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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3P03BJT/D Plastic Power Transistors SO-8 for Surface Mount Applications * Collector -Emitter Sustaining Voltage -- VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc * High DC Current Gain -- hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc * Low Collector -Emitter Saturation Voltage -- VCE(sat) = 0.24 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc * Miniature SO-8 Surface Mount Package - Saves Board Space MMDJ3P03BJT Motorola Preferred Device DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES E B E B Schematic C CASE 751-05, Style 16 (SO-8) C Emitter-1 Base-1 Emitter-2 Base-2 1 2 3 4 8 7 6 5 Collector-1 Collector-1 Collector-2 Collector-2 Top View Pinout IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I IIIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol VCB Value 45 30 Unit Vdc Vdc Vdc Adc Adc Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCEO VEB IC IB 6.0 3.0 5.0 1.0 Collector Current -- Continuous Collector Current -- Peak Base Current -- Continuous Operating and Storage Junction Temperature Range TJ, Tstg - 55 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RJA Max 100 185 Unit Thermal Resistance - Junction to Ambient on 1 sq. (645 sq. mm) Collector pad on FR-4 board material with one die operating. Thermal Resistance - Junction to Ambient on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 board material with one die operating. _C/W Total Power Dissipation @ TA = 25_C mounted on 1 sq. (645 sq. mm) Collector pad on FR-4 board material with one die operating. Derate above 25_C Maximum Temperature for Soldering PD 1.25 10 260 Watts mW/_C TL _C This document contains information on a new product. Specifications and information are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII III I I I I IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MMDJ3P03BJT (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) fT = |hFE| S ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS(1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 2 Current-Gain -- Bandwidth Product(2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc) Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125C) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Characteristic VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Motorola Bipolar Power Transistor Device Data VEBO IEBO ICER Cob hFE Cib fT Min 125 110 90 6.0 30 -- -- -- -- -- -- -- -- -- -- -- 0.15 -- -- Typ 135 100 260 -- -- -- -- -- -- -- -- -- 110 1.10 1.25 0.21 0.24 0.55 Max 150 20 200 10 -- -- -- -- -- -- -- Adc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF -- MMDJ3P03BJT VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1.00 0.25 IC = 1.2 A 0.75 IC = 3.0 A 0.50 1.2 A 0.8 A 0.125 0.5 A 0.25 0.5 A 0 0.25 A 1.0 0.8 A 0.25 A 0 1.0 10 100 1000 IB, BASE CURRENT (mA) 10 100 1000 IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 1000 150C HFE, DC CURRENT GAIN HFE, DC CURRENT GAIN 150C 25C 100 - 55C 100 25C - 55C VCE = 1.0 V 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 VCE = 4.0 V 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 3. DC Current Gain Figure 4. DC Current Gain 10 IC/IB = 10 1.0 VBE(sat) V, VOLTAGE (V) VBE(sat) V, VOLTAGE (V) 1.0 0.1 VCE(sat) 0.1 VCE(sat) IC/IB = 50 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 5. "On" Voltages Figure 6. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 MMDJ3P03BJT 1.2 - 55C 0.8 25C 150C 0.4 VCE = 4.0 V 0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) C, CAPACITANCE (pF) 1000 V, VOLTAGE (V) 100 Cob Figure 7. VBE(on) Voltage Figure 8. Output Capacitance f t , CURRENT-GAIN BANDWIDTH PRODUCT 1000 IC , COLLECTOR CURRENT (A) VCE = 10 V ftest = 1.0 MHz TA = 25C 10 0.5 ms 1.0 5.0 ms 100 ms 0.1 100 0.01 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECONDARY BREAKDOWN LIMIT 0.1 1.0 10 100 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.001 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 9. Current-Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 2.0 1.5 1.0 TA 0.5 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. PD, POWER DISSIPATION (W) v 75 100 125 150 0 25 50 T, TEMPERATURE (C) Figure 11. Power Derating 4 Motorola Bipolar Power Transistor Device Data MMDJ3P03BJT 1.0 r (t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.01 RJA(t) = r(t) JA JA = 185C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) JA(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 0.0001 0.0001 0.001 0.01 0.1 t, TIME (seconds) 1.0 10 Figure 12. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MMDJ3P03BJT PACKAGE DIMENSIONS -A- B M 8 5 X 45 _ J 1 4 4X -B- M_ G F NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 P 0.25 (0.010) M C R -T- 8X SEATING PLANE D 0.25 (0.010) M TB S A S STYLE 16: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER, DIE #1 BASE, DIE #1 EMITTER, DIE #2 BASE, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #1 COLLECTOR, DIE #1 K CASE 751-05 ISSUE P Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://www.mot.com/SPS/ 6 Motorola Bipolar Power Transistor Device Data MMDJ3P03BJT/D |
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