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| CSY 240 GaAs MMIC Preliminary Data l l l l l l l Vc2 4 TX/RX- and diversity switch for mobile communications and 2.45GHz WLAN applications Low insertion loss High TX/RX isolation Frequency range 0.5 - 3.0 GHz High input power capability Very low rise / fall time Miniature package MW6 based on SOT23 ANT 6 GND 5 1 Rx/Vc1 2 GND 3 Tx ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CSY 240 S1 Q62702-S2000 MW-6 Switch Control Vc2 [4] CSY240 Tx [3] Antenna [6] Rx/Vc1 [1] GND [2; 5] Maximum ratings Characteristics Control voltage range Channel temperature Storage temperature range Total power dissipation (TS < tbdC) 2) Symbol Unit 0....-7 150 -55...+150 tbd. V C C mW Vc1 / Vc2 TCh Tstg Ptot Siemens Aktiengesellschaft Semiconductor Group 1 1 20.07.1998 HL HF 1998-11-01 PE GaAs1 CSY 240 Thermal resistance Characteristics Channel-soldering point (GND) Channel-ambient 3) Symbol Unit < tbd. < tbd. K/W K/W RthChS RthChA 1) 2) 3) Dimensions see page 5. Please care for sufficient heat dissipation on the pcb! Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Electrical characteristics TA = 25C RS = RL = 50 Characteristics Control current Vc = -5V PIN = 10dBm unless otherwise specified min typ 20 max Unit A dB Symbol Ic ILTx Insertion Loss Tx - Path Vc1 = 0V; Vc2 = -5V; f = 900MHz f = 1.8GHz f = 2.5GHz Insertion Loss Rx - Path Vc1 = -5V; Vc2 = 0V; f = 900MHz f = 1.8GHz f = 2.5GHz Input- / Output return loss Tx - Path Vc1 = 0V; Vc2 = -5V; f = 900MHz f = 1.8GHz f = 2.5GHz Input- / Output return loss Rx - Path Vc1 = -5V; Vc2 = 0V; f = 900MHz f = 1.8GHz f = 2.5GHz Tx- /Rx - Isolation1) Vc1 = 0V; Vc2 = -5V; f = 900MHz f = 1.8GHz f = 2.5GHz - 0.3 0.5 0.7 - ILRx - 0.35 0.55 0.8 - dB RLTx - 20 20 15 - dB RLRx - 16 17 14 - dB ISOTxRx - 28 22 19 - dB Siemens Aktiengesellschaft Semiconductor Group 2 2 20.07.1998 HL HF 1998-11-01 PE GaAs1 CSY 240 Characteristics Ant / Rx - Isolation1) Vc1 = 0V; Vc2 = -5V; f = 900MHz f = 1.8GHz f = 2.5GHz Tx- / Ant- Isolation1) Vc1 = -5V; Vc2 = 0V; f = 900MHz f = 1.8GHz f = 2.5GHz Output power at 1dB gain compression (Tx- Path) Vc1 = 0V; Vc2 = -5V; f = 900MHz 1) See page 4 for definition Characteristics Input Power at 1dB gain compression (Rx - Path) Vc1 = -5V; Vc2 = 0V f = 900MHz Third order output intercept point (Tx - path) two-tone intermodulation test Vc1 = 0V; Vc2 = -5V Third order input intercept point (Rx - path) two-tone intermodulation test Vc1 = -5V; Vc2 = 0V Symbol min - typ 28 22 19 max - Unit dB ISOAntRx ISOTxAnt - 29 24 19 - dB P-1dB - 30 - dBm Symbol min - typ 31.5 max - Unit dBm P-1dBin IP3 dBm tbd. dBm tbd. - IP3in Siemens Aktiengesellschaft Semiconductor Group 3 3 20.07.1998 HL HF 1998-11-01 PE GaAs1 CSY 240 Test and application circuit: Switch Control Vc2 [4] Tx 22 pF Tx [3] CSY240 Antenna [6] Rx Rx/Vc1[1] 22pF 22pF 1K GND [2; 5] Ant Vc1 Layout of application board: Vc2 Tx 22pF ANT 22pF 22pF Rx Vc1 1k actual size PCB - data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH r = 2.45 thickness = 0.4mm Siemens Aktiengesellschaft Semiconductor Group 4 4 20.07.1998 HL HF 1998-11-01 PE GaAs1 CSY 240 Test - conditions for isolation measurements: Switch Control Vc2 [4] Tx [3] Pin CSY240 Antenna [6] Rx/Vc1[1] Pout 50 GND [2; 5] Tx / Rx Isolation Switch Control Vc2 [4] 50 Tx [3] CSY240 Antenna [6] Pin Rx/Vc1[1] Pout GND [2; 5] Ant / Rx Isolation Switch Control Vc2 [4] Tx [3] Pin CSY240 Antenna [6] Rx/Vc1[1] Pout 50 GND [2; 5] Tx / Ant Isolation Siemens Aktiengesellschaft Semiconductor Group 5 5 20.07.1998 HL HF 1998-11-01 PE GaAs1 CSY 240 Semiconductor Device Outline MW-6 Dim. A A1 A2 b b1 c D E |e| |e1| HE LE a q min. nom. max. 1.1 0.1 1.0 Gradient Remark 0.3 0.6 0.08 2.8 1.2 0.95 1.9 2.6 0.6 max 10 2...30 1 0.15 3.0 1.4 1. Applicable on all case top sides Siemens Aktiengesellschaft Semiconductor Group 6 6 20.07.1998 HL HF 1998-11-01 PE GaAs1 CSY 240 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstrae 73, D-81541 Munchen. copyright Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 7 7 20.07.1998 HL HF 1998-11-01 PE GaAs1 |
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