 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDP7045L/FDB7045L January 2000 FDP7045L/FDB7045L General Description N-Channel Logic Level PowerTrench(R) MOSFET Features 100 A, 30 V. RDS(ON) = 0.0045 W @ VGS = 10 V RDS(ON) = 0.006 W @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance PowerTrench technology for extremely low RDS(ON). 175C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current TC = 25C unless otherwise noted Parameter FDP7045L 30 20 FDB7045L Units V V A - Continuous - Pulsed (Note 1) (Note 1) 100 75 300 125 0.85 -65 to +175 PD TJ, TSTG RJC RJA Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range W W/C C C/W C/W Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.2 62.5 Package Outlines and Ordering Information Device Marking FDB7045L FDP7045L a1999 Fairchild Semiconductor Corporation Device FDB7045L FDP7045L Reel Size 13'' Tube Tape Width 24mm N/A Quantity 800 45 FDP7045L/FDB7045L Rev.C FDP7045L/FDB7045L Electrical Characteristics Symbol BVDSS BVDSS T J IDSS IGSSF IGSSR TC = 25C unless otherwise noted Parameter Test Conditions Min 30 Typ Max Units V Off Characteristics Drain-Source Breakdown VGS = 0 V, ID = 250 A Voltage Breakdown Voltage Temperature ID = 250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) 22 1 100 -100 mV/C A nA nA VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics VGS(th) VGS(th) T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = -250 A, Referenced to 25C VGS = 10 V, ID = 50 A, VGS = 10 V, ID = 50 A, TJ=125C VGS = 4.5 V,ID = 40 A VGS = 10 V, VDS = 10 V VDS = 5 V, ID = 50 A 1 1.5 -5 0.0039 0.0056 0.0048 3 V mV/C 0.0045 0.0070 0.0060 ID(on) gFS 50 120 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, VGS = 0 V, f = 1.0 MHz 5400 1170 530 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 50 A, VGS = 10 V 14 114 105 115 30 160 150 160 70 ns ns ns ns nC nC nC VDS = 15 V, ID = 50 A, VGS = 5 V 50 16 16 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage V = 0 V, I = 50 A (Note 2) (Note 2) 75 0.95 1.2 A V Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% FDP7045L/FDB7045L Rev.C FDP7045L/FDB7045L Typical Characteristics 80 3.5V 3.0V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V ID, DRAIN-SOURCE CURRENT (A) 2 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 7.0V 10V 60 V GS = 3.0V 40 2.5V 20 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0 20 40 ID , DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.014 RDS(ON), ON-RESISTANCE (OHM) ID = 38A 0.012 0.01 0.008 TA = 125oC 0.006 0.004 0.002 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 50A VGS = 10V TA = 25oC 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 50 ID, DRAIN CURRENT (A) 40 30 20 TA = 125oC 10 0 1 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 25oC -55oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7045L/FDB7045L Rev.C FDP7045L/FDB7045L Typical Characteristics 10 ID = 50A 8 (continued) 7000 VDS = 5V 10V 15V 6000 CISS 5000 4000 3000 2000 f = 1MHz VGS = 0 V 6 4 2 1000 0 0 20 40 60 80 100 COSS CRSS 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 1000 10s RDS(ON) LIMIT 100 100s 1ms 10ms 100ms 5000 SINGLE PULSE 4000 RJC = 1.2 C/W TC = 25 C 3000 o o 2000 10 VGS = 10V SINGLE PULSE RJC = 1.2 C/W TC = 25 C 1 0.1 1 10 100 o o 1000 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.3 0.2 0.1 0.05 D = 0.5 0.2 0.1 R JC (t) = r(t) * RJC R JC = 1.2 C/W P(pk) 0.05 0.02 t1 0.03 0.02 t2 0.01 Single Pulse TJ - TC = P * RJC (t) Duty Cycle, D = t 1 / t 2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 0.01 0.01 0.05 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDP7045L/FDB7045L Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
Price & Availability of FDB7045L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |