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Datasheet File OCR Text: |
ADE-208-351(Z) HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Rev. 0 May.1995 Features * HZM6.8WA has two devices, and can absorb external + and -surge. * MPAK Package is suitable for high density surface mounting and high speed assembly. 2 Outline 3 1 (Top View) 1 Cathode 2 Cathode 3 Anode Ordering Information Type No. HZM6.8WA Laser Mark 68A Package Code MPAK Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature * Two device total, See Fig. 2. Symbol p* d Value 200 150 -55 to +150 Unit mW C C Tj Tstg Electrical Characteristics (Ta = 25C) tem Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability Symbol Min VZ IR C rd -- 6.47 -- -- -- 30 Typ -- -- -- -- -- Max 7.0 2 130 30 -- Unit V A pF KV Test Condition IZ = 5 mA, 40ms pulse VR = 3.5V VR = 0 V , f = 1 MHz IZ = 5 mA *C=150pF, R=330 Both forward and reverse direction 10 pulse * Failure criterion ; IR 2A at VR = 3.5V. HZM6.8WA 10 250 1.0mm (mA) 8 Power Dissipation P d (mW) 200 Cu Foil Zener Current I 6 150 Printed circuit board 25 x 62 x 1.6t mm Material: Glass Epoxy Resin+Cu Foil Z 4 100 2 50 0 0 1 2 3 4 5 6 7 8 Zener Voltage VZ (V) Fig.1 Zener current Vs. Zener voltage 0 0 100 150 Ambient Temperature Ta (C) Fig.2 Power Dissipation Vs. Ambient Temperature 50 200 Nonrepetitive Surge Reverses Power PRSM (W) 10 4 PRSM t 10 3 Ta = 25C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 Time t -3 10 (s) -2 10 -1 1.0 Fig.3 Surge Reverse Power Ratings 0.8mm HZM6.8WA 10 Transient Thermal Impedance Z th (C/W) 4 10 3 10 2 10 1.0 10 -2 10 -1 1.0 Time t 10 (s) 10 2 10 3 Fig.4 Transient Thermal Impedance Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 68A 1.9 0.3 2.8 + 0.1 - + 0.2 - 0.6 1.5 0 - 0.10 1 Cathode 2 Cathode 3 Anode 0.3 HITACHI Code MPAK(1) 1.1 - 0.1 + 0.2 JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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