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| P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) - 10/12/15/20/25 ns (Commercial) - 12/15/20/25/35 ns (Industrial) - 15/20/25/35/45 ns (Military) Low Power Operation - 743 mW Active -10 - 660/770 mW Active for -12/15 - 550/660 mW Active for -20/25 /35 - 193/220 mW Standby (TTL Input) - 83/110 mW Standby (CMOS Input) P4C187 - 5.5 mW Standby (CMOS Input) P4C187L (Military) Single 5V10% Power Supply Data Retention with 2.0V Supply (P4C187L Military) Separate Data I/O Three-State Output TTL Compatible Output Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) - 22-Pin 300 mil DIP - 24-Pin 300 mil SOJ - 22-Pin 290x490 mil LCC DESCRIPTION The P4C187/L are 65, 536-bit ultra high speed static RAMs organized as 64K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs operate from a single 5V 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10A. Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS reduces power consumption to a low 743mW active, 193/83mW standby for TTL/CMOS inputs and only 5.5 mW standby for the P4C187L. The P4C187/L are available in 22-pin 300 mil DIP, 24-pin 300 mil SOJ, and 22-pin LCC packages providing excellent board level densities. FUNCTIONAL BLOCK DIAGRAM A PIN CONFIGURATIONS A0 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 V CC A 15 A 14 A 13 A 12 A 11 A 10 A9 A8 DIN CE A2 A3 A4 A5 A6 A7 DOUT (8) ROW SELECT 65,356-BIT MEMORY ARRAY A1 A2 A3 A4 2 3 4 5 6 7 8 9 10 11 12 1 22 A1 A0 V CC A 15 21 20 19 18 17 16 15 14 13 A 14 A 13 A 12 A 11 A 10 A9 A8 A DIN INPUT DATA CONTROL COLUMN I/O A5 A6 DOUT A7 DOUT WE GND COLUMN SELECT WE GND CE A (8) A DIP (P3, D3) TOP VIEW LCC (L3) TOP VIEW For SOJ pin configuration, please see Selection Guide. WE Means Quality, Service and Speed 1Q97 55 CE DIN P4C187/187L MAXIMUM RATINGS(1) Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value -0.5 to +7 -0.5 to VCC +0.5 -55 to +125 Unit V Symbol TBIAS TSTG V C PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value -55 to +125 -65 to +150 1.0 50 Unit C C W mA VTERM TA RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) Military Ambient Temperature GND 0V 0V 0V VCC 5.0V 10% 5.0V 10% 5.0V 10% CAPACITANCES(4) VCC = 5.0V, TA = 25C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 5 7 pF pF -55C to +125C -40C to +85C Industrial 0C to +70C Commercial Output Capacitance VOUT = 0V DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) Symbol VIH VIL VHC VLC VCD VOL VOH ILI ILO ISB Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage VCC = Min., IIN = 18 mA Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current IOL = +8 mA, VCC = Min. IOH = -4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., CE = VIH, VOUT = GND to VCC Mil. Com'l. Mil. Com'l. 2.4 -10 -5 -10 -5 ___ ___ ___ ___ +10 +5 +10 +5 40 35 20 15 Test Conditions P4C187 Min Max 2.2 VCC +0.5 -0.5(3) -0.5(3) 0.8 0.2 -1.2 0.4 2.4 -5 n/a -5 n/a ___ ___ ___ ___ +5 n/a +5 n/a 40 n/a 1.0 n/a P4C187L Unit Min Max 2.2 VCC +0.5 V -0.5(3) -0.5(3) 0.8 0.2 -1.2 0.4 V V V V V V A A mA VCC -0.2 VCC +0.5 VCC -0.2 VCC +0.5 Standby Power Supply CE VIH Mil. Current (TTL Input Levels) VCC = Max ., Ind./Com'l. f = Max., Outputs Open Standby Power Supply Current (CMOS Input Levels) CE VHC Mil. VCC = Max., Ind./Com'l. f = 0, Outputs Open VIN VLC or VIN VHC ISB1 mA n/a = Not Applicable Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than -3.0V and -100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. 56 P4C187/187L POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol Parameter Temperature Range Commercial Industrial Military -10 180 N/A N/A -12 170 180 N/A -15 160 170 170 -20 155 160 160 -25 150 155 155 -35 N/A 150 150 -45 N/A N/A 145 Unit mA mA mA ICC Dynamic Operating Current* *VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL. DATA RETENTION CHARACTERISTICS (P4C187L Military Temperature Only) Symbol VDR ICCDR tCDR tR *TA = +25C tRC = Read Cycle Time Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons Min 2.0 Typ.* VCC = 2.0V 3.0V Max VCC = 2.0V 3.0V Unit V CE VCC -0.2V, VIN VCC -0.2V or VIN 0.2V 0 tRC 10 15 600 900 A ns ns This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM DATA RETENTION MODE VCC t CDR CE VIH VDR VIH 4.5V VDR 2V 4.5V tR 57 P4C187/187L AC CHARACTERISTICS--READ CYCLE (VCC = 5V 10%, All Temperature Ranges)(2) Symbol tRC tAA tAC tOH tLZ tHZ tPU tPD Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Chip Enable to Power Up Time Chip Disable to Power Down Time -10 10 10 10 2 2 5 0 10 0 2 2 -12 12 12 12 2 2 6 0 12 -15 15 15 15 2 2 8 0 15 -20 20 20 20 2 2 10 0 20 -25 25 25 25 2 2 12 0 25 -35 35 35 35 2 2 17 0 35 -45 45 45 45 Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit ns ns ns ns ns 20 ns ns 45 ns TIMING WAVEFORM OF READ CYCLE NO. 1(5) (8) t RC ADDRESS t AA t OH DATA OUT PREVIOUS DATA VALID DATA VALID TIMING WAVEFORM OF READ CYCLE NO. 2(6) tRC CE (7) t AC DATA VALID t HZ (7) t LZ DATA OUT t PU VCC SUPPLY CURRENT I CC I SB HIGH IMPEDANCE t PD Notes: 5. CE is LOW and WE is HIGH for READ cycle. 6. WE is HIGH, and address must be valid prior to or coincident with CE transition LOW. 7. Transition is measured 200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 8. Read Cycle Time is measured from the last valid address to the first transitioning address. 58 P4C187/187L AC CHARACTERISTICS - WRITE CYCLE (VCC = 5V 10%, All Temperature Ranges)(2) Symbol tWC tCW tAW tAS tWP tAH tDW tDH tWZ tOW Parameter Write Cycle Time Chip Enable Time to End of Write Address Valid to End of Write Address Set-up Time Write Pulse Width Address Hold Time from End of Write Data Valid to End of Write Data Hold Time Write Enable to Output in High Z Output Active from End of Write 0 -10 -12 -15 -20 -25 -35 -45 Min Max Min Max Min Max Min Max Min Max Min Max Min Max 10 8 8 0 8 0 6 0 6 0 12 10 10 0 10 0 7 0 7 0 15 2 12 0 12 0 10 0 8 0 20 15 15 0 15 0 13 0 12 0 25 20 20 0 20 0 15 0 15 0 35 25 25 0 25 0 20 0 17 0 45 30 30 0 30 0 25 0 20 Unit ns ns ns ns ns ns ns ns ns ns WE TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(9) t WC ADDRESS t CW CE t AW t WP WE t AS DATA IN t WZ DATA OUT DATA UNDEFINED HIGH IMPEDANCE (12) (11) t WR t AH t DW DATA VALID t DH t OW(10, 12) Notes: 9. CE and WE must be LOW for WRITE cycle. 10. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. 11. Write Cycle Time is measured from the last valid address to the first transition address. 12. Transition is measured 200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 59 P4C187/187L TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(9) CE t WC ADDRESS t AS CE t AW t WP WE t DW DATA IN DATA VALID t DH t CW t AH t WR (11) DATA OUT HIGH IMPEDANCE AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input Timing Reference Level Output Timing Reference Level Output Load GND to 3.0V 3ns 1.5V 1.5V See Figures 1 and 2 TRUTH TABLE Mode Standby Read Write CE H L L WE X H L Output High Z DOUT High Z Power Standby Active Active +5V R TH = 166.5 480 DOUT 255 30pF* (5pF* for t HZ , t LZ , t WZ and t OW ) D OUT VTH = 1.73 V 30pF* (5pF* for t HZ , t LZ , t WZ and t OW ) Figure 1. Output Load * including scope and test fixture. Note: Due to the ultra-high speed of the P4C187/L, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the VCC and ground planes directly up to the contactor fingers. A 0.01 F high frequency capacitor is also required between VCC and ground. To avoid signal reflections, Figure 2. Thevenin Equivalent proper termination must be used; for example, a 50 test environment should be terminated into a 50 load with 1.73V (Thevenin Voltage) at the comparator input, and a 116 resistor must be used in series with DOUT to match 166 (Thevenin Resistance). 60 P4C187/187L PACKAGE SUFFIX Package Suffix P J L D Description Plastic DIP, 300 mil wide standard Plastic SOJ, 300 mil wide standard Leadless Chip Carrier (ceramic) CERDIP, 300 mil wide standard TEMPERATURE RANGE SUFFIX Temperature Range Suffix C I M MB Description Commercial Temp. Range, 0C to +70C. Industrial Temp. Range, -40C to +85C. Military Temperature Range,-55C to +125C. Mil. Temp. with MIL-STD-883D Class B compliance ORDERING INFORMATION Performance Semiconductor part numbering scheme is as follows: p P4C l ss 187 t -- Temperature Range Package Code Speed (Access/Cycle Time) Low Power Designator: Blank = none, L = Low Power Device Number Static RAM Prefix l ss p t = Ultra-low standby power designator L, if needed. = Speed (access/cycle time in ns), e.g., 25, 35 = Package code, i.e., P, J, D, L. = Temperature range, i.e., C, M, MB. The P4C187 is also available per SMD 5962-86015 and 5962-89696 61 P4C187/187L SELECTION GUIDE The P4C187 is available in the following temperature, speed and package options. The P4C187L is only available over the military temperature range. Temperature Range Commercial Industrial Military Temp. Military Processed* Speed (ns) Package Plastic DIP Plastic SOJ Plastic DIP Plastic SOJ CERDIP LCC CERDIP LCC 10 -10PC -10JC N/A N/A N/A N/A N/A N/A 12 -12PC -12JC -12PI -12JI N/A N/A N/A N/A 15 -15PC -15JC -15PI -15JI -15DM -15LM 20 -20PC -20JC -20PI -20JI -20DM -20LM 25 -25PC -25JC -25PI -25JI -25DM -25LM 35 N/A N/A -35PI -35JI -35DM -35LM 45 N/A N/A N/A N/A -45DM -45LM -15DMB -20DMB -25DMB -15LMB -20LMB -25LMB -35DMB -45DMB -35LMB -45LMB * Military temperature range with MIL-STD-883, Class B processing. N/A = Not Available SOJ PIN CONFIGURATION A0 A1 A2 A3 A4 A5 NC A6 A7 D OUT WE GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 V CC A 15 A 14 A 13 A 12 NC A 11 A 10 A9 A8 D IN CE SOJ (J4) Top View 62 |
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