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| Preliminary data BSO 615NV SIPMOS (R) Small-Signal Transistor * Dual N-channel * Enhancement mode * Avalanche rated * VGS(th) =2.1 ...4.0V Type BSO 615NV VDS 60 V ID 3.1 A RDS(on) 0.12 Package Marking P-DSO-8 Ordering Code Q67000-S. . . Electrical Characteristics, at Tj = 25C, unless otherwise specified Maximum Ratings Parameter Continuous drain current, one channel active Symbol Values 3.1 1.95 Unit A ID TA = 25 C TA = 100 C Pulsed drain current, one channel active IDpuls 12.4 TA = 25 C Avalanche energy, single pulse EAS 60 mJ ID = 3.1 A, VDD = 25 V, RGS = 25 L = 12.8 mH, Tj = 25 C Avalanche current, repetitive,limited by Tj(max) Avalanche energy, periodic limited by Tj(max) Reverse diode dv/dt IAR EAR dv/dt 3.1 0.2 A mJ KV/s IS = 3.1 A, VDS = 40 V, di/dt = 200 A/s Tjmax = 150 C Gate source voltage Power dissipation, one channel avtive 6 VGS Ptot 20 2 V W TA = 25 C Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg -55 ... + 150 -55 ... + 150 55 / 150 / 56 C 1 31/10/1997 Preliminary data BSO 615NV Thermal Characteristics Parameter Symbol min. Thermal resistance, junction-soldering point 1)2) Thermal resistance, chip to ambient 1)2) Values typ. tbd 62.5 max. K/W Unit RthJS RthJA - 1) Device on 50mm * 50mm *1.5mm epoxy PCB FR4 with 6 cm2 copper area around the heat slug footprint(one layer, 70 m copper). PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 3 0.1 10 0.09 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 0.02 mA Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 60 V, VGS = 0 V, Tj = -40 C VDS = 60 V, VGS = 0 V, Tj = 25 C VDS = 60 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.12 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 3.1 A Semiconductor Group 2 31/10/1997 Preliminary data BSO 615NV Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 2.5 275 90 50 - S pF 340 115 60 ns 11 17 VDS 2 * ID * RDS(on)max, ID = 3.1 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3.1 A RG = 32.6 Rise time tr 24 36 VDD = 30 V, VGS = 10 V, ID = 3.1 A RG = 32.6 Turn-off delay time td(off) 25 38 VDD = 30 V, VGS = 10 V, ID = 3.1 A RG = 32.6 Fall time tf 35 0.24 7.4 9.7 4.7 53 nC Qg(7) 9.3 12 V 3 31/10/1997 0.3 VDD = 30 V, VGS = 10 V, ID = 3.1 A RG = 32.6 Gate charge at threshold Qg(th) VDD = 40 V, ID = 0.1 A, VGS 0 to 1 V Gate Charge at 7.0 V VDD = 40 V, ID = 3.1 A, VGS 0 to 7 V Gate Charge total Qg(total) - VDD = 40 V, ID = 3.1 A, VGS 0 to 10 V Gate plateau voltage V(plateau) VDS = 15 V, ID = 3.1 A Semiconductor Group Preliminary data BSO 615NV Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current IS A 1 45 0.08 3.1 12.4 V 1.2 ns 56 C 0.12 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 6.2 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 31/10/1997 Preliminary data BSO 615NV Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 3.2 2.4 W A 2.0 Ptot 1.8 1.6 ID 2.4 2.0 1.4 1.2 1.0 1.2 0.8 0.6 0.4 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0.0 0 20 40 60 80 100 120 C 160 0.8 1.6 TA TA Semiconductor Group 5 31/10/1997 Preliminary data BSO 615NV Typ. output characteristics ID = (VDS) parameter: tp = 80 s 7.0 A 6.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.38 Ptotl = 2W k j i hg VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 0.32 RDS (on) 0.28 0.24 0.20 a b ID 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 e fc d e f g h i j k l c 0.16 d 0.12 g e f h 0.08 d 0.04 0.5 c 0.0 ab 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS [V] = a 4.5 4.0 3.5 3.0 2.5 b 5.0 c 5.5 d 6.0 e f 7.0 8.0 g h 9.0 10.0 V 5.0 0.00 0.0 1.0 2.0 3.0 4.0 A 5.5 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 14 A ID 10 8 6 4 2 0 0 1 2 3 4 5 V VGS 7 Semiconductor Group 6 31/10/1997 Preliminary data BSO 615NV Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 3.1 A, VGS = 10 V 0.32 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 0.02 mA 4.6 V 4.0 RDS (on) 0.24 VGS(th) 98% 3.6 3.2 typ 0.20 2.8 0.16 98% typ 2.4 2.0 2% 0.12 1.6 1.2 0.8 0.08 0.04 0.4 0.00 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C pF Ciss 10 1 IF 10 2 Coss 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 31/10/1997 Preliminary data BSO 615NV Avalanche energy EAS = (Tj) parameter: ID = 3.1 A, VDD = 25 V RGS = 25 , L = 12.8 mH 65 mJ 55 Typ. gate charge VGS = (QGate) parameter: ID puls = 3 A 16 V EAS 50 45 40 35 VGS 12 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 C 160 0 0 2 4 6 0,2 VDS max 0,8 VDS max 2 4 6 8 10 14 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 31/10/1997 |
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