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| VND10N06/VND10N06-1 VNP10N06FI/K10N06FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM s s s s s s s s s Vclamp 60 60 60 60 V V V V R DS(on) 0.3 0.3 0.3 0.3 I lim 10 10 10 10 A A A A 3 3 2 1 LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY 1 DPAK TO-252 IPAK TO-251 DESCRIPTION The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. 3 1 2 ISOWATT220 SOT82-FM BLOCK DIAGRAM (*) () SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2. October 1997 1/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ABSOLUTE MAXIMUM RATING Symbol Parameter DPAK IPAK V DS V in I in ID IR V esd Ptot Tj Tc T stg Drain-source Voltage (V in = 0) Input Voltage Input Current Drain Current Reverse DC Output Current Electrostatic Discharge (C= 100 pF, R=1.5 K) Total Dissipation at T c = 25 o C Operating Junction Temperature Case Operating Temperature Storage Temperature 35 Value ISOWATT220 Internally Clamped Internally Clamped 20 Internally Limited -15 4000 27 Internally Limited Internally Limited -55 to 150 9 SOT82-FM V V mA A A V W o o o Unit C C C THERMAL DATA DPAK/IPAK R thj-case Thermal Resistance Junction-case Max R thj-amb Thermal Resistance Junction-ambient Max 3.5 100 ISOWATT220 4.5 62.5 SOT82-FM 14 100 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V CLAMP V IL VIH V INCL I DSS II SS Parameter Drain-source Clamp Voltage Input Low Level Voltage Input High Level Voltage Input-Source Reverse Clamp Voltage Zero Input Voltage Drain Current (V in = 0) Supply Current from Input Pin Test Conditions I D = 200 mA I D = 100 A V in = 0 VDS = 16 V 3.2 -1 8 V in = V IL V in = V IL V in = 5 V 150 -0.3 11 250 100 300 Min. 50 Typ. 60 Max. 70 1.5 Unit V V V V V A A A R L = 27 V DD = 16 V V DS = 0.5 V I in = -1 mA I in = 1 mA V DS = 50 V V DS < 35 V V DS = 0 V ON () Symbol R DS(on) Parameter Static Drain-source On Resistance V in = 7 V Test Conditions ID = 1 A T J < 125 C o Min. Typ. 0.15 Max. 0.3 Unit 2/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symbol C oss Parameter Output Capacitance Test Conditions V DS = 13 V f = 1 MHz V in = 0 Min. Typ. 350 Max. 500 Unit pF SWITCHING (**) Symbol t d(on) tr t d(off) tf t d(on) tr t d(off) tf (di/dt) on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions V DD = 16 V Id = 1 A V gen = 7 V R gen = 10 (see figure 3) V DD = 16 V Id = 1 A V gen = 7 V R gen = 1000 (see figure 3) V DD = 16 V V in = 7 V V DD = 12 V ID = 1 A R gen = 10 ID = 1 A Vin = 7 V Min. Typ. 1100 550 200 100 1.2 1 1.6 1.2 1.5 13 Max. 1600 900 400 200 1.8 1.5 2.3 1.8 Unit ns ns ns ns s s s s A/s nC SOURCE DRAIN DIODE Symbol V SD () t rr () Q rr () I RRM () Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1 A Test Conditions V in = V IL Min. Typ. 0.8 125 0.22 3.5 Max. 1.6 Unit V ns C A I SD = 1 A di/dt = 100 A/s V DD = 30 V T j = 25 o C (see test circuit, figure 5) PROTECTION Symbol I lim t dlim () T jsh () T jrs () E as () Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Single Pulse Avalanche Energy starting T j = 25 C V DD = 24 V V in = 7 V R gen = 1 K L = 10 mH o Test Conditions V in = 7 V V in = 7 V V DS = 13 V V DS step from 0 to 13 V Min. 6 Typ. 10 12 Max. 15 20 Unit A s o 150 135 250 C C o mJ () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Parameters guaranteed by design/characterization 3/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM PROTECTION FEATURES During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 A) flows into the INPUT pin in order to supply the internal circuitry. During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET. In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. If Tj reaches Tjsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to Tjrs 4/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Thermal Impedance For DPAK / IPAK Thermal Impedance For ISOWATT220 Thermal Impedance For SOT82-FM Derating Curve Output Characteristics Static Drain-Source On Resistance vs Input Voltage 5/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Voltage vs Junction Temperature 8/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 10/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 11/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 P011G 12/14 G VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM SOT82-FM MECHANICAL DATA mm MIN. A A1 b b1 b2 c D e E L L1 2.85 1.47 0.40 1.4 1.3 0.45 10.5 2.2 7.45 15.5 1.95 TYP. MAX. 3.05 1.67 0.60 1.6 1.5 0.6 10.9 2.8 7.75 15.9 2.35 MIN. 1.122 0.578 0.157 0.551 0.511 0.177 4.133 0.866 2.933 6.102 0.767 inch TYP. MAX. 1.200 0.657 0.236 0.630 0.590 0.236 4.291 1.102 3.051 6.260 0.925 DIM. P032R 13/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 14/14 |
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