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| NJG1304E MEDIUM POWER AMPLIFIER GaAs MMIC sGENERAL DESCRIPTION NJG1304E is a GaAs MMIC designed mainly for driver amplifier of PHS base station in Japan. This is a variable gain type with 20dB dynamic range. It features very low distortion and Pacp is less than -70dBc. at 17dBm output power ,and enable low voltage and high efficiency operation. Small Plastic mold Package are adopted. sPACKAGE OUTLINE NJG1304E sFEATURES qVoltage gain under low distortion qLow voltage operation qLow current consumption qHigh gain qLow distortion(ACP) qPower Dissipation qReduction of Parasitic oscillation qInput and output internal matching circuit qPackage sPIN CONFIGURATION E Type (Top View) 1 2 3 4 5 6 7 VDD= +3.0V typ. IDD= 180mA typ. @f= 1.9GHz, Pout= 17dBm Gain= 32dB PACP= -70dBc typ. @f= 1.9GHz, POUT= 17dBm 1000mW EMP14 14 13 12 11 10 9 8 Pin Connection 1.GND 2.RFin 3.VGG1 4.VCONT 5.VGG2 6.GND 7.GND 8.GND 9.RFOUT 10.VDD2 11.GND 12.VDD1 13.GND 14.GND -1- NJG1304E sABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gate Voltage Gain Control Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1,VDD2 VGG1,VGG2 VCONT Pin PD Topr Tstg CONDITIONS VGG1,VGG2 =-0.9V VDD1,VDD2=3.0V VDD1,VDD2=3.0V VDD1,VDD2=3.0V, VGG1,VGG2 =-0.9V At on PCB board (Ta=+25oC, Zs=Zl=50) RATINGS UNITS 6.0 V -4.0 V -4.0 V 3.0 dBm 1000 mW -30 ~ +85 C -40 ~ +150 C sELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITONS Operating Frequency freq VDD1,2=3.0V Drain Voltage VDD1,2 Gate Voltage VGG1,2 VDD1,2=3.0V, Iidle=180mA Idle Current *1 Iidle VDD1,2=3.0V, No RF Signal Operating Current *1 IDD VDD1,2=3.0V, Pout=21dBm Gate Current *2 IGG VDD1,2=3.0V, Pout=21dBm Gain Control Terminal VDD1,2=3.0V, Pout=21dBm ICONT Current -2.0 - -70 dBc - - -70 dBc - - -70 dBc -35 -30 dBc 2.2 Parasitic Oscillation for Fundamental Signal Level :=<-60dBc *1:VDD1 Terminal VDD2 Terminal Total Current *2:VGG1 Terminal VGG2 Terminal Total Current -2- NJG1304E sTYPICAL CHARACTERISTICS Gain vs. Frequency vs. Control Voltage (V =3.0V, I =180mA, T =25 C) DD DD a o Gain vs PHS Band Frequency vs. Control Voltage (V =3.0V, I =180mA, T =25 C) 50 DD DD a o 40 V 30 =0V CONT 40 V CONT =0V Gain (dB) -1.0V 10 -1.4V 0 Gain (dB) 20 30 20 -1.0V 10 -1.4V -10 0.0 1.0 2.0 Frequency f (GHz) 3.0 0 1.89 1.9 1.91 1.92 Frequency f (GHz) Output Power, Operating Current vs. Input Power (V =3.0V, V DD cont Output Power vs. Input Power vs. Control Voltage o =0V, I idle =180mA, f=1.9GHz, T =25 C) a (V 26 DD =3.0V, I idle =180mA, f=1.9GHz, T =25 C) a o 26 P 24 (dBm) out 250 V 24 (mA) CONT =0V -1V -1.2V I 22 (dBm) out DD 22 20 -1.4V out Operation Current I Output Power P DD 200 20 150 Output Power P 18 16 14 18 16 14 -20 -15 -10 -5 Input Power P (dBm) in 100 0 12 -20 -15 -10 -5 0 Input Power P (dBm) in 5 10 Output Power, Gate Current vs. Input Power (V =3.0V, V DD cont P o a acp -20 -30 vs. Input Power vs. Control Voltage (V =3.0V, I DD idle =0V, I idle =180mA, f=1.9GHz, T =25 C) 10 P out =180mA, f=1.9GHz, T =25 C) a o 26 24 (dBm) ( A) -40 (dBc) -50 V CONT =0V -1V 22 0 out Output Power P acp 20 Gate Current I GG -1.4V -60 -70 -1.2V -80 18 I 16 GG -10 P 14 -20 -20 -15 -10 -5 Input Power P (dBm) in 0 -90 -20 -15 -10 -5 0 Input Power P (dBm) in 5 10 -3- NJG1304E sTYPICAL CHARACTERISTICS Output Power, P (V DD acp vs. Control Voltage o in a P -66 acp out vs. Operating Current vs. V =17dBm, V o cont a DD =3.0V, I 25 idle =180mA, f=1.9GHz, P =-11dBm, T =25 C) -20 P out (P =0V, f=1.9GHz, T =25 C) (dBm) 20 -40 (dBm) (dBc) -68 V =3.0V DD out 15 Output Power P -70 acp P acp 10 -60 P 0 -80 -2 -1.5 -1 -0.5 Control Voltage V 0 (V) 0.5 acp -72 P 5 5.0V 4.0V -74 -5 CONT -76 120 140 160 180 DD 200 (mA) 220 Operating Current I Operating Current, P (V DD acp vs. Control Voltage o in a P (P out =3.0V, I idle =180mA, f=1.9GHz, P =-11dBm, T =25 C) -20 acp vs. Operating Current vs. V in cont DD o a =13dBm, P =-7dBm, V =-1.1V, f=1.9GHz, T =25 C) 250 -66 (mA) -68 200 I DD V =3.0V DD DD Operating Current I -40 (dBc) (dBc) -70 4.0V acp P acp 5.0V -72 150 P acp -60 -74 P 100 -2 -1.5 -1 -0.5 CONT -80 0 (V) 0.5 Control Voltage V -76 120 140 160 180 DD 200 (mA) 220 Operating Current I Gain, P (V DD acp vs. Ambient Temperature idle Operating Current vs. Ambient Temperature (V =3.0V, V DD cont =3.0V, V 34 cont =0V, I =180mA, P out =21dBm, f=1.9GHz) -55 =0V, I idle =180mA, P out =21dBm, f=1.9GHz) 190 33 Gain (dB) Gain 32 -60 (dBc) (mA) Operating Current I DD 185 180 31 P acp P acp 175 30 -40 -65 -20 0 20 40 o a 60 80 170 -40 -20 0 20 40 o a 60 80 Ambient Temperature T ( C) Ambient Temperature T ( C) -4- NJG1304E sTYPICAL CHARACTERISTICS |S | , |S | vs. Frequency 11 22 (V =3.0V, I =180mA, V DD DD cont =0V, T =25 C) a o 20 10 |S | , |S | (dB) 0 22 |S | 22 -10 11 |S | 11 -20 -30 0 1 Frequency f (GHz) 2 3 ;All adjacent channel leakage power used in these evaluations are those of 600kHz offset from fundamental wave at PHS operating condition(/4QPSK moduration) -5- NJG1304E sRECOMMENDED CIRCUIT 1 GND GND 14 13 RFIN GND 12 VGG1 VDD1 11 VCONT GND 10 VGG2 VDD2 9 GND RFOUT 8 GND GND C2 C1 C3 C2 C1 RFIN (-0.5~1.2V) -2V VGG (0~-2V) VDD (3.0~5.0V) VCONT C3 C1 C2 6 7 RFOUT sRECOMMENDED CIRCUIT TO GENERATE NEGSTIVE VOLTAGE +3.0V -3.0V 10uF + 10kTrimmer Resistance (7k) 8 5 NJU7660 1 4 VGG (-0.9V Typ.) (3k) + 10uF +V 1M VCONT (0.0~+2.0V) 1M 2 7 - NJU7001 3 4 500k -V 6 out Vcont (0.0~-2.0V) -6- NJG1304E sRECOMMENDED PCB DESIGN RFIN VGG1 C1 C2 VCONT VGG2 C3 C1 C2 C1 C2 C2 C1 C3 RFOUT VDD C1 PCB: FR4, t=0.5mm MICROSTRIP LINE WIDTH=1mm PCB SIZE: 30.0x25.5mm The reflow method is recommended for this device to attach on PCB. Parts list Parts ID C1 C2 C3 CONSTANT 1000pF 33pF 1uF COMMENT MURATA (GRM36, 1005size) MURATA (GRM36, 1005size) MURATA (GRM36, 1005size) -7- NJG1304E sPAKCAGE OUTLINE(EMP14) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm :130mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -8- |
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