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| Silicon Variable Capacitance Diode Premilinary Data q BB 831 Frequency range up to 2 GHz; special design for use in TV-SAT indoor units Type Ordering Code (tape and reel) Q62702-B592 Pin Configuration Marking 1 2 C A white T Package BB 831 SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage (R 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 - 55 ... + 150 - 55 ... + 150 Unit V V mA C C VR VRM IF Top Tstg Rth JA 450 K/W Semiconductor Group 1 10.94 BB 831 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio Value typ. - - max. nA - - 20 500 pF 7.8 0.85 8.9 1.06 8.4 9.8 1.2 9.5 - Unit IR CT CT1/CT28 7.8 f = 1 MHz, VR = 1 V, 28 V Capacitance matching VR = 1 V ... 28 V, f = 1 MHz Series resistance CT = 9 pF, f = 470 MHz Series inductance CT/CT rS LS - - - - 1 2 3 - - % nH Package Outline SOD-323 Semiconductor Group 2 BB 831 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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