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(R)
BDY90P
NPN SILICON POWER TRANSISTOR
s
s
LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED
APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS s GENERAL PURPOSE AMPLIFIERS s DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST
s
3 1 2
DESCRIPTION The BDY90P is a silicon Multiepitaxial Planar NPN power transistor mounted in Jedec TO-220 plastic package. It is intented for use in switching, linear applications and emergency lighting.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot T stg Tj
Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c 25 C Storage Temperature Max. Operating Junction Temperature
o
Value 120 120 100 6 10 15 2 60 -65 to 175 150
Unit V V V V A A A W
o o
C C 1/4
September 1999
BDY90P
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 2.08
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CEV I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 120 V V CE = 120 V V CE = 120 V V EB = 6 V I C = 100 mA 100 Min. Typ. Max. 1 1 3 1 Unit mA mA mA mA V
T case = 150 o C
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain
IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 1 A IC = 5 A I C = 10 A I C = 0.5 A f = 5 MHz IC = 5 A V CC = 30 V
I B = 0.5 A IB = 1 A I B = 0.5 A IB = 1 A V CE = 2 V V CE = 5 V V CE = 5 V V CE = 5 V 30 30 20 70
0.5 1.5 1.2 1.5 120
V V V V
ft
Transition-Frequency RESISTIVE LOAD Turn-on Time Storage Time Fall Time
MHz
t on ts tf
I B1 = -IB2 = 0.5 A
0.35 1.3 0.2
s s s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BDY90P
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BDY90P
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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