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STP11NM60FD STP11NM60FDFP
N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP FDmeshTMPower MOSFET (with FAST DIODE)
TYPE STP11NM60FD STP11NM60FDFP
n n n n n n
VDSS 600 V 600 V
RDS(on) < 0.45 < 0.45
ID 11 A 11 A
TYPICAL RDS(on) = 0.40 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
3 1 2
1
3 2
TO-220
TO-220FP
DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. APPLICATIONS n ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt VISO Tstg Tj February 2002 Parameter STP11NM60FD Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --65 to 150
(1)ISD<11A, di/dt<400A/s, VDDValue STP11NM60FDFP 600 600 30 11 7 44 160 0.88 20 2500 11 (*) 7 (*) 44 (*) 35 0.28
Unit V V V A A A W W/C V/ns V C
(*)Pulse width limited by safe operating area
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STP11NM60FD - STP11NM60FDFP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.78 62.5 300 TO-220FP 3.57 C/W C/W C
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 35 V) Max Value 5.5 350 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V Min. 600 1 100 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 5.5A Min. 3 Typ. 4 0.40 Max. 5 0.45 Unit V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 5.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.2 1000 208 28 100 3 Max. Unit S pF pF pF pF
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STP11NM60FD - STP11NM60FDFP
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 5.5A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 11A, VGS = 10V Min. Typ. 20 16 28 7.8 13 40 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 11A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 10 15 24 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11A, VGS = 0 ISD = 11A, di/dt = 100A/s, VDD = 50V (see test circuit, Figure 5) 190 1.1 14.5 Test Conditions Min. Typ. Max. 11 44 1.5 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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Thermal Impedance for TO-220 Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP11NM60FD - STP11NM60FDFP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP11NM60FD - STP11NM60FDFP
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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STP11NM60FD - STP11NM60FDFP
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STP11NM60FD - STP11NM60FDFP
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