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HB56UW3273 Series
33554432-word x 72-bit High Density Dynamic RAM Module
ADE-203-653 (Z) Preliminary Rev. 0.0 Sep. 6, 1996 Description
The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56UW3273E Series is a 32 M x 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM (HM5165405ATT) sealed in TSOP package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244) sealed in TSSOP package. The HB56UW3273EJ Series is a 32 M x 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM (HM5165405AJ) sealed in SOJ package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244) sealed in TSSOP package. The HB56UW3273 Series offers Extended Data Out (EDO) Page Mode as a high AiiAiispeed access mode. An outline of the HB56UW3273 Series is 168-pin socket type package (dual lead out). Therefore, the HB56UW3273 Series makes high density mounting possible without surface mount technology. The HB56UW3273 Series provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP or SOJ on the its module board.
Features
* 168-pin socket type package (Dual lead out) Outline : 133.35 mm (Length) x 60.96 mm (Height) x 4.00 mm (Thickness) (HB56UW3273E Series) Outline : 176.53 (133.35) mm (Length) x 41.91 mm (Height) x 9.00 mm (Thickness) (HB56UW3273EJ Series) Lead pitch : 1.27 mm * Single 3.3 V supply (0.3 V) * High speed Access time: tRAC = 60 ns/70 ns (max) Access time: tCAC = 20 ns/23 ns (max) * Low power dissipation Active mode: 12.02 W/10.73 W (max) Standby mode (TTL): 295.2 mW (max) * JEDEC standard outline buffered 8-byte DIMM Preliminary: This document contains information on a new product. Specifications and information contained herein are subject to change without notice.
HB56UW3273 Series
* * * * * Buffered input except RAS and DQ 4-byte interleave enabled, dual address input (A0/B0) EDO page mode capability 4096 refresh cycles: 64 ms 2 variations of refresh RAS-only refresh CAS-before-RAS refresh * TTL compatible
Ordering Information
Type No. HB56UW3273E-6A HB56UW3273E-7A HB56UW3273EJ-6A HB56UW3273EJ-7A Access time 60 ns 70 ns 60 ns 70 ns Package 168-pin dual lead out socket type Contact pad Gold
Pin Arrangement
1 pin 10 pin 11 pin
40 pin 41 pin
84 pin
85 pin 94 pin 95 pin 124 pin 125 pin
168 pin
Pin No. 1 2 3 4 5 6 7 8 9 10
Signal name Pin No. VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 43 44 45 46 47 48 49 50 51 52
Signal name Pin No. VSS OE2 RE2 CE4 NC WE2 VCC NC NC DQ18 85 86 87 88 89 90 91 92 93 94
Signal name Pin No. VSS DQ36 DQ37 DQ38 DQ39 VCC DQ40 DQ41 DQ42 DQ43 127 128 129 130 131 132 133 134 135 136
Signal name VSS NC RE3 CE5 NC PDE VCC NC NC DQ54
2
HB56UW3273 Series
Pin Arrangement (cont)
Pin No. 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Signal name Pin No. DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS NC NC VCC WE0 CE0 NC RE0 OE0 VSS A0 A2 A4 A6 A8 A10 NC VCC NC NC 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Signal name Pin No. DQ19 VSS DQ20 DQ21 DQ22 DQ23 VCC DQ24 NC NC NC NC DQ25 DQ26 DQ27 VSS DQ28 DQ29 DQ30 DQ31 VCC DQ32 DQ33 DQ34 DQ35 VSS PD1 PD3 PD5 PD7 ID0 (VSS) VCC 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Signal name Pin No. DQ44 VSS DQ45 DQ46 DQ47 DQ48 DQ49 VCC DQ50 DQ51 DQ52 DQ53 VSS NC NC VCC NC CE1 NC RE1 NC VSS A1 A3 A5 A7 A9 A11 NC VCC NC B0 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Signal name DQ55 VSS DQ56 DQ57 DQ58 DQ59 VCC DQ60 NC NC NC NC DQ61 DQ62 DQ63 VSS DQ64 DQ65 DQ66 DQ67 VCC DQ68 DQ69 DQ70 DQ71 VSS PD2 PD4 PD6 PD8 ID1 (VSS) VCC
3
HB56UW3273 Series
Pin Description
Pin name A0 to A11, B0 Function Address input Row address (D0 to D35) Column address (D0 to D35) Refresh address (D0 to D35) DQ0 to DQ71 RE0 to RE3 CE0, CE1, CE4, CE5 WE0, WE2 OE0, OE2 PD1 to PD8 ID0 , ID1 PDE VCC VSS NC Data input/output Row address strobe (RAS) Column address strobe (CAS) Read/Write enable Output enable Presence detect ID bit Presence detect enable Power supply Ground No connection A0 to A11, B0 A0 to A11, B0 A0 to A11, B0
4
HB56UW3273 Series
Presence Detect Pin Assignment (Controlled by PDE pin) (HB56UW3273E Series)
PDE = Low Pin name PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8 Pin No. 79 163 80 164 81 165 82 166 60 ns 1 0 0 0 1 1 1 0 70ns 1 0 0 0 1 0 1 0 PDE = High All High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z
Note: 1: High level (driver output). 0: Low level (driver output)
Presence Detect Pin Assignment (Controlled by PDE pin) (HB56UW3273EJ Series)
PDE = Low Pin name PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8 Pin No. 79 163 80 164 81 165 82 166 60 ns NC VSS VSS VSS NC NC NC VSS 70ns NC VSS VSS VSS NC VSS NC VSS PDE = High All High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z
5
HB56UW3273 Series
Block Diagram (HB56UW3273E Series)
CE1 RE3 RE2 CE4 WE2 OE2 CAS RAS WE OE I/O DQ36 I/O DQ37 D18 I/O DQ38 I/O DQ39 CAS RAS WE OE I/O DQ40 I/O DQ41 D19 I/O DQ42 I/O DQ43 CAS RAS WE OE I/O DQ44 I/O DQ45 D20 I/O DQ46 I/O DQ47 CAS RAS WE OE I/O DQ48 I/O DQ49 D21 I/O DQ50 I/O DQ51 CAS RAS WE OE I/O DQ52 I/O DQ53 D22 I/O DQ54 I/O DQ55 CAS RAS WE OE I/O DQ56 I/O DQ57 D23 I/O DQ58 I/O DQ59 CAS RAS WE OE I/O DQ60 I/O DQ61 D24 I/O DQ62 I/O DQ63 CAS RAS WE OE I/O DQ64 I/O DQ65 D25 I/O DQ66 I/O DQ67 CAS RAS WE OE I/O DQ68 I/O DQ69 D26 I/O DQ70 I/O DQ71 CE5
RE1 RE0 CE0 WE0 OE0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ35
CAS RAS WE OE I/O I/O D0 I/O I/O CAS RAS WE OE I/O I/O D1 I/O I/O CAS RAS WE OE I/O I/O D2 I/O I/O CAS RAS WE OE I/O I/O D3 I/O I/O CAS RAS WE OE I/O I/O D4 I/O I/O CAS RAS WE OE I/O I/O D5 I/O I/O CAS RAS WE OE I/O I/O D6 I/O I/O CAS RAS WE OE I/O I/O D7 I/O I/O CAS RAS WE OE I/O I/O D8 I/O I/O
CAS RAS WE OE I/O I/O D9 I/O I/O CAS RAS WE OE I/O I/O D10 I/O I/O CAS RAS WE OE I/O I/O D11 I/O I/O CAS RAS WE OE I/O I/O D12 I/O I/O CAS RAS WE OE I/O I/O D13 I/O I/O CAS RAS WE OE I/O I/O D14 I/O I/O CAS RAS WE OE I/O I/O D15 I/O I/O CAS RAS WE OE I/O I/O D16 I/O I/O CAS RAS WE OE I/O I/O D17 I/O I/O PD1 to PD8
CAS RAS WE OE I/O I/O D27 I/O I/O CAS RAS WE OE I/O I/O D28 I/O I/O CAS RAS WE OE I/O I/O D29 I/O I/O CAS RAS WE OE I/O I/O D30 I/O I/O CAS RAS WE OE I/O I/O D31 I/O I/O CAS RAS WE OE I/O I/O D32 I/O I/O CAS RAS WE OE I/O I/O D33 I/O I/O CAS RAS WE OE I/O I/O D34 I/O I/O CAS RAS WE OE I/O I/O D35 I/O I/O
A0 B0 A1 to A11 VCC VSS 0.22F x 44pcs
D0 to D8 , D18 to D26 D9 to D17 , D27 to D35 D0 to D35 D0 to D35, 74LVT16244 D0 to D35, 74LVT16244
VCC VSS VSS VSS VCC VSS VCC VSS VCC VSS VSS ID pin VSS VSS 0
0 PD1 PD2 PD3 0 0 0 PD4 PD5 PD6 PD7 PD8 ID0 ID1
* D0 to D35 : HM5165405 : 74LVT16244
6
HB56UW3273 Series
Block Diagram (HB56UW3273EJ Series)
CE1 RE3 RE2 CE4 WE2 OE2 CAS RAS WE OE I/O DQ36 I/O DQ37 D18 I/O DQ38 I/O DQ39 CAS RAS WE OE I/O DQ40 I/O DQ41 D19 I/O DQ42 I/O DQ43 CAS RAS WE OE I/O DQ44 I/O DQ45 D20 I/O DQ46 I/O DQ47 CAS RAS WE OE I/O DQ48 I/O DQ49 D21 I/O DQ50 I/O DQ51 CAS RAS WE OE I/O DQ52 I/O DQ53 D22 I/O DQ54 I/O DQ55 CAS RAS WE OE I/O DQ56 I/O DQ57 D23 I/O DQ58 I/O DQ59 CAS RAS WE OE I/O DQ60 I/O DQ61 D24 I/O DQ62 I/O DQ63 CAS RAS WE OE I/O DQ64 I/O DQ65 D25 I/O DQ66 I/O DQ67 CAS RAS WE OE I/O DQ68 I/O DQ69 D26 I/O DQ70 I/O DQ71 CE5
RE1 RE0 CE0 WE0 OE0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ35
CAS RAS WE OE I/O I/O D0 I/O I/O CAS RAS WE OE I/O I/O D1 I/O I/O CAS RAS WE OE I/O I/O D2 I/O I/O CAS RAS WE OE I/O I/O D3 I/O I/O CAS RAS WE OE I/O I/O D4 I/O I/O CAS RAS WE OE I/O I/O D5 I/O I/O CAS RAS WE OE I/O I/O D6 I/O I/O CAS RAS WE OE I/O I/O D7 I/O I/O CAS RAS WE OE I/O I/O D8 I/O I/O
CAS RAS WE OE I/O I/O D9 I/O I/O CAS RAS WE OE I/O I/O D10 I/O I/O CAS RAS WE OE I/O I/O D11 I/O I/O CAS RAS WE OE I/O I/O D12 I/O I/O CAS RAS WE OE I/O I/O D13 I/O I/O CAS RAS WE OE I/O I/O D14 I/O I/O CAS RAS WE OE I/O I/O D15 I/O I/O CAS RAS WE OE I/O I/O D16 I/O I/O CAS RAS WE OE I/O I/O D17 I/O I/O PD1 to PD8
CAS RAS WE OE I/O I/O D27 I/O I/O CAS RAS WE OE I/O I/O D28 I/O I/O CAS RAS WE OE I/O I/O D29 I/O I/O CAS RAS WE OE I/O I/O D30 I/O I/O CAS RAS WE OE I/O I/O D31 I/O I/O CAS RAS WE OE I/O I/O D32 I/O I/O CAS RAS WE OE I/O I/O D33 I/O I/O CAS RAS WE OE I/O I/O D34 I/O I/O CAS RAS WE OE I/O I/O D35 I/O I/O
A0 B0 A1 to A11 VCC VSS 0.22F x 38pcs
D0 to D8 , D18 to D26 D9 to D17 , D27 to D35 D0 to D35 D0 to D35, 74LVT16244 D0 to D35, 74LVT16244
NC VSS VSS VSS VSS VSS NC VSS ID pin V SS VSS ID0 ID1
PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8
* D0 to D35 : HM5165405 : 74LVT16244
0
7
HB56UW3273 Series
Absolute Maximum Ratings
Parameter Voltage on any pin relative to V SS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature Symbol VT VCC Iout PT Topr Tstg Value -0.5 to +4.6 -0.5 to +4.6 50 19 0 to +70 -55 to +125 Unit V V mA W C C
Recommended DC Operating Conditions (Ta = 0 to +70C)
Parameter Supply voltage Input high voltage Input low voltage Note: Symbol VCC VIH VIL Min 3.0 2.0 -0.3 Typ 3.3 -- -- Max 3.6 VCC + 0.3 0.8 Unit V V V Notes 1, 2 1 1
1. All voltage referred to VSS . 2. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level.
8
HB56UW3273 Series
DC Characteristics (Ta = 0 to +70C, VCC = 3.3 V 0.3 V, VSS = 0 V)
HB56UW3273 60 ns Parameter Operating current* , *
1 2
70 ns Max 3340 82 Min -- -- Max 2980 82 Unit Test conditions mA mA t RC = min TTL interface RAS, CAS = VIH Dout = High-Z CMOS interface RAS, CAS VCC - 0.2 V Dout = High-Z t RC = min RAS = VIH, CAS = VIL Dout = enable t RC = min t HPC = min 0 V Vin 4.6 V 0 V Vin 4.6 V Dout = disable High Iout = -2 mA Low Iout = 2 mA
Symbol Min I CC1 I CC2 -- --
Standby current
--
46
--
46
mA
RAS-only refresh current*2 Standby current*
1
I CC3 I CC5 I CC6 I CC7 I LI I LO VOH VOL
-- -- -- -- -10 -10 2.4 0
3340 190 2800 2620 10 10 VCC 0.4
-- -- -- -- -10 -10 2.4 0
2980 190 2440 2260 10 10 VCC 0.4
mA mA mA mA A A V V
CAS-before-RAS refresh current EDO page mode current*1, * 3 Input leakage current Output leakage current Output high voltage Output low voltage
Notes : 1. I CC depends on output load condition when the device is selected. ICC max is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less within one page mode cycle tHPC .
Capacitance (Ta = 25C, VCC = 3.3 V 0.3 V)
Parameter Input capacitance (Address) Input capacitance (CAS, WE, OE) Input capacitance (RAS) I/O capacitance (DQ) Symbol CI1 CI2 CI3 CI/O Typ -- -- -- -- Max 20 20 78 30 Unit pF pF pF pF Notes 1 1 1 1, 2
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. CAS = VIH to disable Dout.
9
HB56UW3273 Series
AC Characteristics (Ta = 0 to +70C, VCC = 3.3 V 0.3 V, VSS = 0 V) *1, *2, *3,*18
Test Conditions * * * * * Input rise and fall time: 2 ns Input levels: VIL = 0 V, V IH = 3 V Input timing reference levels: 0.8 V, 2.0 V Output timing reference levels: 0.8 V, 2.0 V Output load: 1 TTL gate + C L (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HB56UW3273 60 ns Parameter Random read or write cycle time RAS precharge time CAS precharge time RAS pulse width CAS pulse width Row address setup time Row address hold time Column address setup time Column address hold time RAS to CAS delay time RAS to column address delay time RAS hold time CAS hold time CAS to RAS precharge time OE to Din delay time OE delay time from Din CAS delay time from Din Transition time (rise and fall) Symbol Min t RC t RP t CP t RAS t CAS t ASR t RAH t ASC t CAH t RCD t RAD t RSH t CSH t CRP t OED t DZO t DZC tT 104 40 10 60 10 5 10 0 10 20 15 20 48 10 20 0 0 2 Max -- -- -- 10000 10000 -- -- -- -- 40 25 -- -- -- -- -- -- 50 70 ns Min 124 50 13 70 13 5 10 0 13 20 15 23 58 10 23 0 0 2 Max -- -- -- 10000 10000 -- -- -- -- 47 30 -- -- -- -- -- -- 50 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5 6 6 7 21 3 4 Notes
10
HB56UW3273 Series
Read Cycle
HB56UW3273 60 ns Parameter Access time from RAS Access time from CAS Access time from address Access time from OE Read command setup time Read command hold time to CAS Read command hold time from RAS Read command hold time to RAS Column address to RAS lead time Column address to CAS lead time CAS to output in low-Z Output data hold time Output data hold time from OE Output buffer turn-off time Output buffer turn-off to OE CAS to Din delay time Output data hold time from RAS Output buffer turn-off to RAS Output buffer turn-off to WE WE to Din delay time RAS to Din delay time Symbol Min t RAC t CAC t AA t OEA t RCS t RCH t RCHR t RRH t RAL t CAL t CLZ t OH t OHO t OFF t OEZ t CDD t OHR t OFR t WEZ t WED t RDD -- -- -- -- 0 0 60 0 35 18 2 3 3 -- -- 20 3 -- -- 20 15 Max 60 20 35 20 -- -- -- -- -- -- -- -- -- 20 20 -- -- 15 20 -- -- 70 ns Min -- -- -- -- 0 0 70 0 40 23 2 3 3 -- -- 23 3 -- -- 23 18 Max 70 23 40 23 -- -- -- -- -- -- -- -- -- 20 20 -- -- 15 20 -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 20 13, 20 13 5 12 12 Notes 8, 9 9, 10, 16 9, 11, 16 9
11
HB56UW3273 Series
Write Cycle
HB56UW3273 60 ns Parameter Write command setup time Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in setup time Data-in hold time Symbol Min t WCS t WCH t WP t RWL t CWL t DS t DH 0 10 10 15 10 0 15 Max -- -- -- -- -- -- -- 70 ns Min 0 13 10 18 13 0 18 Max -- -- -- -- -- -- -- Unit ns ns ns ns ns ns ns Notes 14
Read-Modify-Write Cycle
HB56UW3273 60 ns Parameter Read-modify-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time OE hold time from WE Symbol Min t RWC t RWD t CWD t AWD t OEH 154 83 33 48 15 Max -- -- -- -- -- 70 ns Min 180 96 39 56 18 Max -- -- -- -- -- Unit ns ns ns ns ns 14 14 14 Notes
Refresh Cycle
HB56UW3273 60 ns Parameter CAS setup time (CBR refresh cycle) CAS hold time (CBR refresh cycle) WE setup time (CBR refresh cycle) WE hold time (CBR refresh cycle) RAS precharge to CAS hold time Symbol Min t CSR t CHR t WRP t WRH t RPC 10 10 5 10 0 Max -- -- -- -- -- 70 ns Min 10 10 5 10 0 Max -- -- -- -- -- Unit ns ns ns ns ns Notes
12
HB56UW3273 Series
EDO Page Mode Cycle
HB56UW3273 60 ns Parameter EDO page mode cycle time EDO page mode RAS pulse width Access time from CAS precharge RAS hold time from CAS precharge Output data hold time from CAS low CAS hold time referred OE CAS to OE setup time Read command hold time from CAS precharge Symbol Min t HPC t RASP t CPA t CPRH t DOH t COL t COP t RCHC 25 -- -- 40 3 10 10 35 10 10 Max -- 70 ns Min 30 Max -- Unit ns Notes 19 15 9, 16
100000 -- 40 -- -- -- -- -- -- -- -- 45 3 13 10 40 10 10
100000 ns 45 -- -- -- -- -- -- -- ns ns ns ns ns ns ns ns
9, 16
Write pulse width during CAS precharge t WPE OE precharge time t OEP
EDO Page Mode Read-Modify-Write Cycle
HB56UW3273 60 ns Parameter EDO page mode read- modify-write cycle time WE delay time from CAS precharge Symbol Min t HPRWC t CPW 68 54 Max -- -- 70 ns Min 79 62 Max -- -- Unit ns ns 14 Notes
Refresh
Parameter Refresh period Symbol t REF Max 64 Unit ms Notes 4096 cycles
13
HB56UW3273 Series
Notes: 1. AC measurements assume t T = 2 ns. 2. An initial pause of 200 s is required after power up followed by a minimum of eight initialization cycles (any combination of cycles containing RAS-only refresh or CAS-before-RAS refresh). 3. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a reference point only; if t RCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC . 4. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a reference point only; if t RAD is greater than the specified tRAD (max) limit, then access time is controlled exclusively by tAA . 5. Either t OED or tCDD must be satisfied. 6. Either t DZO or tDZC must be satisfied. 7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition times are measured between V IH (min) and VIL (max). 8. Assumes that t RCD tRCD (max) and tRAD tRAD (max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, t RAC exceeds the value shown. 9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF. 10. Assumes that t RCD tRCD (max) and tRCD + tCAC (max) tRAD + tAA (max). 11. Assumes that t RAD tRAD (max) and tRCD + tCAC (max) tRAD + tAA (max). 12. Either t RCH or tRRH must be satisfied for a read cycles. 13. t OFF (max), tOEZ (max), tWEZ (max) and tOFR (max) define the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. 14. t WCS , t RWD, t CWD, t AWD and t CPW are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only; if t WCS tWCS (min), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if tRWD tRWD (min), tCWD tCWD (min), and tAWD tAWD (min), or tCWD tCWD (min), tAWD tAWD (min) and tCPW t CPW (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. 15. t RASP defines RAS pulse width in EDO page mode cycles. 16. Access time is determined by the longest among t AA , t CAC and t CPA. 17. All the V CC and VSS pins shall be supplied with the same voltages. 18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. 19. t HPC (min) can be achieved during a series of EDO page mode write cycles or EDO page mode read cycles. If both write and read operation are mixed in a EDO page mode RAS cycle (EDO page mode mix cycle (1), (2)), minimum value of CAS cycle (tCAS + tCP + 2 tT) becomes greater than the specified t HPC (min) value. The value of CAS cycle time of mixed EDO page mode is shown in EDO page mode mix cycle (1) and (2). 20. Output is disable after both RAS and CAS go to high. 21. t CSH (min) can be achieved when tRCD tCSH (min) - tCAS (min). 22. XXX: H or L (H: V IH (min) VIN VIH (max), L: VIL (min) VIN VIL (max)) ///////: Invalid Dout When the address, clock and input pins are not described on timing waveforms, their pins must be applied VIH or VIL.
14
HB56UW3273 Series
Timing Waveforms*22
Read Cycle
t RC t RAS t RP
RAS t CSH t RCD tT t RSH t CAS t CRP
CAS
t RAD t ASR t ASC t RAL t CAL t CAH
t RAH
Address
Row
Column t RRH t RCHR t RCS t RCH
WE t WED t DZC t CDD t RDD Din High-Z
t DZO
t OEA
t OED
OE t OEZ t OHO t OFF t OH t OFR t OHR t WEZ Dout Dout
t CAC t AA t RAC t CLZ
15
HB56UW3273 Series
Early Write Cycle
t RC t RAS t RP
RAS t CSH t RCD tT CAS t RSH t CAS t CRP
t ASR
t RAH
t ASC
t CAH
Address
Row
Column
t WCS
t WCH
WE
t DS
t DH
Din
Din
Dout
High-Z*
* t WCS
t WCS (min)
16
HB56UW3273 Series
Delayed Write Cycle*18
t RC t RAS
t RP
RAS t CSH t RCD tT CAS t ASR t RAH t ASC t CAH t RSH t CAS t CRP
Address
Row
Column t CWL t RCS t RWL t WP
WE
t DZC
t DS
t DH
Din
High-Z
Din t OEH t OED t OEP
t DZO

OE t OEZ t CLZ Dout High-Z Invalid Dout
17
HB56UW3273 Series
Read-Modify-Write Cycle*18
t RWC t RAS
t RP
RAS tT t RCD t CAS t CRP
CAS t RAD t ASR t RAH t ASC t CAH
Address
Row t RCS
Column t CWD t AWD t RWD tCWL t RWL t WP
WE t DZC t DS Din
High-Z Din
t DH
t DZO
t OED t OEA
t OEH t OEP
OE t CAC t AA t RAC t OEZ t OHO
High-Z
Dout t CLZ
Dout
18
HB56UW3273 Series
RAS-Only Refresh Cycle
t RC t RAS RAS tT t CRP CAS t RPC t CRP t RP
t ASR Address t OFR t OFF Dout Row
t RAH
High-Z
19
HB56UW3273 Series
CAS-Before-RAS Refresh Cycle
t RC t RP RAS t RPC CAS t CSR tT t CHR t RPC t CRP t RAS t RP
,
t CP t WRP t WRH t CP WE Address t OFR t OFF Dout High-Z 20
HB56UW3273 Series
EDO Page Mode Read Cycle (1)
t RP
RAS
t RASP tT t CSH t CAS t RCS t RCHR t RCH t RCS t CP t HPC t CAS t CP t HPC tCAS t RCHC
t HPC t CPRH t CP t t CRP
RSH
CAS
tCAS t RRH t RCH
WE
tASR
Address
tRAH tASC Row
tCAH
t WPE t ASC t CAH Column 2 t CAL
t ASC t CAH Column 3 t CAL
tASC
t RAL t CAH
Column 4
t WED
Column 1 t CAL tDZC
t CAL tRDD tCDD
Din
High-Z tDZO tCOL t OEP tOEP tCOP tOED

OE
tOEA
tCPA
tCPA
tCAC tAA
tAA tCAC
tOEZ
tWEZ
tOHO
tCPA tAA tCAC
tAA
tOEZ
tOFR tOHR tOEZ
tCAC
tRAC
tOEA
tDOH
tOHO
tOEA
tOHO tOFF tOH
Dout
Dout 1
Dout 2
Dout 2
Dout 3
Dout 4
21
HB56UW3273 Series
EDO Page Mode Read Cycle (2)
t RP RAS tT CAS t RCS
WE
t RASP t HPC t CAS tHPC t CP t CAS t RCHC t CP t HPC tRSH tCAS t RRH t RCH t CRP
t CSH t CAS
t CP
tASR
Address
tRAH tASC Row
tCAH
t ASC t CAH Column 2 t CAL
t ASC t CAH Column 3 t CAL
tASC
t RAL t CAH
Column 4
t WED
Column 1 t CAL
tDZC
t CAL
tRDD tCDD
Din
High-Z tDZO tCOL t OEP tOEP tCOP tOED

OE
tOEA
tCPA
tCAC tAA
tAA tCAC
tOEZ
tOHO
tCPA tAA tCAC
tCPA
tAA
tOEZ
tOFR tOHR tOEZ
tRAC
tDOH
tOEA
tCAC
tDOH
tOHO
tOEA
tOHO tOFF tOH
Dout
Dout 1
Dout 2
Dout 2
Dout 3
Dout 4
22
HB56UW3273 Series
EDO Page Mode Early Write Cycle
t RASP
t RP
RAS tT t CSH t RCD t CAS CAS t CP t HPC t CAS t CP t RSH t CAS t CRP
t ASR t RAH
t ASC
t CAH
t ASC
tCAH
t ASC t CAH
Address
Row
Column 1
Column 2
Column N
t WCS
t WCH
t WCS
t WCH
t WCS
t WCH
WE
t DS
t DH
t DS
t DH
t DS
t DH
Din
Din 1
Din 2
Din N
Dout
High-Z*
* t WCS
t WCS (min)
23
HB56UW3273 Series
EDO Page Mode Delayed Write Cycle*18
t RASP t RP RAS tT t CSH t RCD
CAS
t CP t CAS t HPC t CAS
t CP t RSH t CAS
t CRP
t RAD t ASR t RAH Address Row t ASC t CAH Column 1 t CWL t RCS WE t WP t DZC t DS t DH Din t DZO t OED Din 1 t DZO t OED t WP t DZC t DS t DH Din 2 t DZO t OED t WP t DZC t DS t DH Din N t RCS t ASC t CAH Column 2 t CWL t RCS t ASC t CAH Column N t CWL t RWL

t OEP t OEP t OEP
t OEH t OEH t OEH OE t CLZ t CLZ t CLZ t OEZ t OEZ t OEZ Dout High-Z
Invalid Dout Invalid Dout Invalid Dout
24
HB56UW3273 Series
EDO Page Mode Read-Modify-Write Cycle*18
t RASP t RP RAS tT t CP t RCD
CAS
t HPRWC t CP t CAS t CAS
t RSH t CAS
t CRP
t RAD t ASR t ASC t RAH Row t CAH Column 1 t RWD t AWD t CWD WE t RCS t WP t DZC t DS t DH Din t DZO
t OED
t ASC t CAH Column 2 t CWL t RCS t CPW t AWD t CWD t RCS t CWL
t ASC t CAH Column N t CPW t AWD t CWD t RWL t CWL
Address
t WP t DZC t DS t DH Din 2 t OED
t WP t DZC t DS t DH Din N t OED
Din 1
t OEP
t OEH
t DZO
t OEP
t OEH
t DZO
t OEP
t OEH
*
OE t OHO t OHO t OHO t AA t OEA t CAC t RAC t AA t CPA t OEA t CAC t AA t CPA t OEA t CAC t CLZ t OEZ t CLZ t OEZ t CLZ t OEZ
High-Z
Dout
Dout 1
Dout 2
Dout N
25
HB56UW3273 Series
EDO Page Mode Mix Cycle (1)
t RP
RAS
t RASP t CRP tCAS tRSH t RCS tCPW tAWD t ASC tRAH Row tCAH t ASC t CAH Column 2 t CAL tASC t CAH Column 3 t CAL t DS High-Z tOED t DH Din 3 t OEP tWED tWP t RAL t CAH Column 4 t CAL tRDD tCDD t RCS t RRH t RCH
tT
CAS
t CP t CAS t CSH t RCD t WCS t WCH t CAS
t CP tCAS
t CP
WE
tASR
Address
tASC
Column 1 t CAL
t DS
Din
t DH Din 1

OE
tCPA tAA tOEA
tCPA
tCPA tAA
t OEZ
tAA
tOFR tWEZ tOEZ
tCAC
tOHO tOFF tOH
tCAC
t DOH
tCAC t OHO
tOEA
Dout
Dout 2
Dout 3
Dout 4
26
HB56UW3273 Series
EDO Page Mode Mix Cycle (2)
t RP
RAS
t RASP
tT
CAS
t CSH t CAS t RCD t RCS t RCHR
t CP t CAS
t CP tCAS
t CP tCAS t RCS tCPW tWP t RAL tASC t CAH Column 4 t CAL t DS t DH Din 3 t OEP tOED tCOP tRSH
t CRP
t RCH tWCS t WCH
t RCS
t RRH t RCH
WE
tASR
Address
tRAH Row
t ASC
tCAH
t ASC t CAH Column 2 t CAL t DS t DH Din 2 t OEP tOED tCOL
t ASC t CAH Column 3 t CAL
Column 1 t CAL
tRDD tCDD
Din
High-Z
tWED
OE
tAA tOEA tCAC tRAC t OHO
Dout
t OEA tOEZ tCPA tAA tCAC tOEZ t OHO
Dout 3
tCPA tAA tCAC tOEA
tOFR tWEZ tOEZ tOHO tOFF tOH Dout 4
Dout 1
27
,,

,
, ,
HB56UW3273 Series
Physical Outline
HB56UW3273E Series Unit: mm/inch
133.35 5.250 4.00max. 0.157max. Component area
60.96 2.400 3.00 0.118
1
B
B
A
84
8.89 0.350 3.00 0.118
11.43 0.450
36.83 1.450
54.61 2.150
1.27 0.10 0.050 0.004
127.35 5.014
2 - 3.00 2 - 0.118 85
168
4.00 0.157
2-R FULL
Component area
Detail A
Detail B
2.54 min. 0.100 min.
1.27 0.050
3.175 0.125
0.25 max. 0.010 max.
1.00 0.05 0.039 0.002
28
3.125 0.125 0.123 0.005
6.35 0.250 2.00 0.10 0.079 0.004
17.78 0.700
4.00min. 0.157min.

, ,
, ,

,
HB56UW3273 Series
HB56UW3273EJ Series Unit: mm/inch
9.00max. 0.354max. 176.53 6.950 Component area
,, , ,
3.00 0.118
2 - R FULL
1
B
B
A
84
8.89 0.350 3.00 0.118
11.43 0.450
36.83 1.450
54.61 2.150
1.270.10 0.0500.004
127.35 5.014 133.35 5.250
2 - 3.00 2 - 0.118 85
168
4.00 0.157
17.78 0.700
Component area
Detail A
Detail B
2.54 min. 0.100 min.
1.27 0.050
3.175 0.125
0.25 max. 0.010 max.
1.00 0.05 0.039 0.002
3.125 0.125 0.123 0.005
6.35 0.250 2.00 0.10 0.079 0.004
41.91 1.650
22.10 0.870
4.00 min. 0.157 min.
29
HB56UW3273 Series
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
30
HB56UW3273 Series
Revision Record
Rev. 0.0 Date Sep. 6, 1996 Contents of Modification Initial issue Drawn by Approved by
31

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