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Datasheet File OCR Text: |
BYT86/1300 Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very good reverse current stability at high temperature 94 9537 D Low thermal resistance Applications Fast rectifiers in S.M.P.S Freewheeling diodes and snubber diodes in motor control circuits Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage, repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR=VRRM IFSM IFRM IFAV Tj Tstg Value 1300 50 15 5 150 -40...+150 Unit V A A A C C tp=10ms Maximum Thermal Resistance Tj = 25_C Parameter Junction case Junction ambient Test Conditions Symbol RthJC RthJA Value 2.4 85 Unit K/W K/W TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (4) BYT86/1300 Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Forward recovery time Turn on transient peak voltage Reverse recovery time Test Conditions IF=5A IF=5A, Tj=100C VR=VRRM VR=VRRM, Tj=100C IF=5A, diF/dtx50A/ms IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR tfr VFP trr Min Typ Max 1.8 1.8 10 0.2 Unit V V mA mA ns V ns 350 7 150 Typical Characteristics (Tj = 25_C unless otherwise specified) 95 9666 VF VFP 110% 100% t tfr Figure 1. Turn on transient peak voltage 2 (4) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 BYT86/1300 Dimensions in mm 0.53 0.47 4.8 2.45 1.35 1.05 A 0.85 0.65 10.0 max. 3.5 5.08 C 2.9 technical drawings according to DIN specifications 1.25 4.7 5.8 16.0 12.2 94 9536 Cathode connected with metallic surface , Plastic Case DO 220 , Weight max.: 2.5 g TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 3 (4) BYT86/1300 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 |
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