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| SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs * GOLD METALLIZATION * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 230 MHz. M174 epoxy sealed ORDER CODE SD2931 BRANDING SD2931 PIN CONNECTION 4 1 3 1. Drain 2. Source 2 3. Gate 4. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Volatge Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 125 125 20 20 292 200 -65 to +150 Unit V V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.6 C/W April, 17 2002 1/10 SD2931 ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q)* VDS(ON) GFS CISS COSS CRSS * Test Conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10 A ID = 5 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz Min. 125 Typ. Max. Unit V 5 5 1.5 4.0 3.0 5 480 190 18 mA A V V mho pF pF pF VGS(Q) sorted with alpha/numeric code marked on unit. REF. 7163910B DYNAMIC Symbol POUT GPS D Load Mismatch VDD = 50 V VDD = 50 V VDD = 50 V Test Conditions IDQ = 250 mA IDQ = 250 mA POUT = 150 W IDQ = 250 mA POUT = 150 W f = 175 MHz f = 175 MHz f = 175 MHz f = 175 MHz Min. 150 14 55 10:1 15 65 Typ. Max. Unit W dB % VSWR VDD = 50 V IDQ = 250 mA POUT = 150 W All Phase Angles IMPEDANCE DATA D V GS SORTS AA BB ZDL 1.5 - 1.6 1.6 - 1.7 1.7 - 1.8 1.8 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 2.2 - 2.3 2.3 - 2.4 2.4 - 2.5 2.5 - 2.6 2.6 - 2.7 2.7 - 2.8 J K L M N P Q R S T U V 2.8 - 2.9 2.9 - 3.0 3.0 - 3.1 3.1 - 3.2 3.2 - 3.3 3.3 - 3.4 3.4 - 3.5 3.5 - 3.6 3.6 - 3.7 3.7 - 3.8 3.8 - 3.9 3.9 - 4.0 CC DD EE A B C D E F G H Typical Input Impedance Typical Drain Load Impedance G Zin S FREQ 30 MHz 175 MHz ZIN () 1.7 - j 5.7 1.2 - j 2.0 ZDL () 6.8 + j 0.9 2.0 + j 2.4 2/10 SD2931 TYPICAL PERFORMANCE Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage 10000 20 Tc=-20 C C, CAPACITANCE (pF) f =1MHz ID, DRAIN CURRENT (A) 15 Tc=+25 C 1000 Ciss 10 VDS = 10 V Coss Tc=+80 C 100 5 Crss 10 0 10 20 30 40 50 0 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature Maximum Thermal Resistance vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.12 1.08 1.04 Id =11A Id =9A Id =10A Id =7A Id =5A 0.72 0.7 RTH(j-c) (C/W) 0.68 0.66 0.64 0.62 0.6 0.58 25 35 45 55 65 75 85 1 0.96 0.92 0.88 Id =4A Id =2A Id =1A Vds= 10 V 0.84 0.8 -25 0 25 Id =.25A Id =.1A Tc, CASE TEMPERATURE (C) 100 50 75 Tc, CASE TEMPERATURE (C) Safe Operating Area 100 Ids (A) 10 (1) 1 1 10 100 1000 Vds (V) (1) Current in this area may be limited by Rds(on) 3/10 SD2931 TYPICAL PERFORMANCE (175 MHz) Output Power vs. Input Power Output Power vs. Input Power 270 270 Pout, OUTPUT POWER (W) 240 210 180 150 120 90 60 30 0 0 5 10 15 Pout, OUTPUT POWER (W) Vdd= 50V Vdd= 40V 240 210 180 150 120 90 60 30 0 0 5 10 Vdd= 50V Idq= 250mA f= 175MHz Tc =-20 C Tc =+25 C Tc =+80 C f= 175MHz Idq= 250mA 20 25 15 20 25 Pin, INPUT POWER (W) Pin, INPUT POWER(W) Power Gain vs. Output Power Efficiency vs. Output Power 18 80 70 60 50 40 30 20 0 50 100 150 200 250 0 50 100 150 200 250 Gp, POWER GAIN (dB) 14 12 10 8 6 Vdd=50V Idq=250mA f=175Mhz Nd, EFFICIENCY (%) 16 Vdd=50V Idq=250mA f=175Mhz Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs. Supply Voltage 270 240 Pin =10W Drain Current vs. Gate-Source Voltage 20 Tc=-20 C Pout,OUTPUT POWER(W) ID, DRAIN CURRENT (A) 210 180 150 Pin =2.5W 120 90 60 30 0 24 28 32 36 40 44 48 52 Idq= 250mA f= 175MHz Pin =5W 15 Tc=+25 C 10 Tc=+80 C 5 0 2 2.5 3 3.5 4 4.5 5 5.5 6 Vdd,DRAIN VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V) 4/10 SD2931 175 MHz Test Circuit Schematic (Production Test Circuit) Note: All dimensions in inches REF. 1021579C 175 MHz Test Circuit Component Part List T1 T2 FB1 FB2, FB3 FB4 L1 PCB R1, R3 R2 R4 R5 C1, C11 C2 C3, C8, C9 C4 C5 C6 C7 C10 C12, C15 C13, C14,C16, C17 C18 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6" Long 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6" Long Toroid X 2, 0.5" OD .312" ID 850 2 Turns VK200 Shield Bead, 1" OD 0.5" ID 850 3 Turns 1/4 Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12" Long 0.62" Woven Fiberglass, 1 oz. Copper, 2 Sides, r = 2.55 470 ohm 1 W Chip Resistor 360 ohm 1/2 W Resistor 20 Kohm 10 Turn Potentiometer 560 ohm 1 W Resistor 470 pF ATC Chip Cap 43 pF ATC Chip Cap Arco 404, 12-65 pF Arco 423, 16-100 pF 120 pF ATC Chip Cap 0.01 F ATC Chip Cap 30 pF ATC Chip Cap 91 pF ATC Chip Cap 1200 pF ATC Chip Cap 0.01 F / 500 V Chip Cap 10 F 63 V Electrolytic Capacitor 5/10 SD2931 175 MHz Test Circuit Photomaster 6.4 inches 175 MHz Test Circuit 6/10 4 inches SD2931 TYPICAL PERFORMANCE (30 MHz) Output Power vs. Input Power Power Gain vs. Output Power Pout, OUTPUT POWER (W) 250 30 Vdd = 50 V 200 150 100 50 0 0 0.1 0.2 0.3 0.4 0.5 PG, POWER GAIN (dB) 29 28 27 26 25 24 0 40 80 120 160 200 Vdd = 40 V f = 30 MHz IDQ = 250 mA f = 30 MHz VDD = 50 V IDQ = 250 mA Pin, INPUT POWER (W) Pout, OUTPUT POWER (W) Efficiency vs. Output Power Output Power vs. Supply Voltage 200 70 60 Pin=.31 W Pin=.22 W Efficiency (%) 150 40 30 20 10 0 0 40 80 120 160 200 Pout(W) 50 100 Pin=.13 W f = 30 MHz VDD = 50 V IDQ = 250 mA 50 f = 30 MHz IDQ = 250 mA 0 24 28 32 36 40 44 48 52 Pout, OUTPUT POWER (W) VDD(V) Output Power vs. Gate Voltage Pout, OUTPUT POWER (W) 200 T= +25 C T= -20 C 150 100 T= +80 C VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant 0 1 2 3 4 5 6 50 0 VGS GATE-SOURCE VOLTAGE (V) 7/10 SD2931 30 MHz Test Circuit Schematic (Engineering Test Circuit) 30 MHz Test Circuit Component Part List T1 T2 FB1 FB2 FB3 RFC1 PCB R1, R3 R2 C1,C4,C6,C7,C8,C9, C11,C12,C13 C2,C3 C5 C10 C14 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15" Long 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15" Long Toroid 1.7" OD .30" ID 220 4Turns Surface Mount EMI Shield Bead Toroid 1.7" OD .300" ID 220 3Turns Toroid 0.5" OD 0.30" ID 125 4Turns 12 awg wire 0.62" Woven Fiberglass, 1 oz. Copper, 2 Sides, r = 2.55 1 K ohm 1 W Chip Resistor 680 ohm 3W Wirewound Resistor 0.1 F ATC Chip Cap 750 pF ATC Chip Cap 470 pF ATC Chip Cap 10 F 63 V Electrolytic Capacitor 100 F 63 V Electrolytic Capacitor 8/10 SD2931 M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 5.584 3.18 6.22 18.28 3.18 24.64 12.57 0.08 2.11 3.81 24.89 12.83 0.18 3.00 4.45 7.11 25.53 3.05 26.67 3.30 1.005 0.120 0.970 0.495 0.003 0.083 0.150 6.48 18.54 0.245 0.720 0.125 0.980 0.505 0.007 0.118 0.175 0.280 1.050 0.130 MIN. 0.219 0.125 0.255 0.730 TYP. MAX 0.230 DIM. A B C D E F G H I J K L M MIN. 5.56 TYP. Controlling Dimension in Inches 1011000D 9/10 SD2931 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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