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3N163/3N164
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
3N163 3N164
V(BR)DSS Min (V)
-40 -30
VGS(th) (V)
-2 to -5 -2 to -5
rDS(on) Max (W)
250 300
ID(on) Min (mA)
-5 -3
Crss Max (pF)
0.7 0.7
tON Typ (ns)
18 18
Features
Benefits
Applications
D Ultra-High Input Impedance Amplifier D Ultra-Low Input Leakage: 0.02 pA Typ. D High Input Impedance Isolation D High Gate Breakdown Voltage: "125 V D Minimize Handling ESD Problems D Smoke Detectors D High Off Isolation without Power D Electrometers D Normally Off D Analog Switching D Digital Switching
Description
The 3N163/164 are lateral p-channel MOSFETs designed for analog switch and preamplifier applications where high speed and low parasitic capacitances are required. The hermetic TO-206AF package is compatible with military processing per military standards (see Military information).
TO-206AF (TO-72) D 1 4 S
2 G Top View
3 Case Substrate
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Drain Source Voltage (3N163) . . . . . . . . . . . . . . . . . . . . . -40 V (3N164) . . . . . . . . . . . . . . . . . . . . . -30 V Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 mW Notes: a. Derate 3 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
Siliconix P-37404--Rev. D, 04-Jul-94
1
3N163/3N164
Specificationsa
Limits
3N163 3N164
Parameter Static
Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Gate-Threshold Voltage Gate-Source Voltage
Symbol
Test Conditions
Typb Min Max Min Max Unit
V(BR)DSS V(BR)SDS VGS(th) VGS
ID = -10 mA, VDS = 0 V IS = -10 mA, VGD = VBD = 0 V ID = -10 mA, VGS = VDS ID = -0.5 mA, VDS = -15 V VGS = -40 V, VDS = 0 V
-70 -70 -2.5 -3.5 <-1 -1 <-1 -1 -8 -20 -10 -25 -10 180 270
-40 -40 -2 -3 -5 -6.5 -10
-30 -30 V -2 -2.5 -5 -6.5
Gate-Body Gate Body Leakage
IGSS
TA = 125_Cd VGS = -30 V, VDS = 0 V TA = 125_Cd
-10
pA
Zero-Gate Zero Gate Voltage Drain Current
IDSS
VDS = -15 V, VGS = 0 V TA = 125_Cd
-200
-400 nA
Zero-Gate Zero Gate Voltage Source Current On-State Drain Currentc Drain Source On-Resistance Drain-Source On Resistance
ISDS ID(on) rDS( ) DS(on)
VGD = VBD = 0 V, VSD = -20 V TA = 125_Cd VDS = -15 V, VGS = -10 V VGS = -20 V, ID = -100 mA TA = 125_Cd
-400
-800
pA nA
-5
-30 250
-3
-30 300
mA W
Dynamic
Forward Transconductance c Common-Source Output Conductancec Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs gos Ciss Coss Crss VDS = -15 V, ID = -10 mA 15 V 10 A f = 1 MHz VDS = -15 V, ID = -10 mA S f = 1 kHz 2.7 150 2.4 2.5 0.5 2 4 250 3.5 3 0.7 1 4 250 3.5 3 0.7 pF mS mS
Switchinge
Turn-On Turn On Time Turn-Off Time td(on) tr td(off) VDD = -15 V, RL = 1500 W 15 ID ^ -10 mA, VGEN = -12 V RG = 50 W 5 13 25 12 24 50 12 24 50 ns
Notes: a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC. e. Switching time is essentially independent of operating temperature.
MRA
2
Siliconix P-37404--Rev. D, 04-Jul-94
3N163/3N164
Typical Characteristics
-50
Output Characteristics
VBS = 0 V VGS = -20 V -18 V -16 V I D - Drain Current (mA)
-50
Transfer Characteristics
VDS = VGS VBS = 0 V
-40 I D - Drain Current (mA)
-40
-30
-14 V -12 V -10 V
-30
-20
-20
-10
-8 V -6 V
-10
0 0 -10 -20 -30 -40 -50 VDS - Drain-Source Voltage (V)
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
Low-Level Output Characteristics
-1000 g fs - Forward Transconductance ( mA) -800 -600 I D - Drain Current (mA) -400 -200 0 200 400 600 800 1000 0.4 0.2 0 -0.2 -0.4 VDS - Drain-Source Voltage (V) VBS = 0 V VGS = -10 V -9 V -8 V -7 V -6 V 10 k
Common-Source Forward Transconductance vs. Drain Current
VDS = -15 V VBS = 0 V f= 1 kHz TA = 25_C
-5 V -4 V
1k
125_C
100
10 -0.01
-0.1
-1
-10
ID - Drain Current (mA)
100 k rDS(on) - Drain-Source On-Resistance ( W )
Drain-Source On-Resistance vs. Gate-Source Voltage
ID = 100 mA VBS = 0 V
2.5
Low-Level Drain-Source On-Voltage vs. Gate-Source Voltage
V DS - Drain-Source Voltage (V)
2.0 ID = 0.1 mA 10 mA 1.0
10 k
1.5
1k
TA = 125_C
TA = 25_C 100 0 -10 VGS - Gate-Source Voltage (V) -20
0.5 1 mA 0 0 -10 VGS - Gate-Source Voltage (V) -20
Siliconix P-37404--Rev. D, 04-Jul-94
3
3N163/3N164
Typical Characteristics (Cont'd)
Capacitance vs. Gate-Source Voltage
3.0 Ciss 2.4 I S(off) , I D(off) - Leakage 10 nA IS(off) 1 nA ID(off) Coss C (pF) 1.8 VDS = -15 V VBS = 0 V f= 1 MHz 100 nA
Drain-Source Leakage Current vs. Temperature
1.2 Crss
100 pA
0.6
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
10 pA 10 30 50 70 90 110 130 150 TA - Temperature (_C)
Common-Source Output Conductance vs. Drain Voltage
10 k VBS = 0 V f= 1 kHz g os - Output Conductance ( m S) 1000
Common-Source Output Conductance vs. Drain Current
VDS = -15 V VBS = 0 V f= 1 kHz 100
g os - Output Conductance ( m S)
1k
ID(on) = -10 mA 100 -1 mA 10 0 -5 -10 -15 -20 -25 -30 VDS - Drain-Source Voltage (V)
10
1 -0.1 -1.0 -10 -100 ID - Drain Current (mA)
Switching Time Test Circuit
To Scope -VDD 0V 510 W RL VIN VOUT To Scope Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz Sampling Scope tr < 360 ps RIN = 1 MW CIN = 2 pF BW = 500 MHz -12 V td(on) 0V 10% VOUT -VDD tr tf 90% td(off) 50%
VIN
51 W
4
Siliconix P-37404--Rev. D, 04-Jul-94

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