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| BUF653 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 11 11 16.5 5.5 8 70 150 -65 to +150 Unit V V V V A A A A W C C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase 25C Maximum Thermal Resistance Tcase = 25C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.78 Unit K/W Document Number 86515 Rev. 1, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (8) BUF653 Vishay Telefunken Electrical Characteristics Tcase = 25C, unless otherwise specified Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150C Collector-emitter breakdown IC = 300 mA; L = 125 mH; voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter IC = 1.8 A; IB = 0.5 A saturation voltage IC = 5.5 A; IB = 1.8 A Base-emitter saturation voltage IC = 1.8 A; IB = 0.5 A g IC = 5.5 A; IB = 1.8 A DC forward current transfer ratio VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1.8 A VCE = 2 V; IC = 5.5 A VCE = 5 V; IC = 11 A Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 11 A; IB1 = 3.7 A; -IB2 = 1.1 A; -VBB = 5 V Dynamic saturation voltage y g IC = 5.5 A; IB = 1.1 A; t = 1 ms IC = 5.5 A; IB = 1.1 A; t = 3 ms Gain bandwidth product IC = 500 mA; VCE = 10 V; f = 1 MHz Parameter Collector cut-off current Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW VCEsatdyn VCEsatdyn fT Min Typ Max 50 0.5 Unit mA mA V V V V V V 400 11 0.2 0.4 0.9 1.1 25 25 10 4 0.3 0.6 1.1 1.2 15 15 6 500 V 8 2 4 13 3 V V MHz www.vishay.de * FaxBack +1-408-970-5600 2 (8) Document Number 86515 Rev. 1, 20-Jan-99 BUF653 Vishay Telefunken Switching Characteristics Tcase = 25C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 1.8 A; IB1 = 0.5 A; -IB2 = 0.9 A; VS = 250 V Storage time Fall time Turn on time IC = 5.5 A; IB1 = 1.1 A; -IB2 = 2.8 A; VS = 250 V Storage time Fall time Inductive load (figure 3) Storage time IC = 1.8 A; IB1 = 0.5 A; -IB2 = 0.9 A; Vclamp = 300 V; L = 200 mH Fall time Storage time IC = 5.5 A; IB1 = 1.1 A; -IB2 = 2.8 A; Vclamp = 300 V; L = 200 mH Fall time Symbol ton ts tf ton ts tf ts tf ts tf Min Typ 0.15 2.9 0.3 0.5 1.3 0.1 3 0.1 1.4 0.06 Max 0.25 3.6 0.4 0.7 1.7 0.15 3.8 0.2 1.8 0.1 Unit ms ms ms ms ms ms ms ms ms ms 94 8863 V S2 + 10 V IB IC w Imeasure IC 5 IC V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses + LC VCE V(BR)CEO 100 mW + 0.1 + 10 ms I(BR)R Figure 1. Test circuit for V(BR)CE0 Document Number 86515 Rev. 1, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (8) BUF653 Vishay Telefunken 94 8852 IB IB1 0 t RC -IB2 IC (1) IB1 RB VBB + VCE IB VCC IC 0.9 IC 0.1 IC tr td ton t ts toff tf (1) Fast electronic switch Figure 2. Test circuit for switching characteristics - resistive load 94 8853 IB IB1 LC 0 -IB2 IC (1) IB1 RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC t + (1) Fast electronic switch (2) Fast recovery rectifier 0.1 IC t ts tr Figure 3. Test circuit for switching characteristics - inductive load www.vishay.de * FaxBack +1-408-970-5600 4 (8) Document Number 86515 Rev. 1, 20-Jan-99 BUF653 Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 13676 100.00 Ptot - Total Power Dissipation ( W ) 1.78K/W 10.00 12.5K/W I C - Collector Current ( A ) 0.1 x IC < IB2 < 0.5 x IC VCEsat < 2 V 1.00 25K/W 50K/W 0.10 RthJA=85K/W 0.01 100 200 300 400 500 600 13677 0 25 50 75 100 125 150 VCE - Collector Emitter Voltage ( V ) Tcase - Case Temperature ( C ) Figure 4. VCEW - Diagram 10 9 IC - Collector Current ( A ) 8 7 6 5 4 3 2 1 0 0 13678 Figure 7. Ptot vs.Tcase V CEsat - Collector Emitter Saturation Voltage ( V ) 10.00 IC=1A 2A 4A 6A 8A 1A 0.8A 0.6A 0.4A 0.2A IB=0.1A 1.00 0.10 1 2 3 4 5 6 7 8 9 10 0.01 0.01 0.10 1.00 10.00 VCE - Collector Emitter Voltage ( V ) 13679 IB - Base Current ( A ) Figure 5. IC vs. VCE 100 100 Figure 8. VCEsat vs. IB h FE - Forward DC Current Transfer Ratio h FE - Forward DC Current Transfer Ratio Tj = 125C 75C 10 25C 10 10V 5V VCE=2V 1 0.01 0.10 1.00 10.00 100.00 VCE=2V 1 0.01 0.10 1.00 10.00 100.00 13680 IC - Collector Current ( A ) 13681 IC - Collector Current ( A ) Figure 6. hFE vs. IC Figure 9. hFE vs. IC Document Number 86515 Rev. 1, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (8) BUF653 Vishay Telefunken 10 8 t s - Storage Time ( m s ) 6 4 Tcase = 125C 2 Tcase = 25C 0 0 13682 0.5 saturated switching R-load IC = 1.8A, IB1 = 0.25A 0.4 t f - Fall Time ( ms ) 0.3 Tcase = 125C 0.2 0.1 Tcase = 25C 0 1 2 3 -IB2/IB1 4 5 6 13683 saturated switching R-load IC = 1.8A, IB1 = 0.25A 0 1 2 3 -IB2/IB1 4 5 6 Figure 10. ts vs. -IB2/IB1 10 8 t s - Storage Time ( m s ) 6 4 Tcase = 125C 2 Tcase = 25C 0 0 13684 Figure 12. tf vs. -IB2/IB1 0.6 t f - Fall Time ( ms ) saturated switching R-load IC = 1.8A, IB1 = 0.45A 0.5 0.4 saturated switching R-load IC = 1.8A, IB1 = 0.45A Tcase = 125C 0.3 0.2 0.1 0 Tcase = 25C 1 2 -IB2/IB1 3 4 13685 0 1 2 -IB2/IB1 3 4 Figure 11. ts vs. -IB2/IB1 Figure 13. tf vs. -IB2/IB1 www.vishay.de * FaxBack +1-408-970-5600 6 (8) Document Number 86515 Rev. 1, 20-Jan-99 BUF653 Vishay Telefunken Dimensions in mm 0.52 0.40 4.8 4.4 2.70 2.35 1.40 1.27 1.3 1.0 0.85 0.65 1.5 0.9 E 10.4 9.8 3.8 3.5 C 2.64 2.44 B 1.5 1.2 2.9 2.7 6.7 5.8 4.8 4.3 13.6 12.2 16.0 15.2 Standard Plastic Case 14A 3 DIN 41 869 JEDEC TO 220 94 9184 technical drawings according to DIN specifications Collector connected with metallic surface Document Number 86515 Rev. 1, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (8) BUF653 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 8 (8) Document Number 86515 Rev. 1, 20-Jan-99 |
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