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| 4AM14 Silicon N Channel/P Channel Complementary Power MOS FET Array Application High speed power switching SP-12TA Features * Low on-resistance N-channel: RDS (on) 0.17 , VGS = 10 V ID = 4 A P-channel: RDS (on) 0.2 , VGS = -10 V ID = -4 A * Capable of 4 V gate drive * Low drive current * Hight speed switching * High density mounting * Suitable for H-bridged motor driver * Discrete packaged devices of same die N-channel: 2SK970 (TO-220AB), 2SK1093 (TO-220FM) P-channel: 2SJ172 (TO-220AB), 2SJ175 (TO-220FM) Table 1 Absolute Maximum Ratings (Ta = 25C) Ratings --------------------- Nch Pch Unit 60 20 8 32 8 32 4 150 -55 to +150 -60 20 -8 -32 -8 V V A A A W W C C 1 Nch 2 4 12 5 1 Pch 8 3 9 6 11 1, 5, 8, 12 ; Gate 2, 4, 9, 11 ; Drain 3, 6, 7, 10 ; Source 12 7 10 Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % 4 devices operation Symbol VDSS VGSS ID ID(pulse)* IDR Pch (Tc =25C)** Pch** Tch Tstg -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 4AM14 Table 2 Electrical Characteristics (Ta = 25C) (1 Unit) N channel P channel ---------------------------------- Min Typ Max Min Typ Max -- -- -60 -- -- Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Symbol Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- V(BR)DSS 60 V(BR)GSS 20 IGSS IDSS VGS(off) RDS(on) -- -------------------------------------------------------------------------------------- -- -- 20 -- -- V -------------------------------------------------------------------------------------- -- 10 -- -- 10 A -------------------------------------------------------------------------------------- -- -- 250 -- -- -250 A -------------------------------------------------------------------------------------- 1.0 -- 2.0 -1.0 -- -2.0 V -------------------------------------------------------------------------------------- -- 0.13 0.17 -- 0.15 0.2 ID = 4 A, VGS = 10 V * ------------------------------------------------------------------ -- 0.18 0.24 0.20 0.27 ID = 4 A, VGS = 4 V * 3.5 5.5 -- 3.5 6.0 -- S ID = 4 A *VDS = 10 V * VDS = 10 V, VGS = 0, -------------------------------------------------------------------------------------- |yfs| -------------------------------------------------------------------------------------- Ciss Coss Crss -- -- -- 400 220 60 -- -- -- -- -- -- 900 460 130 -- -- -- pF pF pF ---------------------------------------------------------------- f = 1 MHz ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- RL = 7.5 tr td(off) tf VDF -- -- -- -- 45 150 85 1.2 -- -- -- -- -- -- -- -- 50 180 95 -1.2 -- -- -- -- ns ns ns V IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, dIF/dt = 50 A/s td(on) -- 5 -- -- 8 -- ns ID = 4 A, VGS = 10 V, ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Body-drain diode trr reverse recovery time -- 120 -- -- 185 -- ns -------------------------------------------------------------------------------------- * Pulse Test Note: Polarity of test conditions for P channel device is reversed. s Nch : See characteristeic curves of 2SK970 s Pch : See characteristeic curves of 2SJ172 4AM14 Maximum Channel Dissipation Curve 6 Condition : Channel dissipation of each die is identical 5 Channel Dissipation Pch (W) 4 Device Operation 3 Device Operation 4 2 Device Operation 1 Device Operation 3 Channel Dissipation Pch (W) 48 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is identical 4 Device Operation 3 Device Operation 32 2 Device Operation 1 Device Operation 2 16 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (C) Case Temperature Ta (C) Maximum Safe Operation Area (N-channel) 50 30 10 Maximum Safe Operation Area (P-channel) - 50 - 30 10 s 10 0 1 s 10 - 10 Drain Current I D (A) PW 0 10 PW Drain Current I D (A) m s 1 = 10 m s m (1 s s s sh = 10 3 1 D D -3 -1 C C O O m s (1 pe pe ra ra tio tio ot ) sh ot ) n n (T (T c c 0.3 Operation in this area is limited by RDS (on) Ta = 25C = = 25 C ) - 0.3 Operation in this area is limited by RDS (on) Ta = 25C 25 C ) 0.1 0.05 0.1 - 0.1 - 0.05 - 0.1 - 0.3 -1 -3 - 10 - 30 - 100 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) |
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