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Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance
BY229 series
SYMBOL
QUICK REFERENCE DATA
VR = 200 V/ 400 V/ 600 V/800 V IF(AV) = 8 A IFSM 60 A trr 135 ns
k 1
a 2
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY229 series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM VR IF(AV) PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; = 0.5; Tmb 122 C sinusoidal; a = 1.57; Tmb 125 C CONDITIONS BY229 MIN. -200 200 200 150 150 MAX. -400 400 400 300 300 8 7 11 16 60 66 -600 600 600 500 500 -800 800 800 600 600 UNIT V V V V A A A A A A
IF(RMS) IFRM IFSM
I2t Tstg Tj
RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Tmb 122 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature
-40 -
18 150 150
A2s C C
1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. -
BY229 series
TYP. 60
MAX. 2.0 -
UNIT K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A VR = VRWM; Tj = 125 C MIN. TYP. 1.5 0.1 MAX. 1.85 0.4 UNIT V mA
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL trr Qs dIR/dt PARAMETER Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current CONDITIONS IF = 1 A; VR > 30 V; -dIF/dt = 50 A/s IF = 2 A; VR > 30 V; -dIF/dt = 20 A/s IF = 2 A; -dIF/dt = 20 A/s MIN. TYP. 100 0.5 50 MAX. 135 0.7 60 UNIT ns C A/s
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY229 series
I
dI F dt
F
80 70
IFS(RMS) / A
BY229
IFSM
trr time
60 50 40 30
Qs
25%
100%
20 10
I
R
I
rrm
0 1ms 10ms 0.1s tp / s 1s 10s
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM.
IF / A Tj = 150 C Tj = 25 C BY229F
20
PF / W
Vo = 1.25 V Rs = 0.03 Ohms
BY329
Tmb(max) / C 110 D = 1.0 120
30
15
0.5 0.2 0.1
I tp
20
10
130
tp T t
5
T
D=
10
140
typ
max
0 0 2 4 6 IF(AV) / A 8 10
150 12
0 0 0.5 1 VF / V
1.5
2
Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.
BY329 Tmb(max) / C a = 1.57 1.9 10 4 5 140 2.2 2.8 130
Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj
15
PF / W
Vo = 1.25 V Rs = 0.03 Ohms
120
10
Qs / uC Tj = 150 C Tj = 25 C
BY329
IF = 10 A 10 A 2A 1 1A 2A 1A
0 0 2 4 IF(AV) / A 6
150 8
0.1 1
10 -dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV).
Fig.6. Maximum Qs at Tj = 25C and 150C
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
BY229 series
1000
trr / ns
BY329 IF = 10 A 10A 1A 1A
10
Transient thermal impedance, Zth j-mb (K/W)
1
100
0.1
0.01
P D
tp
D=
Tj = 150 C Tj = 25 C 10 1 10 -dIF/dt (A/us) 100
0.001 1us
T
tp T t
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229
10s
Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25C and 150C
Fig.9. Transient thermal impedance Zth = f(tp)
100
Cd / pF
BY329
10
1 1
10
VR / V 100
1000
Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25C
September 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BY229 series
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
3,0 max not tinned 3,0
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes fast, soft-recovery
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BY229 series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1998
6
Rev 1.200

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