 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s SGS-THOMSON PREFERRED SALESTYPE ORDER CODES : BULD128DA-1 AND BULD128DB-1 NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE IPAK (TO-251) 3 2 1 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 35 -65 to 150 150 Uni t V V V A A A A W o o C C February 1998 1/7 BULD128D-1 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.57 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V EBO V CEO(sus) V CE(sat ) Parameter Collector Cut-off Current (V BE = -1.5 V) Collector Cut-off Current (IB = 0) Emitter-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Test Cond ition s V CE = 700 V V CE = 700 V V CE = 400 V I E = 10 mA I C = 100 mA IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A L = 25 mH IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A 9 400 0.7 1.0 1.5 0.5 1.1 1.2 1.3 10 8 40 2.5 IC = 2 A V BE(off ) = -5 V L = 200 H IC = 2 A IB2 = -0.4 A 1.7 2 0.2 2.5 2.9 0.6 0.1 V s s Tj = 125 o C Min. Typ . Max. 100 500 250 Un it A A A V V V V V V V V V V BE(s at) Base-Emitter Saturation Voltage DC Current G ain Forward Voltage Drop INDUCTIVE LOAD Storage Time F all Time RESISTIVE LO AD Storage Time BULD128DA-1 BULD128DB-1 Fall T ime I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 mA IC = 2 A If = 2 A V CC = 200 V I B1 = 0.4 A R BB = 0 (see fig.1) V CC = 250 V I B1 = 0.4 A T p = 30 s (see fig.2) IB = 0.1 A IB = 0.2 A IB = 0.5 A V CE = 5 V VCE = 5 V h FE Vf ts tf ts tf s s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Note : Ordering Codes: BULD128DA-1 BULD128DB-1 Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details. 2/7 BULD128D-1 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULD128D-1 Inductive Fall Time Inductive Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULD128D-1 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULD128D-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 6/7 BULD128D-1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7 |
Price & Availability of 5248
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |