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| AVD075P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD075P is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN PACKAGE STYLE .280 4L PILL (A) A .100x45 C FEATURES: * Internal Input Matching Network * PG = 7.5 dB at 75 W/1150 MHz * OmnigoldTM Metalization System B OG D E F MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC 5.5 A PEAK 65 V 220 W PEAK DIM A B C D E MINIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 .105 / 2.67 .205 / 5.21 .007 / 0.18 .065 / 1.65 .145 / 3.68 -65 C to +200 C -65 C to +150 C 0.8 C/W F G .275 / 6.99 .285 / 7.21 ORDER CODE: ASI10561 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG C IC = 10 mA IC = 10 mA IE = 1 mA VCE = 50 V VCE = 5.0 V TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 65 65 3.5 5.0 UNITS V V V mA --dB % IC = 500 mA f = 1025 - 1150 MHz 11 7.5 35 200 VCC = 50 V POUT = 75 W PIN = 13.5 W NOTE: Pulse Width = 10 S Duty Cycle = 1 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1 |
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