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| HN1K04FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Analog Switch Applications * * * * High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of a compact package. Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 50 10 50 200 150 -55 to 150 Unit V V mA mW C C Note: TOTAL rating 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-06-16 1/4 HN1K04FU Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 A, VGS = 0 V VDS = 50V, VGS = 0 V VDS = 5V, ID = 0.1 mA VDS = 5V, ID = 10 mA ID = 10 mA, VGS = 4.0 V VDS = 5 V, VGS=0 V, f = 1 MHz VDS = 5 V, VGS=0 V, f = 1 MHz VDS = 5 V, VGS=0 V, f = 1 MHz VDD = 5 V, ID = 10 mA, VGS = 0 to 4.0 V VDD = 5 V, ID = 10 mA, VGS = 0 to 4.0 V Min 50 0.8 20 Typ. 20 6.3 1.3 5.7 0.11 0.15 Max 1 1 2.5 50 s Unit A V A V mS pF pF pF Equivalent Circuit (top view) 6 5 4 Marking 6 5 4 Q1 Q2 KH 1 (Q1, Q2 common) 2 3 1 2 3 Switching Time Test Circuit (a) Test circuit ID 4V IN 50 RL OUT VDD = 5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C (b) VIN VGS 4V 90% 0 VDD 10% 10% 90% tr ton toff tf 10 s VIN (c) VOUT VDS VDS (ON) VDD 2000-06-16 2/4 HN1K04FU (Q1, Q2 common) ID - VDS 60 Common source 3.0 1.2 4.0 2.0 1.0 ID - VDS (low voltage region) Common source 1.7 Ta = 25C (mA) (mA) 50 4.0 Ta = 25C 1.8 0.8 40 2.7 ID ID 1.65 0.6 VGS = 1.6 V 0.4 1.55 0.2 1.5 Drain current 2.4 20 VGS = 2.1 V 10 1.8 0 2 4 6 8 1.5 10 12 Drain current 30 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) IDR - VDS 50 30 Common source VGS = 0 Ta = 25C 50 30 10 5 3 ID - VGS Ta = 100C Common source VDS = 5 V (mA) IDR 5 3 D G IDR S Drain reverse current 0.5 0.3 0.1 0.05 0.03 0.01 0 Drain current 1 ID 1 0.5 0.3 0.1 0.05 0.03 0.01 0 (mA) 10 25 -25 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 1 2 3 4 5 6 7 8 9 Drain-source voltage VDS (V) Drain-source voltage VGS (V) Yfs - ID 100 Common 50 source 100 50 C - VDS Common source VGS = 0 f = 1 MHz Ta = 25C 10 Ciss 5 3 Coss 1 0.5 Crss Forward transfer admittance Yfs (mS) 30 10 5 3 0.5 Capacitance 1 3 5 10 30 50 100 C (pF) VDS = 5 V Ta = 25C 30 0.3 0.1 0.3 0.5 1 3 5 10 30 50 Drain current ID (mA) Drain-source voltage VDS (V) 2000-06-16 3/4 HN1K04FU (Q1, Q2 common) VDS (ON) - ID 3000 Common 1000 source 1000 t - ID Drain-source on voltage VDS (ON) (mV) (ns) VGS = 4 V 500 300 Ta = 25C 300 toff tf ton Switching time t 100 tr 100 50 30 30 4 V 0 10 s 10 0.3 VIN ID VOUT VIN 50 RL 10 5 0.5 D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source VDD = 5 V Ta = 25C 10 50 1 3 10 30 100 1 Drain current ID (mA) Drain current ID (mA) PD* - Ta 350 300 Drain power dissipation PD* (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) *: TOTAL rating 2000-06-16 4/4 |
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