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| ADE-208-056E(Z) HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 5 Jun. 1993 Features * Low forward resistance. (rf =5.5 max) * MPAK package is suitable for high density surface mounting and high speed assembly. Pin Arrangement 3 2 1 Ordering Information Type No. HVM187WK Laser Mark H1 Package Code MPAK (Top View) 1 Anode 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature * Per one device Symbol VR IF Pd * Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW C C Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol Min VF IR C rf -- -- -- -- 3.5 200 Typ -- -- -- -- -- Max 1.0 100 2.4 5.5 -- Unit V nA pF V Test Condition IF = 10 mA VR = 60 V VR = 0 V , f = 1 MHz IF = 10 mA, f = 100 MHz *C=200pF, Both forward and reverse direction 1 pulse * Failure criterion ; IR 100nA at VR= 60V. HVM187WK 10 -2 10 -8 10 Forward current I F (A) -4 10 -6 Reverse current I R (A) 0.6 0.8 10 -9 10 -10 10 -8 10 10 -10 -11 10 -12 0 0.2 0.4 1.0 10 -12 0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 60 20 80 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 100 10 f=1MHz 4 f=100MHz Forward resistance r f ( ) 2 10 Capacitance C (pF) 10 3 10 2 1.0 10 10 -1 1.0 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 10 -5 10 -4 10 -3 10 -2 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current HVM187WK Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 H1 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 Anode 2 Anode 3 Cathode HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 0.3 1.1 - 0.1 + 0.2 |
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