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| STW38NB20 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE STW38NB20 s s s s s s s V DSS 200 V R DS(on) < 0.065 ID 38 A TYPICAL RDS(on) = 0.052 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt(1) T stg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 200 200 30 38 24 152 180 1.44 5.5 -65 to 150 150 (1) ISD 38 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (*) Pulse width limited by safe operating area January 1998 STW38NB20 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.69 30 0.1 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 38 550 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 200 1 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 125 I GSS ON () Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10 V Test Conditions ID = 250 A I D = 19 A 38 Min. 3 Typ. 4 0.052 Max. 5 0.065 Unit V A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 19 A V GS = 0 Min. 10 Typ. 19 2800 750 100 3800 1000 140 Max. Unit S pF pF pF 2/5 STW38NB20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 100 V I D = 19 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 160 V ID = 38 A V GS = 10 V Min. Typ. 35 40 70 22 35 Max. 47 55 95 Unit ns ns nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 160 V R G = 4.7 I D = 38 A V GS = 10 V Min. Typ. 18 22 42 Max. 24 30 57 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 38 A I SD = 38 A V DD = 50 V VGS = 0 di/dt = 100 A/s o T j = 150 C 350 2.3 13 Test Conditions Min. Typ. Max. 38 152 1.5 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STW38NB20 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/5 STW38NB20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5 |
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