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| AP9928EO Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Optimal DC/DC battery application D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 23m 5A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.5V Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 12 5 3.5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 125 Unit /W Data and specifications subject to change without notice 200206031 AP9928EO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.02 21 15.9 1.5 7.4 6.2 9 30 11 530 245 125 Max. Units 23 29 1 25 10 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=4.5V, ID=5A VGS=2.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS=12V ID=5A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=4.5V RD=10 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V,VS=1.2V Tj=25,IS=5A,VGS=0V Min. - Typ. - Max. Units 0.83 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad. AP9928EO 30 30 4.5V 3.5V 3.0V 2.5V ID , Drain Current (A) ID , Drain Current (A) 20 20 4.5V 3.5V 3.0V 2.5V V GS =2.0V 10 V GS =2.0V 10 T C =25 o C 0 0 1 2 3 4 0 0 1 2 3 T C =150 o C 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 95 1.9 I D = 5A T C =25 o C 1.5 I D = 5A V GS = 4.5V Normalized R DS(ON) 65 RDS(ON) (m ) 1.1 35 0.7 5 1 2 3 4 5 6 0.3 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9928EO 6 1.2 5 0.9 ID , Drain Current (A) 4 PD (W) 25 50 75 100 125 150 3 0.6 2 0.3 1 0 0 0 50 100 150 T c , Case Temperature ( C) o T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 10 100us 1ms 10ms Normalized Thermal Response (R thja) 0.2 0.1 0.1 0.05 ID (A) 1 0.02 0.01 100ms 0.1 PDM 0.01 Single Pulse t T 1s T C =25 C Single Pulse 0.01 o Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=208 oC/W DC 0.001 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9928EO f=1.0MHz 8 10000 I D =5A 7 VGS , Gate to Source Voltage (V) 6 5 4 C (pF) V DS =10V V DS =15V V DS =20V 1000 Ciss Coss Crss 100 3 2 1 0 0 5 10 15 20 25 10 1 7 13 19 25 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.6 10 1.2 IS (A) VGS(th) (V) T j =150 o C 1 T j =25 o C 0.8 0.1 0.4 0.01 0.2 0.5 0.8 1.1 0 -50 0 50 100 150 Junction Temperature ( o C ) V SD (V) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9928EO RD VDS 90% VDS RG D G TO THE OSCILLOSCOPE 0.5 x RATED VDS + 4.5V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE D G 0.5 x RATED VDS QG 4.5V QGS QGD S + VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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