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| AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. PACKAGE STYLE .400 2L FLG (A) 4x .062 x 45 2xB A .040 x 45 C F E D G 2xR H J K P FEATURES: I * 960-1215 MHz * Internal Input/Output Matching Network * PG = 7.5 dB at 150 W/ 1215 MHz * OmnigoldTM Metalization System * CB configuration, 35V DC operation L N M DIM A B C D E F G H I J K L M N P M IN IM UM inches / m m M A XIM UM inches / m m .135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 .396 / 10.06 .130 / 3.30 .407 / 10.34 .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 16.5 A 35 V 300 W -65 C to +200 C -65 C to +150 C 0.57 C/W ORDER CODE: ASI10548 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE PG C IC = 60 mA TC = 25 C NONETEST CONDITIONS IC = 100 mA IE = 10 mA VBE = 35 V VCE = 5.0 V IC = 5.0 A f = 960 - 1215 MHz RBE = 10 MINIMUM TYPICAL MAXIMUM 55 55 3.5 25 20 7.5 40 200 UNITS V V V mA --dB % VCc = 35 V POUT = 150 W PIN = 26.7 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 AJT150 AJERROR! REFERENCE SOURCE NOT FOUND. TYPICAL PERFORMANCE IMPEDANCE DATA: FREQUENCY 960 MHz 1050 MHz 1215 MHz Pin = 26.7 W Vcc = 35 V ZIN ZCL 3.8 - j3.6 3.0 - j2.4 2.0 - j2.5 2.1 + j3.8 1.2 + j2.5 1.7 + j2.4 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 |
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