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  Datasheet File OCR Text:
 ADE-208-351(Z)
HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb
Rev. 0 May.1995 Features
* HZM6.8WA has two devices, and can absorb external + and -surge. * MPAK Package is suitable for high density surface mounting and high speed assembly.
2
Outline
3
1
(Top View)
1 Cathode 2 Cathode 3 Anode
Ordering Information
Type No. HZM6.8WA Laser Mark 68A Package Code MPAK
Absolute Maximum Ratings (Ta = 25C)
Item Power dissipation Junction temperature Storage temperature * Two device total, See Fig. 2. Symbol p*
d
Value 200 150 -55 to +150
Unit mW C C
Tj Tstg
Electrical Characteristics (Ta = 25C)
tem Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability Symbol Min VZ IR C rd -- 6.47 -- -- -- 30 Typ -- -- -- -- -- Max 7.0 2 130 30 -- Unit V A pF KV Test Condition IZ = 5 mA, 40ms pulse VR = 3.5V VR = 0 V , f = 1 MHz IZ = 5 mA *C=150pF, R=330 Both forward and reverse direction 10 pulse
* Failure criterion ; IR 2A at VR = 3.5V.
HZM6.8WA
10
250
1.0mm
(mA)
8 Power Dissipation P d (mW)
200
Cu Foil
Zener Current I
6
150
Printed circuit board 25 x 62 x 1.6t mm Material: Glass Epoxy Resin+Cu Foil
Z
4
100
2
50
0 0 1 2 3 4 5 6 7 8 Zener Voltage VZ (V) Fig.1 Zener current Vs. Zener voltage
0 0 100 150 Ambient Temperature Ta (C) Fig.2 Power Dissipation Vs. Ambient Temperature 50 200
Nonrepetitive Surge Reverses Power PRSM (W)
10
4
PRSM t 10
3
Ta = 25C nonrepetitive
10
2
10
1.0
10
-5
10
-4
10 Time t
-3
10 (s)
-2
10
-1
1.0
Fig.3 Surge Reverse Power Ratings
0.8mm
HZM6.8WA
10 Transient Thermal Impedance Z th (C/W)
4
10
3
10
2
10
1.0
10
-2
10
-1
1.0 Time t
10 (s)
10
2
10
3
Fig.4 Transient Thermal Impedance
Package Dimensions
0.65 - 0.3
+ 0.1
Unit: mm
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
68A
1.9
0.3 2.8 + 0.1 -
+ 0.2 - 0.6
1.5
0 - 0.10
1 Cathode 2 Cathode 3 Anode
0.3
HITACHI Code MPAK(1)
1.1 - 0.1
+ 0.2
JEDEC Code EIAJ Code Weight (g)
-- SC-59A 0.011


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