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| 4AK23 Silicon N Channel Power MOS FET Array Application High speed power switching SP-12TA Features * Low on-resistance RDS(on) 0.25, VGS = 10V, ID = 2.5A * Low drive current * High speed switching * High density mounting * Suitable for H-bridged motor driver 1 1, 5, 8, 12 ; Gate 2, 4, 9, 11 ; Drain 3, 6, 7, 10 ; Source 4 12 2 1 5 9 12 11 8 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Ratings 100 20 5 20 5 Unit V V A A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Pch(Tc = 25 C)** 32 Pch** Tch Tstg 4 150 -55 to +150 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 4 Devices operation 4AK23 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.2 10 250 2.0 0.25 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 2.5A VGS = 10 V * ID = 2.5 A VGS = 4 V * ID = 2.5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS = 10 V RL = 12 ------------------------------------------------ -- 0.25 0.35 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3 5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristeic Curves of 2SK1300 -- -- -- -- -- -- -- -- 525 205 60 5 30 180 65 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, dIF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 170 -- s -------------------------------------------------------------------------------------- 4AK23 Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 48 Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 4 32 2 16 0 50 100 150 0 50 100 150 Ambient Temperature Tc (C) Case Temperature Tc (C) Maximum Safe Operation Area 50 20 Drain Current I D (A) 10 5 2 1 0.5 0.2 0.1 Ta = 25C n n) tio is (o ra rea DS pe a O his by R t in ited m li 10 s 10 0 s PW = 10 1 m s DC O pe ra n tio m s (1 o Sh t) c (T = 25 C ) 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) |
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