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| BYV28-600 Vishay Telefunken Ultra Fast Soft-Recovery Avalanche Rectifier Features D Glass passivated D Hermetically sealed axial-leaded glass envelope D Low reverse current D Ultra fast soft recovery switching Applications TV SMPS Power feedback systems 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage =Repetitive peak reverse voltage Peak forward surge current Average forward current Non-repetitive reverse avalanche energy Junction and storage temperature range Test Conditions Type Symbol VR=VRRM IFSM IFAV ER Tj=Tstg Value 600 90 3.5 20 -55...+175 Unit V A A mWs tp=10ms, half-sinewave Inductive load, I(BR)R=400mA C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions lead length l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 25 70 Unit K/W K/W Rev. A2, 24-Jun-98 1 (4) BYV28-600 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=3.5A IF=5A IF=3.5A, Tj=175C IF=5A, Tj=175C VR=VRRM VR=VRRM, Tj=150C IR=100mA IF=0.5A, IR=1A, iR=0.25A IF=5A Type Symbol VF VF VF VF IR IR V(BR)R trr VFP tfr Min Typ Max 1.25 1.35 0.95 1.06 5 150 50 6.2 210 Unit V V V V Reverse current Reverse breakdown voltage Reverse recovery time Forward recovery Forward recovery time mA mA V ns V ns 600 Characteristics (Tj = 25_C unless otherwise specified) 300 PR - Reverse Power Dissipation ( mW ) RthJA= 250 200 150 100 50 0 25 14365 1000 VR = VRRM I R - Reverse Current ( mA ) VR = VRRM 25K/W 70K/W PR-Limit @100%VR 100 PR-Limit @80%VR 10 1 50 75 100 125 150 175 14366 25 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Tj - Junction Temperature ( C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 2. Max. Reverse Current vs. Junction Temperature 2 (4) Rev. A2, 24-Jun-98 BYV28-600 Vishay Telefunken 4.0 I FAV- Average Forward Current ( A ) CD - Diode Capacitance ( pF ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 14364 160 VR = VR RM half sinewave RthJA l=10mm v25K/W 140 120 100 80 60 40 20 0 0.1 f=1MHz RthJA PCB: d=25mm 20 40 60 v70K/W 80 100 120 140 160 180 1.0 10.0 100.0 Tamb - Ambient Temperature ( C ) 14367 VR - Reverse Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 100 Tj = 175C IF - Forward Current ( A ) 10 1 0.1 0.01 Figure 5. Typ. Diode Capacitance vs. Reverse Voltage Tj = 25C 0.001 0 14363 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage ( V ) Figure 4. Max. Forward Current vs. Forward Voltage Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Rev. A2, 24-Jun-98 3 (4) BYV28-600 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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