C
June 1997
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BUX87
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEV I EBO V CEO(sus) V BEO V CE(sat ) V BE(s at) hFE fT ts tf Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Base Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Transition F requency RESISTIVE LO AD Storage Time Fall T ime Test Cond ition s V CE = 1000 V V CE = 1000 V V EB = 5 V I C = 100 mA I C = 10 mA I C = 0.1 A I C = 0.2 A I C = 0.2 A I C = 50 mA I C = 40 mA I C = 50 mA V CC = 250 V I B1 = 40 mA t p = 20 s I B = 0.01 A I B = 0.02 A I B = 0.02 A V CE = 5 V V CE = 5 V V CE = 10 V f=1MHz IC = 200 mA IB2 = -80 mA 50 12 20 4.5 0.5 MHz s s 450 5 0.8 1 1 Tj = 125 o C Min. Typ . Max. 100 1 1 Un it A mA mA V V V V V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
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BUX87
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Reverse Biased SOA
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BUX87
SOT-32 (TO-126) MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629
DIM.
H2
0016114
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BUX87
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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