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| EW IL352T PHOTOTRANSISTOR OPTOCOUPLER Preliminary Data Sheet Package Dimensions in Inches Pins 6&7 N.C 1 A2 K3 N.C 4 .230 (5.84) .224 (5.69) .017 (.43) .013 (.33) .047 (1.19) .037 (.94) .083 (2.1) .075 (1.9) .040 (1.02) .036 (.91) .050 (1.27) Typ. .016 (.41) Typ. .006 (.15) 10 Typ. All 8 sides 40 3-7 8B 7 C 6 5E .301 (7.65) .281 (7.14) FEATURES * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 2500 VRMS * High Collector-Emitter Voltage, VCEO = 30 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS* * Available in Tape and Reel (suffix T) DESCRIPTION The IL352T is an optically coupled isolator that features a high current transfer ratio, low coupling capacitance and high isolation voltage. It has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector. The component is housed in a thin line package. The coupling device is designed for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled must not exceed the maximum permissible reference voltages. Maximum Ratings Emitter Reverse Voltage .............................................. 6 V DC Forward Current .................................. 60 mA Total Power Dissipation ............................ 50 mW Derate Linearly from 25C ................. 0.66 mW/C Detector Collector-Emitter Voltage .............................. 70 V Emitter-Base Voltage ...................................... 7 V Collector Current ....................................... 50 mA Collector Current (t 1 ms) ....................... 100 mA Total Power Dissipation ........................... 150 mW Derate Linearly from 25C ................... 2.5 mW/C Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) ............. 2500 VRMS Isolation Resistance VIO=500 V, TA=25C .............................1012 VIO=500 V, TA=100C ...........................1011 Storage Temperature Range .... - 40C to +150C Ambient Temperature Range .... - 40C to + 85C Junction Temperature..................................100C Soldering Temperature (max 10 s, Dip Soldering Distance to Seating Plane 1.5 mm)......................260C *TRansparent IOn Shield N .224 (5.7) .346 (8.79) .216 (5.5) .326 (8.3) Pin One ID Characteristics (TA=25C) Emitter Forward Voltage Reverse Current Capacitance Sym VF IR CO Min. Typ. Max. 1.3 0.1 25 1.5 10 Units Condition V A pF IF=10 mA VR=6.0 V VR=0 f=1 MHz Detector Breakdown Voltage Collector-Emitter BVCEO 30 Emitter-Collector BVECO 7 Collector-Emitter Leakage ICEO 5 50 V IC=1 mA IE=100 A nA VCE=10 V IF=0 TA=25C VCE=30 V IF=0 TA=85C IC=100 A VCE=0 500 A Collector to Base Capacitance Collector-Emitter BVCBO 70 CCE 6 V pF Semiconductor Group 4-21 10.95 This document was created with FrameMaker 4.0.3 Characteristics (TA=25C) -- continued Package DC Current Transfer Ratio DC Current Transfer Ratio Sym CTR Min. Typ. Max. Units 100 % Condition IF=1 mA VCE=10 V TA=25C IF=10 mA VCE=10 V TA=-55 to 100C IF=10 mA, IC=0.5 mA Figure 3. Forward voltage versus forward current 1.4 VF - Forward Voltage - V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C Ta = 25C CTR 40 % Ta = 85C Saturation Volt- VCEage sat CollectorEmitter Coupling Capacitance Switching Time, NonSaturated CIO Ton, Toff 0.5 10 0.3 V 1 10 IF - Forward Current - mA 100 pF s f=1.0 MHz IC=2 mA RE=100 VCC=10 V RH50% Figure 4. Normalized non-saturated and saturated CTR at TA=25C versus LED current 1.5 NCTR - Normaliz ed CTR 1.0 Normalized to: Vce = 10V, IF = 10mA Ta = 25C CTRce(sat) Vce = 0.4V Figure 1. Switching waveform IF 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100 t PHL VO t PLH tS Figure 5. Normalized non-saturated and saturated CTR at TA=50C versus LED current tD tR tF NCTR - Normaliz ed CTR 50% 1.5 Normalized to: Vce = 10V, IF = 10mA, Ta = 25C CTRce(sat) Vce = 0.4V Ta = 50C 1.0 Figure 2. Switching schematic 0.5 NCTR(SA T) NCTR 0.0 .1 1 10 IF - LED Current - mA 100 VCC=10 V IF=2 mA F=10 KHz, DF=50% VO RE=100 Figure 6. Normalized non-saturated and saturated CTR at TA=70C versus LED current NCTR - Normalized CTR 1.5 Normalized to: Vce = 10V, IF = 10mA Ta = 25C CTRce(sat) Vce = 0.4V 1.0 0.5 Ta = 70C NCTR(SAT) NCTR 1 10 IF - LED Current - mA 100 0.0 .1 IL352T Semiconductor Group 4-22 Figure 7. Normalized non-saturated and saturated CTR at TA=85C versus LED current Figure 8. Collector-emitter current versus temperature and LED current 1.5 NCTR - Normalized CTR Ice - Collector Current - mA 35 Normalized to: Vce = 10V, IF = 10mA, Ta = 25C CTRce(sat) Vce = 0.4V 30 25 20 15 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 25C 85C 70C 50C 1.0 0.5 Ta = 85C NCTR(SAT) NCTR 1 10 IF - LED Current - mA 100 0.0 .1 Figure 9. Collector-emitter leakage current versus temperature Iceo - Collector-Emitter - nA 10 10 10 5 4 3 Figure 10. Normalized CTRcb versus LED current and temperature NCTRcb - Normalized CTRcb 1.5 Normalized to: IF =10 mA Vcb = 9.3 V Ta = 25C 1.0 10 2 10 1 Vce = 10V TYPICAL 0.5 10 0 10 -1 10 -2 -20 25C 50C 70C .1 1 10 IF - LED Current - mA 100 0.0 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 11. Collector base photocurrent versus LED current 1000 Icb - Collector Base Photocurrent - A Figure 12. Normalized photocurrent versus IF and temperature Normalized Photocurrent vs If and Temp Ta = 25C 100 10 1 .1 .01 .1 1 10 IF IF - LED Current mA - LED Current - - mA 100 Icb = 1.0357 *IF ^1.3631 Normalized Photocurrent 10 Normalized to: If = 10ma, Ta = 25C 1 .1 NIB-Ta=-20C NIb,Ta=25 C NIb,Ta=50 C NIb,Ta=70 C .01 .1 1 10 IF -LED Current--mA If - LED Current mA 100 Figure 13. Propagation delay versus collector load resistor tpLH - Propagation Delay - s 1000 T = 25C, IF = 10mA a Vcc = 5 V, Vth = 1.5 V tpHL 2.5 100 2.0 10 tpLH 1 .1 1.5 1.0 1 10 100 RL - Collector Load Resistor - K tpLH - Propagation Delay - s IL352T Semiconductor Group 4-23 |
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