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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF145 HF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
HF power MOS transistor
FEATURES * High power gain * Low noise figure * Good thermal stability * Withstands full load mismatch.
d
k, halfpage
BLF145
PIN CONFIGURATION
1
4
DESCRIPTION
g
Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION
MBB072
s
2
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB, class-A SSB, class-AB Note 1. 2-tone efficiency. f (MHz) 28 28 VDS (V) 28 28 ID (A) 1.3 - PL (W) 8 (PEP) 30 (PEP) Gp (dB) > 24 typ. 20 D (%) (note 1) - typ. 40 d3 (dB) < -40 typ. -35
September 1992
2
Philips Semiconductors
Product specification
HF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDSS VGSS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF145
MAX. 65 20 6 68 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE 2.6 K/W 0.3 K/W
handbook, halfpage
10
MRA901
handbook, halfpage
100
MGP035
ID (A)
(1) (2)
Ptot (W) 80
1
(1)
60
(2)
40
10-1 1 10 VDS (V)
102
20 0 40 80 120 Th (C) 160
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched devices forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 10 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 10 mA; VDS = 10 V ID = 10 mA; VDS = 10 V ID = 1.5 A; VDS = 10 V ID = 1.5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 1.2 - - - - - TYP. - - - - - - 0.4 10 125 75 7
BLF145
MAX. UNIT - 2 1 4.5 100 - 0.75 - - - - V mA A V mV S A pF pF pF
MGP036
handbook, halfpage
4
handbook, halfpage
12
MGP037
T.C. (mV/K) 2
ID (A) 8
Tj = 25 C
125 C
0
-2 4 -4
-6 10
102
103
ID (mA)
104
0 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, halfpage
0.8
MGP038
handbook, halfpage
240
MGP039
RDS(on) () 0.6
C (pF) 180
Cis 0.4 120 Cos 0.2 60
0 0 ID = 1.5 A; VGS = 10 V. 40 80 120 Tj (C) 160
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
20
MRA900
Crs (pF)
10
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF power MOS transistor
APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 26 ; unless otherwise specified. RF performance in SSB operation in a common source class-A circuit. MODE OF OPERATION SSB, class-A Note f VDS (MHz) (V) 28 28 ID (A) 1.3 PL (W) 8 (PEP) GP (dB) > 24 typ. 27 d3 (dB) (note 1) > -40 typ. -43 d5 (dB) (note 1) < -40 typ. -70
BLF145
ZL () 18.4 + j5.2
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB.
handbook, halfpage
30
MGP040
handbook, halfpage
-20
MGP041
Gp (dB) 28
d3 (dB) -30
-40
26 -50
24 0 10 20 PL (W) PEP 30
-60
0
10
20
PL (W) PEP
30
Class-A operation; VDS = 28 V; ID = 1.3 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-A operation; VDS = 28 V; ID = 1.3 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.9
Power gain as a function of load power, typical values.
Fig.10 Third order intermodulation distortion as a function of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, full pagewidth
C5 C1 input 50 C3 C2 L1 R1 C4 C7 +VG C11 L6 R2 L2 C6 L4 D.U.T. L3 L5
C9 C10
output 50
C8 +VD C12
MGP042
f = 28 MHz.
Fig.11 Test circuit for class-A operation.
List of components (class-A test circuit) COMPONENT C1, C3, C8, C9 C2, C10 C4, C7 C5, C6 C11 C12 L1 L2, L3 L4 L5 L6 R1 R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 4.5), thickness 116 mm. DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor electrolytic capacitor 12 turns enamelled 0.5 mm copper wire stripline (note 2) 14 turns enamelled 1 mm copper wire VALUE 7 to 100 pF 39 pF 100 nF 27 pF 3 x 100 nF 2.2 F, 63 V 307 nH 30 1039 nH length 8 mm; int. dia. 4 mm length 15 x 6 mm length 14 mm; int. dia. 9 mm length 10 mm; int. dia. 6 mm 4312 020 36640 26 10 2222 852 47104 2222 030 38228 2222 852 47104 DIMENSIONS CATALOGUE NO. 2222 809 07015
9 turns enamelled 1 mm copper wire 305 nH grade 3B Ferroxcube wideband HF choke 0.25 W metal film resistor 0.25 W metal film resistor
September 1992
7
Philips Semiconductors
Product specification
HF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. MODE OF OPERATION SSB, class-AB Note f VDS (MHz) (V) 28 28 IDQ (A) 0.25 PL (W) 30 (PEP) Gp (dB) typ. 20 D (%) typ. 40 d3 (dB) (note 1) typ. -35 d5 (dB) (note 1) typ. -40
BLF145
ZL () 8.9 + j1.0
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB.
Ruggedness in class-AB operation The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W single tone under the following conditions: VDS = 28 V; f = 28 MHz; Th = 25 C; Rth mb-h = 0.3 K/W at rated load power.
handbook, halfpage
22
MGP043
handbook, halfpage
60
MGP044
Gp (dB) 20
D (%) 40
18
20
16 0 20 40 PL (W) 60
0 0 20 40 PL (W) 60
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.12 Power gain as a function of load power, typical values.
Fig.13 Two tone efficiency as a function of load power, typical values.
September 1992
8
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, full pagewidth
C4 D.U.T. C1 input 50 C2 L1 R1 C3 C6 +VG R2 L2 C5 L4 L3 L5
C7 C9 C10
output 50
C8 +VD C11 L6
MGP045
C12
f = 28 MHz.
Fig.14 Test circuit for class-AB operation.
List of components (class-AB test circuit) COMPONENT C1, C2 C3, C6 C4, C5 C7, C10 C8, C9 C11 C12 L1 L2, L3 L4 L5 L6 R1 R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 4.5), thickness 116 mm. DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor electrolytic capacitor 13 turns enamelled 0.5 mm copper wire stripline (note 2) 10 turns enamelled 1 mm copper wire VALUE 5 to 60 pF 100 nF 27 pF 39 pF 7 to 100 pF 3 x 100 nF 2.2 F, 63 V 415 nH 30 390 nH length 10 mm; int. dia. 5 mm length 15 x 6 mm length 13 mm; int. dia. 7 mm length 10 mm; int. dia. 5 mm 4312 020 36640 34 10 2222 809 07015 2222 852 47104 2222 030 38228 DIMENSIONS CATALOGUE NO. 2222 809 07011 2222 852 47104
9 turns enamelled 1 mm copper wire 245 nH grade 3B Ferroxcube wideband HF choke 0.5 W metal film resistor 0.25 W metal film resistor
September 1992
9
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, halfpage
-20
MGP046
handbook, halfpage
-20
MGP047
d3 (dB) -30
d5 (dB) -30
-40
-40
-50 0 20 40 PL (W) 60
-50 0 20 40 PL (W) 60
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.15 Third order intermodulation distortion as a function of load power, typical values.
Fig.16 Fifth order intermodulation distortion as a function of load power, typical values.
MGP048
handbook, halfpage
21
Table 1 Input impedance as a function of frequency Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; ZL = 8.9 + j1 . f (MHz) 1.5 3.0 6.0 10 15 20 25 Zi () 32.9 - j2.2 32.4 - j4.3 30.7 - j8.1 27.4 - j11.9 32.9 - j14.6 18.5 - j15.4 15.1 - j15.3 12.5 - j14.6
Gp (dB)
20
19 0 6 12 18 24 30 f (MHz)
30
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; ZL = 8.9 + j1 .
Fig.17 Power gain as a function of frequency, typical values.
September 1992
10
Philips Semiconductors
Product specification
HF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF145
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
HF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF145
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

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