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* Pulse Test: Pulse Width
(c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data * DC Current Gain -- hFE = 40 (Min) @ IC = 0.15 Adc * BD169 is complementary with BD170 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Plastic Medium Power Silicon NPN Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Current Gain-Bandwidth Product (IC = 500 mAdc, VCE = 2 Vdc, f = 1.0 MHz)
Base-Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc)
DC current Gain (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = 80 Vdc, IE = 0)
Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Device Dissipation @ TC = 25_C Derate above 25_C
Total Device Dissipation @ TA = 25_C Derate above 25_C
Base Current
Collector Current
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Characteristic
Rating
x 300 s, Duty Cycle x 2.0%.
Characteristic
Symbol
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
JC
JA
PD
PD
IC
IB
- 65 to + 150
Value
6.25
Max
1.25 8
100
20 160
0.5
1.5
80
80
5
VCE(sat)*
VBE(on)*
Symbol
BVCEO
ICBO
IEBO
hFE*
fT
Watt mW/_C
Watts mW/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
_C
Min
6.0
40 15
80
--
--
--
--
1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS
0.95
Max
0.5
1.0
0.1
--
-- --
--
BD169
CASE 77-09 TO-225AA TYPE
Order this document by BD169/D
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
BD169
10 TJ = 150C PD, POWER DISSIPATION (WATTS) 25 20 15 10 5 0 IC, COLLECTOR CURRENT (AMP) 5.0 3.0 2.0 5.0 ms 1.0 0.5 0.3 0.2 0.1 5.0 SECOND BREAKDOWN dc LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 100 s 1.0 ms
0
20
40
60 80 100 120 140 TC, CASE TEMPERATURE (C)
160
Figure 1. PD - TC Derating Curve
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Safe Operating Area (see Note 1)
1.2 1 0.8 0.6 0.4 0.2 0 IC = 0.1 A 0.25 A 0.5 A 1A
1
5
10
50 100 IB, BASE CURRENT (mA)
500
1000
Figure 3. Collector Saturation Region
10 hFE , DC CURRENT GAIN, NORMALIZED 1 0.5 TJ = + 150C + 25C - 25C VOLTAGE (VOLTS) VBE(sat) at IC/IB = 10 0.1 0.05 VCE(sat) at IC/IB = 10 VCE = 2 V TJ = 25C 0.01 VBE at VCE = 2 V
1
0.1
0.01
0.05 0.1 IC, COLLECTOR CURRENT (A)
0.5
1
10
50 100 IC, COLLECTOR CURRENT (mA)
500
1000
Figure 4. Current Gain Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 2
Figure 5. "On" Voltage The data of Figure 2 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
Motorola Bipolar Power Transistor Device Data
BD169
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-09 TO-225AA TYPE ISSUE W
Motorola Bipolar Power Transistor Device Data
3
BD169
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Motorola Bipolar Power Transistor Device Data BD169/D

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