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| IRF5210 MECHANICAL DATA Dimensions in mm (inches) 4 0 .0 1 (1 .5 7 5 ) M ax. 2 6 .6 7 (1 .0 5 0 ) M ax. 4 .4 7 (0 .1 7 6 ) Rad. 2 P ls . P-CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 2 2 .2 3 (0 .8 7 5 ) M ax. 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . 3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 (1 .1 7 7 ) 1 2 .1 9 (0 .4 8 ) 1 .6 3 (0 .0 6 4 ) 1 1 .1 8 (0 .4 4 ) 1 .5 2 (0 .0 6 0 ) VDSS ID RDS(on) FEATURES 100V 40A W 0.07W 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) 2 P ls 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) * FAST SWITCHING * SCREENING OPTIONS AVAILABLE 1 6 .9 7 (0 .6 6 8 ) 1 6 .8 7 (0 .6 6 4 ) TO-3 Metal Package Pin 1 - Gate Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS EAR TJ , Tstg RqJC RqJA Gate - Source Voltage Continuous Drain Current (Tcase = 25C) Continuous Drain Current (Tcase = 100C) 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 2 Repetitive Avalanche Energy 1 Operating Junction and Storage Temperature Range Junction - Case Thermal Resistance Junction - Ambient Thermal Resistance 20V 40A 29A 140A 200W 1.3W/C 780mJ 21mJ -55 to +150C 0.75C/W 62C/W Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) VDD = -25V , L = 3.5mH , RG = 25W , IAS = -21A , Starting TJ = 25C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.8/00 IRF5210 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS V(BR)DSS Drain - Source Breakdown Voltage RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Static Drain to Source On Resistance 4 Gate Threshold Voltage Forward Transconductance Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge4 Gate - Source Charge4 Gate - Drain ("Miller") Charge4 Turn-On Delay Time4 Rise Time4 Turn-Off Delay Time4 Fall Time4 VGS = 0V VDS = -25V f = 1MHz ID = -21A VDS = -80V VDD = -50V ID = -21A RG = 2.5W VGS = -10V 17 86 79 81 100 D Test Conditions VGS = 0V VGS = -10V VDS = VGS VDS = -8V VDS = 100V VDS = 100V VGS = 20V VGS = -20V ID = -250mA ID = -24A ID = -250mA ID = -20A VGS = 0V VGS = 0V TJ = 125C Min. -100 Typ. Max. Unit V 0.07 - 2.0 14 -25 -250 100 -100 2700 790 450 180 25 97 -4.0 W V S mA nA pF nC ns RG = 2.4W SOURCE - DRAIN CHARACTERISTICS Continuous Source Current Pulse Source Current 1 MOSFET symbol showing the G -40 -140 -1.6 170 1.2 5.0 260 1.8 17 4.5 7.5 A V integral reverse p-n junction S Diode Forward Voltage 4 Reverse Recovery Time Forward Turn-On Time PACKAGE CHARACTERISTICS Internal Drain Internal Source Inductance 4 4 di / dt -100A/ms TJ = 25C, IS = 21A, VGS = 0V TJ = 25C, IF = -21A negligible Reverse Recovery Charge mC -- ns Between lead, 6mm(0.25in.) from package and center of die contact nH Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) VDD = -25V , L = 3.5mH , RG = 25W , IAS = -21A , Starting TJ = 25C 3) ISD -6.5A , di/dt -100A/ms , VDD BVDSS , TJ 150C , Suggested RG = 7.5W 4) Pulse Test: Pulse Width 300ms, d 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.8/00 |
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