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| PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 30 W with 14 dB gain @ 945 MHz / 28V * NEW RF PLASTIC PACKAGE DESCRIPTION The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. PD57030 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030's superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (formed lead) ORDER CODE PD57030 BRANDING PD57030 PowerSO-10RF (straight lead) ORDER CODE PD57030S BRANDING PD57030S Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 20 4 52.8 165 -65 to +150 Unit V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.8 C/W March, 7 2003 1/8 PD57030 - PD57030S ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 10mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3A VDS = 28 V VDS = 28 V VDS = 28V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 57 30 2.3 Min. 65 1 1 5.0 Typ. Max. Unit V A A V V mho pF pF pF DYNAMIC Symbol POUT GP D Load mismatch VDS = 28V VDS = 28V VDS = 28V Test Conditions IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA f = 945 MHz POUT = 30 W f = 945 MHz POUT = 30 W f = 945 MHz POUT = 30 W f = 945 MHz Min. 30 13 45 10:1 14 53 Typ. Max. Unit W dB % VSWR IDQ = 50 mA VDS = 28V ALL PHASE ANGLES PIN CONNECTION SOURCE D ZDL Typical Input Impedance GATE DRAIN Typical Drain Load Impedance G Zin S SC15200 SC13140 IMPEDANCE DATA PD57030S FREQ. MHz 925 945 960 ZIN () 0.929 - j 0.315 0.809 - j 0.085 0.763 - j 0.428 ZDL() 2.60 + j 1.45 2.46 + j 0.492 2.35 + j 0.591 2/8 PD57030 - PD57030S TYPICAL PERFORMANCE Capacitances vs.Drain Voltage C (pF) 100 Ciss Coss Drain Current vs Gate-Source Voltage Id (A) 5 4 3 10 2 Crss 1 1 0 5 10 15 20 25 30 0 2 3 4 5 6 7 Vdd (V) Vgs (V) Gate-Source Voltage vs Case Temperature Vgs (Normalized) 1.05 Id = 3A Id = 2.5A 1 Id = 2A Id = 1.5A Id = 1A 0.95 Id = 500mA Id = 250mA Vds = 10V 0.9 -50 0 50 100 150 Tc (C) 3/8 PD57030 - PD57030S TYPICAL PERFORMANCE (PD57030S) Output Power vs Input Power Pout (W) 50 945 MHz Input Return Loss vs Output Power IRL (dB) 5 0 40 925 MHz 960 MHz -5 30 -10 960 MHz 20 -15 945 MHz -20 10 Vdd = 28V Idq = 50mA 925 MHz -25 Vdd = 28V Idq = 50mA 0 0 0.5 1 1.5 2 -30 0 10 20 30 40 50 Pin (W) Pout (W) Power Gain vs Output Power Pg (dB) 18 Efficiency vs. Output Power Eff (%) 70 16 925 MHz 60 14 960 MHz 945 MHz 960 MHz 12 50 925 MHz 945 MHz 10 40 8 30 6 Vdd = 28V Idq = 50mA Vdd = 28V Idq = 50mA 4 0 10 20 30 40 50 20 0 10 20 30 40 50 Pout (W) Pout (W) Output Power vs Bias Current Pout (W) 35 925 MHz Efficiency vs Bias Current Eff (%) 60 925 MHz 945 MHz 945 MHz 30 960 MHz 50 960 MHz 25 40 20 30 15 Pin = 29.1dBm Vdd = 28V 20 Pin = 29.1dBm Vdd = 28V 10 0 100 200 300 400 500 10 0 100 200 300 400 500 Idq (mA) Idq (mA) 4/8 PD57030 - PD57030S TYPICAL PERFORMANCE (PD57030S) Output Power vs Drain Voltage Pout (W) 35 945 MHz Efficiency vs Drain Voltage Eff (%) 60 925 MHz 945 MHz 30 925 MHz 50 960 MHz 25 960 MHz 40 20 30 15 10 Pin = 29.1dBm Idq = 50mA 20 Pin = 29.1dBm Idq = 50mA 5 10 15 20 25 30 10 10 15 20 25 30 Vdd (V) Vdd (V) Output Power vs Gate-Source Voltage Pout (W) 40 925 MHz 30 945 MHz 20 960 MHz 10 Pin = 29.1dBm Vdd = 28V 0 0 1 2 3 4 5 Vgs (V) 5/8 PD57030 - PD57030S TEST CIRCUIT SCHEMATIC VGG + + + + VD D RF IN RF OUT TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 R1 R2 R3 FB1, FB2 L1, L2 DESCRIPTION 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1F / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10F / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220F / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 18K, 1W SURFACE MOUNT CHIP RESISTOR 4.7M, 1W SURFACE MOUNT CHIP RESISTOR 120, 2W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE 6/8 PD57030 - PD57030S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER PD57030S 6.4 inches 4 inches 7/8 PD57030 - PD57030S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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