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| ADE-208-111C(Z) HSM126S Silicon Schottky Barrier Diode for System Protection Rev. 3 May. 1995 Features * HSM126S which is connected in series configuration enable to protect electric systems from miss-operation against external + and - surge. * Low VF and low leakage current. * MPAK package is suitable for high density surface mounting and high speed assembly. Pin Arrangement 3 2 1 (Top View) Ordering Information Type No. HSM126S Mark S14 Package Code MPAK 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25C) *** Item Repetitive peak reverse voltage Average forward current Non-Repetitive peak forward surge current Symbol VRRM Io* IFSM ** Tj Tstg Value 20 200 2 125 -55 to +125 Unit V mA A C C Junction temperature Storage temperature * Sine wave, Two device total ** 50Hz half sine wave 1 pulse *** Per one device Electrical Characteristics (Ta = 25C) * Item Reverse current Forward voltage Capacitance * Per one device Symbol Min IR VF C -- -- -- Typ -- -- 40 Max 2.0 0.35 -- Unit A V pF Test Condition VR = 5 V IF = 10 mA VR= 0 V, f = 1 MHz HSM126S 10 Pulse test 1.0 Forward current I F (A) Reverse current I R (A) 10 -2 Pulse test 10 -3 10 -1 Ta=75C 10 -2 10 -4 Ta=75C 10 -5 Ta=25C 10 -3 Ta=25C 10 -4 10 -6 10 -5 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 1.0 10 -7 0 5 15 20 25 10 Reverse voltage VR (V) 30 Fig.2 Reverse current Vs. Reverse voltage f=1MHz Pulse test 102 Capacitance C (pF) 10 1.0 10 -1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 HSM126S Example of application circuite SBD (EX. HSM126S) Vcc D1 Input R D2 + Surge Vcc 0.35V Vin IC / LSI GND GND - Surge 0.35V Built-in diode VF *= 0.7 V * Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 1.9 0.3 2.8 + 0.1 - 0.3 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 S14 1.5 0 - 0.10 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HITACHI Code MPAK(1) 1.1 - 0.1 + 0.2 JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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