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Datasheet File OCR Text: |
(R) NTSP1 NETWORK TERMINATION S INTERFACE PROTECTION Application Specific Discretes A.S.D.TM MAIN APPLICATIONS ISDN equipment where transient overvoltage and electrostaticdischargeprotection is required, suchas: S interface on NT equipment S interface of terminal equipment DESCRIPTION The NTSP1 is a monolithic diode structure especially designed to protect ISDN S/T interfaces against transient overvoltage and ESD surges. SO8 FEATURES Peak pulse current : IPP = 10 A max (5 / 310 s) Clamping voltage : VCL = 3 V max Low leakage current : IR = 1 A Capacitance : C = 40 pF typ. FUNCTIONAL DIAGRAM BENEFITS Monolithic diode structure for high reliability Transient overvoltage and ESD surges protection Board space saving Line A 1 Line A NC NC NC Line B NC Line B COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K21 1 kV, 10/700 s (with serialresistance of 100 ) see testcircuit 1 kV, 1.2/50 s (with serial resistance of 50 ) 2 kV, 1.2/50 s (with serial resistance of 100 ) 15 kV (air discharge) 8 kV (contact discharge) CCITT K22 IEC 1000-4-5 IEC 1000-4-2 February 1998 - Ed: 2 1/4 NTSP1 APPLICATION EXAMPLE : typical connection diagram NTSP1 Network termination NT1 SMTPA62 SMTPA62 Terminal equipment TE ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol IPP Tstg TL Parameter Peak pulse current Test condition 1 kV 10/700 s (see test circuit) 2 kV 1.2/50 s (see test circuit) Value 10 20 -40 to +150 260 Unit A C C Storage temperature range Lead temperature for soldering during 10 s ELECTRICAL CHARACTERISTICS (Tamb = 25 C) Type VCL Parameter Clamping voltage Test condition 1 mA, measured at 50 Hz at IPP, 10/700 s at IPP, 1.2/50 s VR = 1.2 V, 25 C VR = 1.2 V, 70 C VR = 1.2 V, F = 1 MHz 40 Typ. Max. 3 15 25 1 5 Unit V A A pF IR C Leakage current Capacitance 2/4 (R) NTSP1 TEST CIRCUIT (Transversal mode) surge generator 4 * 100 4 * 230 V Gas-tubes 230 V equipment under test So AC/DC So ORDER CODE NTSP 1 RL Product name PACKAGING : RL = tape and reel (2500 pcs) = tube (100 pcs) package SO8 3/4 (R) NTSP1 PACKAGE MECHANICAL DATA SO8 (Plastic) DIMENSIONS REF. Millimetres Inches Min. Typ. Max. Min. Typ. Max. A a1 a2 b b1 C c1 D E e e3 F L M S Weight : 0.08g 3.8 0.4 4.8 5.8 1.27 3.81 4.0 0.15 0.35 0.19 0.50 45 (typ) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244 0.1 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.020 0.069 0.010 0.065 0.019 0.010 1.27 0.016 0.6 8 (max) MARKING Type NTSP1 Marking NTSP1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 (R) |
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