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| BLX92A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX92A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V PACKAGE STYLE .280 4L STUD A 45 C FEATURES: * High Gain - 11.0 dB Min. * OmnigoldTM Metallization System B E B D C E J E F I MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC 0.7 A 65 V 6.0 W @ TC = 25 C -65 to +200 C -65 to +150 C 9.8 C/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO hFE fT Cc Ce PG C IC = 10 mA IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 5.0 V VCE = 5.0 V VCB = 10 V VEB = 0 V VCE = 28 V TC = 25 C NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 33 4.0 UNITS V V V V --- IC = 100 mA IC = 100 mA f = 1.0 MHz f = 1.0 MHz POUT = 2.5 W f = 470 MHz 10 1.2 6.5 25 11 60 GHz pF pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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