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| HVB14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-484(Z) Rev 0 Features * Low forward resistance. (rf = 7.0max) * Low capacitance. (C = 0.25pF typ) * CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVB14S Laser Mark H6 Package Code CMPAK Outline HVB14S Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol VR IF Pd Tj Tstg *1 Value 50 50 100 125 -55 to +125 Unit V mA mW C C 1. Two device total. Electrical Characteristics (Ta = 25C) *2 Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf -- Min -- -- -- -- 200 Typ -- -- 0.25 -- -- Max 1.0 100 -- 7 -- Unit V nA pF V Test Condition I F = 50 mA VR = 50V VR = 50V, f = 1 MHz I F = 10 mA, f = 100 MHz C = 200pF, Both forward and reverse direction 1 pulse Notes: 1. Failure criterion ; IR 200nA at VR =50 V 2. Per one device. 2 HVB14S Main Characteristic 3 HVB14S Package Dimensions Unit : mm 4 |
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