View 70053_970142.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DG441/442
Vishay Siliconix
Quad SPST CMOS Analog Switches
FEATURES
D D D D D D D D Low On-Resistance: 50 W Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action--tON: 150 ns Low Charge Injection--Q: -1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic Single Supply Capability D D D D D D D
BENEFITS
Less Signal Errors and Distortion Reduced Power Supply Requirements Faster Throughput Improved Reliability Reduced Pedestal Errors Simplifies Retrofit Simple Interfacing
APPLICATIONS
D D D D D D D D Audio Switching Battery Powered Systems Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments
DESCRIPTION
The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 W, typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
D1 Key 3 IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 Top View 6 7 8 11 10 9 S3 D3 IN3 16 15 14 13 12 IN2 D2 S2 GND Dual-In-Line and SOIC V+ NC S4 S1 V- NC 4 5 LCC 6 7 8 2 1 20 19 18 17 S2 V+ NC NC S3 IN1 NC IN2 D2
DG441
Top View
16 15 14
DG441
9 D4 10 IN4 11 NC 12 IN3 13 D3
TRUTH TABLE Logic
0 1
DG441
ON OFF
DG442
OFF ON
Logic "0" v 0.8 V Logic "1" w 2.4 V Document Number: 70053 E-77798--Rev. G, 08-Mar-99 www.vishay.com S FaxBack 408-970-5600
4-1
DG441/442
Vishay Siliconix
ORDERING INFORMATION
Temp Range Package
16-Pin Plastic DIP -40 to 85 C 40 85_C 16-Pin Narrow SOIC
Part Number
DG441DJ DG442DJ DG441DY DG442DY DG441AK DG441AK/883
16-Pin C DIP 16 Pi CerDIP -55 to 125 C 55 125_C
5962-9204101MEA DG442AK DG442AK/883 5962-9204102MEA
LCC-20
5962-9204101M2A 5962-9204102M2A
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 12 mW/_C above 25_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
S
INX
Level Shift/ Drive
V-
V+
GND D
V-
FIGURE 1.
www.vishay.com S FaxBack 408-970-5600
4-2
Document Number: 70053 E-77798--Rev. G, 08-Mar-99
DG441/442
Vishay Siliconix
SPECIFICATIONSa FOR DUAL SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Lk C t Channel On Leakage Current VANALOG rDS(on) IS(off) ID(off) ID(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V V+ = 16.5, V- = -16.5 V , VD = "15.5 V VS = #15.5 V 15 5 V, 15 5 V+ = 16.5 V, V- = -16.5 V VS = VD = "15.5 V Full Room Full Room Full Room Full Room Full 50 "0.01 "0.01 "0.08 -0.5 -20 -0.5 -20 -0.5 -40 -15 15 85 100 0.5 20 0.5 20 0.5 40 -0.5 -5 -0.5 -5 -0.5 -10 -15 15 85 100 0.5 5 0.5 5 0.5 10 nA A V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Digital Control
Input Current VIN Low Input Current VIN High IIL IIH VIN under test = 0.8 V, All Other = 2.4 V VIN under test = 2.4 V, All Other = 0.8 V Full Full -0.01 0.01 -500 -500 500 500 -500 -500 500 nA 500
Dynamic Characteristics
Turn-On Time DG441 Turn-Off Time DG442 Charge Injectione Off Isolatione Crosstalke (Channel-to-Channel) Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tOFF Q OIRR XTALK CS(off) CD(off) CD(on) VANALOG = 0 V tON RL = 1 kW, CL = 35 pF kW VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W, CL = 5 pF f = 1 MHz Room Room Room Room Room Room Room f = 1 MHz Room Room 4 16 pF F 150 90 110 -1 60 dB 100 4 250 120 210 250 120 210 pC ns
Power Supplies
Positive Supply Current Negative Supply Current Ground Current I+ I- IGND V+ = 16.5 V, V- = -16.5 V VIN = 0 or 5 V Full Room Full Full 15 -0.0001 -15 -1 -5 -100 100 -1 -5 -100 100 mA A
Document Number: 70053 E-77798--Rev. G, 08-Mar-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG441/442
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = -10 mA, VD = 3 V, 8 V V+ = 10.8 V Full Room Full 100 0 12 160 200 0 12 160 200 V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW, CL = 35 p , pF VS = 8 V, See Figure 2 V S Fi CL = 1 nF Vgen = 6 V, Rgen = 0 W Room Room Room 300 60 2 450 200 450 ns 200 pC
Power Supplies
Positive Supply Current Negative Supply Current Ground Current I+ I- IGND V+ 13.2 V, V- V = 13 2 V V = 0 V VIN = 0 or 5 V Full Room Full Full 15 -0.0001 -15 -1 -100 -100 100 -1 -100 -100 100 mA A
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70053 E-77798--Rev. G, 08-Mar-99
DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltage
100 r DS(on) Drain-Source On-Resistance (W ) - "5 V r DS(on) Drain-Source On-Resistance (W ) - 80 70 60 125_C 50 40 30 20 10 0 -15 -10 -5 0 5 10 15 20 -15 -10 -5 0 5 10 15 VD - Drain Voltage (V) VD - Drain Voltage (V) 0_C -40_C -55_C 85_C 25_C V+ = 15 V V- = -15 V
rDS(on) vs. VD and Temperature
80
60
"8 V "10 V "12 V
40
"15 V "20 V
20
0 -20
rDS(on) vs. VD and Unipolar Power Supply Voltage
300 V- = 0 V r DS(on) Drain-Source On-Resistance (W ) - r DS(on) Drain-Source On-Resistance (W ) - 250 V+ = 5 V 200 120 100 80 60 40 20 0 0 4 8 12 16 20 0 140
rDS(on) vs. VD and Temperature (Single 12-V Supply)
125_C 85_C
25_C
150 8V 100 10 V 12 V 15 V 50 20 V 0 VD - Drain Voltage (V)
-55_C 0_C -40_C V+ = 12 V V- = 0 V
2
4
6
8
10
12
VD - Drain Voltage (V)
Crosstalk and Off Isolation vs. Frequency
140 120 100 20 Q (pC) (-dB) 80 60 Off Isolation 40 20 0 100 1k 10 k 100 k 1M 10 M V+ = 15 V V- = -15 V Ref. 10 dBm 10 0 -10 -20 -30 -10 50 40 Crosstalk 30
Charge Injection vs. Source Voltage
CL = 1 nF
V+ = 15 V V- = -15 V
V+ = 12 V V- = 0 V
-5
0 VS - Source Voltage (V)
5
10
f - Frequency (Hz)
Document Number: 70053 E-77798--Rev. G, 08-Mar-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Threshold vs. Supply Voltage
2.4 20 IS(off) , ID(off) 0 1.6 I S, I D (pA) V IN (V)
Source/Drain Leakage Currents
-20
-40
ID(on)
0.8
-60 V+ = 15 V V- = -15 V For I(off), VD = -VS -10 -5 0 5 10 15
-80 0 0 "5 "10 "15 "20
-100 -15
V+, V- Positive and Negative Supplies (V)
VD or VS - Drain or Source Voltage (V)
Source/Drain Leakage Currents (Single 12-V Supply)
10 IS(off) , ID(off) 0 50
Operating Voltage
V+ 44 40 5 V - CMOS Compatible S IN D
I S, I D (pA)
IS(on) + ID(on) -20 V+ = 12 V V- = 0 V For ID, VS = 0 For IS, VD = 0
20
-30
10 3 0
-40 0 2 4 6 8 10 12
VD or VS - Drain or Source Voltage (V)
Switching Time vs. Power Supply Voltage
160 140 tON 120 300 t (ns) 400 500
t (ns)
100 80 tOFF 60 40 20 "10
200
100 tOFF 0 8 10 12 14 16 18 20 22 VS - Source Voltage (V) Document Number: 70053 E-77798--Rev. G, 08-Mar-99
"12
"14
"16
"18
"20
"22
Supply Voltage (V) www.vishay.com S FaxBack 408-970-5600
4-6
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
TTL Compatible VIN = 0.8 V, 2.4 V 0 -10 -20 V- = 0 V tON
-10 V+ (V)
30
V-
CMOS Compatible -30 -40 -50
V- - Negative Supply (V)
Switching Time vs. Power Supply Voltage
DG441/442
Vishay Siliconix
TEST CIRCUITS
+15 V Logic Input D RL 1 kW 3V 50% 0V VO CL 35 pF Switch Input VS VO 80% tOFF 80% 50% tr <20 ns tf <20 ns
V+ "10 V 3V GND V- S IN
-15 V CL (includes fixture and stray capacitance) +15 V
Switch Output Note:
0V tON Logic input waveform is inverted for DG442.
FIGURE 2. Switching Time
DV
O
Rg
V+ S IN D CL 1 nF V- VO
VO INX OFF ON OFF
(DG441)
OFF ON Q = DVO x CL OFF
3V GND
INX -15 V
(DG442) FIGURE 3. Charge Injection
+15 V C V+ VS Rg = 50 W 0V, 2.4 V NC 0V, 2.4 V S2 IN2 GND V- C D2 VO RL S1 IN1 D1
V+
C = 1 mF tantalum in parallel with 0.01 mF ceramic +15 V C
50 W
VS Rg = 50 W 0V, 2.4 V
S
D
VO
IN GND V- C
RL
-15 V VS VO
-15 V XTALK Isolation = 20 log C = RF bypass VS VO
Off Isolation = 20 log
FIGURE 4. Crosstalk
FIGURE 5. Off Isolation
+15 V C V+ S Meter 0 V, 2.4 V IN D GND V- C HP4192A Impedance Analyzer or Equivalent
-15 V
FIGURE 6. Source/Drain Capacitances
Document Number: 70053 E-77798--Rev. G, 08-Mar-99 www.vishay.com S FaxBack 408-970-5600
4-7
DG441/442
Vishay Siliconix
APPLICATIONS
+24 V
+15 V
RL
DG442
+15 V IN
V+ 150 W
I = 3A VN0300L, M +15 V VIN 10 kW + +15 V - S
1/4 DG442
D CH + - VOUT
GND
V- IN
0 = Load Off 1 = Load On
-15 V
H = Sample L = Hold
FIGURE 7. Power MOSFET Driver
FIGURE 8. Open Loop Sample-and-Hold
VIN
+ - +15 V V+
VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit.
GAIN1 AV = 1
R1 90 kW With SW4 Closed VOUT VIN = R1 + R2 + R3 + R4 R4 = 100
GAIN2 AV = 10
R2 5 kW
GAIN3 AV = 20 GAIN4 AV = 100
R3 4 kW
R4 1 kW
DG441 or DG442
V- GND
-15 V
FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier
www.vishay.com S FaxBack 408-970-5600
4-8
Document Number: 70053 E-77798--Rev. G, 08-Mar-99

▲Up To Search▲

Price & Availability of 70053

	To Download 70053 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .