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| Preliminary data BSO 615N SIPMOS (R) Small-Signal Transistor * Dual N-channel * Enhancement mode * Logic Level * Avalanche rated * VGS(th) = 1.2 ...2.0 V Type BSO 615N VDS 60 V ID 2.6 A RDS(on) 0.15 Package Marking P-DSO-8 Ordering Code Q 67000-S. . . Electrical Characteristics, at Tj = 25C, unless otherwise specified Maximum Ratings Parameter Continuous drain current, one channel active Symbol Values 2.6 Unit A ID IDpuls 10.4 TA = 25 C Pulsed drain current, one channel active TA = 25 C Avalanche energy, single pulse EAS 60 mJ ID = 2.6 A, VDD = 25 V, RGS = 25 L = 10 mH, Tj = 25 C Avalanche current, repetitive,limited by Tj(max) Avalanche energy, periodic limited by Tj(max) Reverse diode dv/dt IAR EAR dv/dt 2.6 2 A mJ KV/s IS = 2.6 A, VDS = 40 V, di/dt = 200 A/s Tjmax = 150 C Gate source voltage Power dissipation, one channel avtive 6 VGS Ptot 14 2 V W TA = 25 C Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg -55 ... + 150 -55 ... + 150 55 / 150 / 56 C 1 23/09/1997 Preliminary data BSO 615N Thermal Characteristics Parameter Symbol min. Thermal resistance, junction-soldering point 1)2) Thermal resistance, chip to ambient 1)2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm * 50mm *1.5mm epoxy PCB FR4 with 6 cm2 copper area around the heat slug footprint(one layer, 70 m copper). PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.6 0.1 10 0.12 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 20 A Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 60 V, VGS = 0 V, Tj = -40 C VDS = 60 V, VGS = 0 V, Tj = 25 C VDS = 60 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS 100 nA 0.15 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 4.5 V, ID = 2.6 A Semiconductor Group 2 23/09/1997 Preliminary data BSO 615N Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 2.4 5.6 300 90 50 - S pF 380 120 65 ns 12 20 VDS 2 * ID * RDS(on)max, ID = 2.6 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16.3 Rise time tr 15 25 VDD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16.3 Turn-off delay time td(off) 20 30 VDD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16.3 Fall time tf 15 0.4 7 14 3.6 25 nC 0.6 10 20 V - VDD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16.3 Gate charge at threshold Qg(th) Qg(5) - VDD = 40 V, ID 0.1 A, VGS 0 to 1 V Gate Charge at 5.0 V VDD = 40 V, ID = 2.6 A, VGS 0 to 5 V Gate Charge total Qg(total) - VDD = 40 V, ID = 2.6 A, VGS 0 to 10 V Gate plateau voltage V(plateau) VDS = 40 V, ID = 2.6 A Semiconductor Group 3 23/09/1997 Preliminary data BSO 615N Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed A 0.95 50 0.1 2.6 10.4 V 1.2 ns 75 C 0.15 ISM VSD trr Qrr TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = 5.2 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 23/09/1997 Preliminary data BSO 615N Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 4 V 2.8 A 2.4 2.0 W Ptot 1.6 1.4 1.2 ID 2.2 2.0 1.8 1.6 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 TA TA Semiconductor Group 5 23/09/1997 Preliminary data BSO 615N Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 6.0 A 5.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.45 a b Ptot = 2W jg ihf e d l k VGS [V] a 2.5 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 RDS (on)0.35 0.30 0.25 0.20 c c b c d e f g h i j k 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.15 d bl 0.10 0.05 VGS [V] = a 3.0 2.5 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 f h ik g j e k 10.0 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 15 A 13 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 23/09/1997 Preliminary data BSO 615N Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 2.6 A, VGS = 4.5 V 0.38 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 20 A 4.6 V 4.0 0.32 RDS (on) 0.28 VGS(th) 3.6 3.2 0.24 0.20 0.16 0.12 0.08 2.8 98% typ 2.4 98% 2.0 typ 1.6 2% 1.2 0.8 0.04 0.00 -60 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C pF IF Ciss 10 1 10 2 Coss 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 23/09/1997 Preliminary data BSO 615N Avalanche energy EAS = (Tj) parameter: ID = 2.6 A, VDD = 25 V RGS = 25 , L = 10 mH 65 mJ 55 Typ. gate charge VGS = (QGate) parameter: ID puls = 3 A 16 V EAS 50 45 40 35 VGS 12 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 C 160 0 0 4 8 12 16 22 4 6 0,2 VDS max 0,8 VDS max 2 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 71 V V(BR)DSS 68 66 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 23/09/1997 |
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