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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR8/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. * * * * * Blocking Voltage to 800 Volts On-State Current Rating of 8 Amperes RMS High Surge Current Capability -- 80 Amperes Industry Standard TO220 AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity
MCR8 SERIES*
*Motorola preferred devices
SCRs 8 AMPERES RMS 400 thru 800 VOLTS
A
K A G
CASE 221A-06 (TO-220AB) STYLE 3
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Peak Repetitive Off-State Voltage(1) Peak Repetitive Reverse Voltage (TJ = -40 to 125C) Symbol VDRM VRRM MCR8D MCR8M MCR8N IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 400 600 800 8 80 26.5 5.0 0.5 2.0 -40 to +125 -40 to +150 A A A2sec Watts Watts A Value Unit Volts
On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width
v1.0 s, TC = 80C) v1.0 s, TC = 80C)
Average Gate Power (t = 8.3 ms, TC = 80C) Peak Gate Current (Pulse Width
Operating Junction Temperature Range Storage Temperature Range
C C
C/W
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds RJC RJA 2.0 62.5
TL 260 C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Thyristor Device Data (c) Motorola, Inc. 1995
1
MCR8 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM IRRM -- -- -- -- 0.01 2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 16 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Hold Current (Anode Voltage = 12 V) VTM IGT VGT IH -- 2.0 0.5 4.0 -- 7.0 0.65 22 1.8 15 1.0 30 Volts mA Volts mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) *Indicates Pulse Test: Pulse Width TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 125 P(AV) AVERAGE POWER (WATTS) dv/dt 50 200 -- V/s
v2.0 ms, Duty Cycle v2%.
10 dc 180
120
a
8
a
120 90 60
115
a = Conduction
Angle
6
a = Conduction
Angle
110
4
a = 30
a = 30
105 100 0 1 2
60
90
120 180
dc
2 0
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 1. Average Current Derating
Figure 2. Maximum On-state Power Dissipation
IT , INSTANTANEOUS ON-STATE CURRENT (AMPS)
100 Maximum @ TJ = 125C 10 Typical @ TJ = 25C R(t) TRANSIENT THERMAL R (NORMALIZED)
1
0.1 ZqJC(t) = RqJC R(t)
1 Maximum @ TJ = 25C
0.1 0.5
0.01 0.1 1 10 100 1000 t, TIME (ms)
1
1.5
2
2.5
3
3.5
4
4.5
5
1104
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. On-State Characteristics
Figure 4. Transient Thermal Response
2
Motorola Thyristor Device Data
MCR8 SERIES
100 I L , LATCHING CURRENT (mA) 10 10 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) 100
IH , HOLDING CURRENT (mA)
Figure 5. Typical Holding Current Versus Junction Temperature
Figure 6. Typical Latching Current Versus Junction Temperature
100 V GT, GATE TRIGGER VOLTAGE (VOLTS) 5 20 35 50 65 80 95 110 125 I GT , GATE TRIGGER CURRENT (mA)
0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 -40 -25 -10 5 20 35 50 65 80 95 110 125
10
1 -40 -25 -10
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Typical Gate Trigger Current Versus Junction Temperature
1000 I TSM , PEAK SURGE CURRENT (AMP) 80
Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature
Tj = 125C VPK = 800 V STATIC dv/dt (V/uS)
70
60
50
100 10 100 1000 RGK, GATE CATHODE RESISTANCE (OHMS)
1104
40 1 2 3 4 5 6 7 8 9 10 NUMBER OF CYCLES
Figure 9. Typical Exponential Static dv/dt Versus Gate Cathode Resistance
Figure 10. Maximum Non-Repetitive Surge Current
Motorola Thyristor Device Data
3
MCR8 SERIES
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
STYLE 3: PIN 1. 2. 3. 4.
H Z L V G D N R J
CATHODE ANODE GATE ANODE
CASE 221A-06 (TO-220AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
4
Motorola Thyristor Device Data
*MCR8/D*
MCR8/D

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