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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Switching Regulators Inverters Motor Controls Deflection Circuits Fast Turn-Off Times 30 ns Inductive Fall Time -- 75_C (Typ) 50 ns Inductive Crossover Time -- 75_C (Typ) 600 ns Inductive Storage Time -- 75_C (Typ) * Operating Temperature Range -65 to + 200_C * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle (2) Indicate JEDEC Registered Data. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designer's and SWITCHMODE are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Switchmode Series Ultra-Fast NPN Silicon Power Transistors Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. * * * * * THERMAL CHARACTERISTICS (2) MAXIMUM RATINGS (2) Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5.0 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating v 10%. VCEO(sus) Symbol Symbol TJ, Tstg VCEV RJC VEB IC ICM IB IBM PD TL - 65 to + 200 Max Max 275 175 100 1.0 850 450 1.0 6.0 10 15 15 20 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS 175 WATTS 2N6836 Order this document by 2N6836/D CASE 1-07 TO-204AA (TO-3) Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C 3-1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6836 (1) Pulse Test: PW 300 s, Duty Cycle (2) fT = |she| ftest. * Indicates JEDEC Registered Limit. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS (2) ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 3-2 Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Inductive Load (Table 2) Fall Time Storage Time Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Current Gain -- Bandwidth Product (VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) (IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.0 Adc, PW = 30 s, Duty Cycle 2.0%) Characteristic v v 2%. (VBE(off) = 5.0 Vdc) (IB2 = 2.6 Adc, RB2 = 1.6 ) (TC = 150_C) _C) (TC = 100_C) _C) VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA Motorola Bipolar Power Transistor Device Data IEBO ICER ICEV Cob hFE IS/b tsv tsv fT td tc tfi tfi tr tf tf tc ts ts 450* 8.0* 5.0 Min 50* 10* -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1050 1200 See Figure 15* Typ 120 800 650 200 200 70 90 50 80 20 -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 16 1500* 3000* 0.25* 1.5* 200* 150* 250* 500* 100* 400* Max 1.5* 1.5 1.0* 1.2 2.5* 3.0* 75* 30* -- 2.5 -- -- -- -- -- -- mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc pF ns ns -- 2N6836 TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 50 TC = 100C hFE, DC CURRENT GAIN 25C 20 1.0 0.7 0.5 0.3 0.2 IC = 1 A 10 A 15 A 10 5A 5.0 VCE = 5.0 V 3.0 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 20 TC = 25C 0.1 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMPS) 2.0 5.0 10 Figure 1. DC Current Gain Figure 2. Collector Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 3.0 2.0 1.0 0.70 0.50 0.30 0.20 f = 10 TJ = 100C VBE, BASE-EMITTER VOLTAGE (VOLTS) 1.5 f = 10 1.0 0.70 75C 0.50 0.40 0.30 0.20 0.15 0.15 0.20 0.30 0.50 0.70 1.0 2.0 3.0 5.0 7.0 10 15 100C TC = 25C f = 10 TJ = 25C 0.10 0.07 0.05 0.15 0.2 0.3 f = 5 TJ = 25C 2.0 3.0 0.5 0.7 1.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) 15 IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage 104 IC, COLLECTOR CURRENT ( A) 10000 5000 3000 2000 1000 500 300 200 100 50 20 0 + 0.2 + 0.4 + 0.6 10 0.1 10 1.0 100 VR, REVERSE VOLTAGE (VOLTS) 850 TC = 25C 103 TJ = 150C 102 101 125C 100C 75C 100 10-1 - 0.4 REVERSE 25C - 0.2 FORWARD VCE = 250 V C, CAPACITANCE (pF) Cib Cob VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3-3 2N6836 TYPICAL DYNAMIC CHARACTERISTICS 5000 3000 t sv , STORAGE TIME (ns) 2000 1000 500 300 200 100 0.07 0.05 f = 5 TC = 75C VCC = 20 VOLTS 1.5 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 15 VBE(off) = 0 VOLTS t sv , STORAGE TIME (ns) VBE(off) = 2.0 VOLTS VBE(off) = 5.0 VOLTS 5000 3000 2000 1000 700 500 300 200 100 0.05 1.5 2.0 f = 10 TC = 75C VCC = 20 VOLTS 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 15 VBE(off) = 2.0 VOLTS VBE(off) = 0 VOLTS VBE(off) = 5.0 VOLTS Figure 7. Storage Time Figure 8. Storage Time t fi , COLLECTOR CURRENT FALL TIME (ns) 500 300 200 100 50 f = 5 TC = 75C VCC = 20 VOLTS 1.5 2.0 VBE(off) = 0 VOLTS VBE(off) = 5.0 VOLTS VBE(off) = 2.0 VOLTS t fi , COLLECTOR CURRENT FALL TIME (ns) 1000 1000 500 300 200 100 50 f = 10 TC = 75C VCC = 20 VOLTS 1.5 2.0 VBE(off) = 5.0 VOLTS VBE(off) = 2.0 VOLTS VBE(off) = 0 VOLTS 20 10 20 10 7.0 3.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 15 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 15 Figure 9. Collector Current Fall Time Figure 10. Collector Current Fall Time 1500 1000 t c , CROSSOVER TIME (ns) 500 300 200 100 50 20 15 VBE(off) = 5.0 VOLTS f = 5 TC = 75C VCC = 20 VOLTS 1.5 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 15 VBE(off) = 2.0 VOLTS VBE(off) = 0 VOLTS t c , CROSSOVER TIME (ns) 1500 1000 500 300 200 100 50 f = 10 TC = 75C VCC = 20 VOLTS 1.5 2.0 VBE(off) = 2.0 VOLTS VBE(off) = 0 VOLTS VBE(off) = 5.0 VOLTS 20 15 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 15 Figure 11. Crossover Time Figure 12. Crossover Time 3-4 Motorola Bipolar Power Transistor Device Data 2N6836 10 I B2 , REVERSE BASE CURRENT (AMPS) IC pk 90% VCE(pk) IC tsv trv tc VCE IB 90% IB1 10% VCE(pk) 10% 2% IC IC pk VCE(pk) 90% IC(pk) tfi tti 9 8 7 6 5 4 3 2 1 0 TIME 0 1.0 2.0 3.0 4.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 5.0 IC = 10 AMPS TC = 25C IB1 = 1.0 AMPS IB1 = 2.0 AMPS Figure 13. Inductive Switching Measurements Figure 14. Peak Reverse Base Current GUARANTEED SAFE OPERATING AREA LIMITS 20 IC, COLLECTOR CURRENT (AMPS) 10 5.0 1 ms 2.0 1.0 0.50 dc TC = 25C 10 s IC(pk) , PEAK COLLECTOR CURRENT (AMPS) 20 18 14 Bf TC w4 v 100C VBE(off) = 0 V VBE(off) = 1 to 5 V 10 6.0 0.10 0.05 0.02 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 200 300 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 450 2.0 0 100 150 200 250 350 450 600 700 850 VCE, PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Maximum Forward Bias Safe Operating Area Figure 16. Maximum Reverse Bias Safe Operating Area SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 16 gives the RBSOA characteristics. w Motorola Bipolar Power Transistor Device Data 3-5 2N6836 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 RJC(t) = r(t) RJC RJC = 1.0C/W TJ(pk) - TC = P(pk) RJC(t) 0.1 0.01 0.01 0.1 1.0 t, TIME (ms) 10 100 1k Figure 17. Thermal Response 100 SECOND BREAKDOWN DERATING POWER DERATING FACTOR (%) 80 60 40 THERMAL DERATING 20 0 0 40 80 120 160 TC, CASE TEMPERATURE (C) 200 Figure 18. Power Derating Table 1. Resistive Load Switching td and tr H.P. 214 OR EQUIV. P.G. 0V ts and tf 20 + - + Vdc [ 11 Vdc 2N6191 [ - 35 V *IB TUT RB = 10 *IC H.P. 214 OR EQUIV. P.G. 50 500 VCC = 250 Vdc RL = 25 IC = 10 Adc IB = 1.0 Adc A 10 F 100 0.02 F RB1 A RL VCC 0.02 F 1.0 F RB2 2N5337 100 -V 50 [ 11 V Vin 0V tr +V 0V -5V TUT *IB *IC v 15 ns *Tektronix P-6042 or equivalent. 50 RL VCC VCC = 250 RL = 25 IC = 10 Adc IB1 = 1.0 Adc IB2 = 2.6 Adc For VBE(off) = 5.0 V RB1 = 10 RB2 = 1.6 RB2 = 0 *NOTE: Adjust - V to obtain desired VBE(off) at Point A. 3-6 Motorola Bipolar Power Transistor Device Data 2N6836 Table 2. Inductive Load Switching +V 100 0.02 F H.P. 214 OR EQUIV. P.G. + 0V - 35 V - 10 F 0.02 F 1.0 F +- 500 20 [ 11 V 2N6191 RB1 A RB2 2N5337 50 100 T1 0V -V A T1 T.U.T. *IB +V *IC L MR856 Vclamp -V IC VCE(pk) VCE IC(pk) [ VCE(pk) = VCE(clamp) VCC IB IB1 Lcoil (ICpk) VCC 50 T1 adjusted to obtain IC(pk) V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts Inductive Switching L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Scope -- Tektronix 7403 or Equivalent RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 R IB2 *Tektronix *P-6042 or *Equivalent Note: Adjust - V to obtain desired VBE(off) at Point A. TYPICAL INDUCTIVE SWITCHING WAVEFORMS tsv IC(pk) = 10 Amps IB1 = 1.0 Amp VBE(off) = 5.0 Volts VCE(pk) = 400 Volts TC = 25C Time Base = 100 ns/cm IC(pk) = 10 Amps IB1 = 1.0 Amp VBE(off) = 5.0 Volts VCE(pk) = 400 Volts TC = 25C Time Base = 20 ns/cm IC(pk) tfi, tc t fi = 20 ns VCE(pk) VCE(pk) 0 I B1 VCE(sat) t sv = 370 ns I B2 VCE(sat) tc 24 ns Motorola Bipolar Power Transistor Device Data 3-7 2N6836 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 3-8 Motorola Bipolar Power Transistor Device Data *2N6836/D* 2N6836/D |
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