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BSP030
N-channel enhancement mode field-effect transistor
Rev. 04 -- 26 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSP030 in SOT223.
2. Features
s s s s s TrenchMOSTM technology Fast switching Low on-state resistance Logic level compatible Surface mount package.
3. Applications
c c
s Motor and actuator driver s Battery management s High speed, low resistance switch.
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d)
03ab45
Simplified outline
4
Symbol
d
g
1
2
3
s
03ab30
SOT223
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tsp = 25 C; VGS = 4.5 V Tsp = 25 C VGS = 10 V; ID = 5 A VGS = 4.5 V; ID = 2.5 A Typ - - - - 20 30 Max 30 10 8.3 150 30 50 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tsp = 25 C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 C; VGS = 4.5 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min - - - - - - - -65 -65 - - Max 30 30 20 10 6.3 40 8.3 +150 +150 9 40 Unit V V V A A A W C C A A
Source-drain diode
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
2 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
03aa17
120
P der (%) 100
03aa25
120
Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125
Tsp
0
150 (oC)
175
0
25
50
75
100
125
150 175 Tsp (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 4.5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
102 ID (A) 10 RDSon = VDS/ ID
Fig 2. Normalized continuous drain current as a function of solder point temperature.
03ac23
tp = 10 s 100 s 1 ms
1
P
=
tp T
D.C.
10 ms 100 ms
tp
t T
10-1 10-1
Tsp = 25 C; IDM is single pulse.
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
3 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions mounted on a metal clad substrate; Figure 4 mounted on a printed circuit board; minimum footprint Value 15 100 Unit K/W K/W
7.1 Transient thermal impedance
03ac21
102 Zth(j-sp) (K/W) 10
= 0.5
0.2 0.1
1
0.05 0.02
P
=
tp T
10-1 single pulse
tp T
10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s)
t
10
Mounted on a metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
4 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 24 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 5 A; Figure 7 and 8 Tj = 25 C VGS = 5 V; ID = 2.5 A; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr ton td(off) tf toff forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-on time turn-off delay time turn-off fall time turn-off time VDD = 15 V; RD = 15 ; VGS = 10 V; RG = 6 VGS = 0 V; VDS = 24 V; f = 1 MHz; Figure 12 VDS = 5 V; ID = 5.5 A; Figure 11 ID = 5 A; VDS = 15 V; VGS = 10 V; Figure 14 - - - - - - - - - - - - - 12 24 3.3 7.4 770 265 180 8 10 18 24 20 44 - 40 - - - - - - - 35 - - 150 S nC nC nC pF pF pF ns ns ns ns ns ns - - 30 - 50 85 m m - 20 30 m - - - 10 - 10 100 10 100 nA A nA 1 0.6 - 2 - - 2.8 - 3.5 V V V 30 27 43 - - - V V Min Typ Max Unit Static characteristics
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
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Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 1.25 A; VGS = 0 V; Figure 13 IS = 1.25 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V Min - - - Typ 0.73 120 150 Max 1.0 - - Unit V ns nC Source-drain diode
20 ID 18 (A) 16 14 12 10 8 6 4 2 0
03ac25
10 V
VGS = 5 V
Tj = 25oC
20 ID (A) 18 16 14 12 10 8 6 4 2 0
03ac27
VDS > ID X RDSon
3.4 V 3.2 V 3V 2.8 V 2.6 V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS (V)
150oC
Tj = 25oC
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS (V)
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
0.2
03ac26
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa27
RDSon () 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0
2.8V 3 V 3.2 V
3.4 V
Tj = 25oC
a
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
5V VGS = 10V 2 4 6 8 10 12 14 16 18 20 ID (A)
0.4 0.2 0 -60 -20 20 60 100 140 Tj (oC) 180
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
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Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
3
VGS(th) (V) 2.5 typ
03aa34
10-1 I D
(A) 10-2
03aa37
2
10-3
min
typ
1.5
min
10-4
1
10-5
0.5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5 3 VGS (V)
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
16 gfs (S) 14 12 10 8 6 4 2 0 0 2 4 6 8 VDS > ID X RDSon 10 12 14 16 18 20 ID (A) Tj = 25oC
03ac28
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
03ac30
104
150oC
Ciss, Coss, Crss (pF)
103 Ciss
Coss 102 10-1 1 10 VDS (V) Crss 102
Tj = 25 C and 150 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
7 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
20 IS (A) 18 16 14 12 10 8 6 4 2 0 0
03ac29
03ac31
VGS = 0 V
15 VGS 14 (V) 13 12 11 10
ID = 5 A VDS = 15 V Tj = 25oC
150oC Tj = 25oC
9 8 7 6 5 4 3 2 1 0
0.2
0.4
0.6
0.8
1 1.2 VSD (V)
0
5
10
15
20
25
30 QG (nC)
35
Tj = 25 C and 150 C; VGS = 0 V
ID = 5 A; VDS = 15 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
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Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
Fig 15. SOT223.
9397 750 07268 (c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
9 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 04 03 02 01 Revision history CPCN HZG336 Description Product specification; fourth version; supersedes BSP030_3 of 970313. Converted from VDMOS (Nijmegen) to TrenchMOSTM technology (Hazel Grove). 19970313 19970120 19961111 Product specification; third version; supersedes BSP030_2 of 970120. Product specification; second version; supersedes BSP030_1 of 961111. Product specification; initial version.
Rev Date 20000726
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
10 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07268
(c) Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
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Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
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(SCA70)
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
12 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 July 2000 Document order number: 9397 750 07268

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