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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). A L KTC3875S EPITAXIAL PLANAR NPN TRANSISTOR E B L Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA1504S. G High hFE : hFE=70 700. 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 5 150 30 150 150 -55 150 UNIT V V V mA mA mW K M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Type Name Lot No. AL ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification O:70 140, Y:120 ICBO IEBO ) TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=1kHz, Rg=10k GR(G):200 400, BL(L):350 700 MIN. 70 80 TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 700 0.25 3.5 10 V MHz pF dB UNIT A A SYMBOL hFE(Note) VCE(sat) fT Cob NF 240, 2001. 2. 24 Revision No : 2 J D 1/3 KTC3875S I C - V CE COLLECTOR CURRENT I C (mA) 280 240 6.0 5.0 COMMON EMITTER h FE - I C 3k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 6 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER Ta=25 C 3.0 200 160 120 80 40 0 0 1 2 3 2.0 1.0 0.5 Ta=100 C Ta=25 C Ta=-25 C VCE =6V I B =0.2mA 0 V CE =1V 4 5 COLLECTOR-EMITTER VOLTAGE V CE (V) V CE(sat) - I C COLLECTOR-EMITTER SATURATION V CE(sat) (V) 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C VBE(sat) - I C 30 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 Ta=25 C COMMON EMITTER I C /I B =10 10 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IE TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 -0.1 COMMON EMITTER V CE =10V Ta=25 C I 3k BASE CURRENT I B (A) 1k 300 100 30 10 3 1 0.3 0 0.2 0.4 B COMMON EMITTER VCE =6V - V BE -0.3 -1 -3 -10 -30 -100 -300 Ta=2 5C Ta=-2 5C Ta=1 00 C 0.6 0.8 1.0 1.2 EMITTER CURRENT I E (mA) BASE-EMITTER VOLTAGE V BE (V) 2001. 2. 24 Revision No : 2 2/3 KTC3875S h PARAMETER - I C 5k 1k 300 h PARAMETER 100 30 10 3 1 0.3 0.1 0.1 0.3 Y O BL GR h re x10 -4 h ie xk BL O Y COMMON EMITTER VCE =12V, f=270Hz Ta=25 C h PARAMETER - V CE 5k 3k 1k 300 h PARAMETER 100 30 10 h ie xk GR BL Y O BL O Y BL GR Y O h re x10 -4 GR COMMON EMITTER I C =2mA f=270Hz Ta=25 C BL GR Y O h fe GR BL Y O BL GR h oe x h fe GR Y O 3 1 0.3 3 10 50 0.1 1 COLLECTOR CURRENT I C (mA) 0.5 1 3 10 30 100 COLLECTOR-EMITTER VOLTAGE V CE (V) P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2001. 2. 24 Revision No : 2 h oe x 300 3/3 |
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