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| QST7 Transistors Low frequency amplifier QST7 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 (1) Each lead has same dimensions Abbreviated symbol : T07 !Equivalent circuit !Absolute maximum ratings (Ta=25C) Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended Parameter Collector-base voltage Limits -30 -30 -6 -1.5 -3 500 150 -55~+150 Unit V V V A A1 mW 2 C C (6) (5) (4) (1) (2) (3) !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -30 -30 -6 - - - 270 - - Typ. - - - - - -200 - 280 13 Max. - - - -100 -100 -370 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-10A IC=-1mA IE=-10A VCB=-30V VEB=-6V IC=-1A, IB=-50mA VCE=-2V, IC=-100mA VCE=-2V, IE=100mA, f=100MHz VCB=-10V, IE=0A, f=1MHz 0.85 !Features 1) A collector current is large. 2) VCE(sat) -370mV At IC =- 1A / IB = -50mA (4) (5) (6) 0.4 0.16 (3) (2) 2.9 1/2 QST7 Transistors !Packaging specifications Package Type Code Basic ordering unit (pieces) QST7 Taping TR 3000 !Electrical characteristic curves Ta=100C VCE=-2V Pulsed BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 1 10 Ta=25C Pulsed 1 DC CURRENT GAIN : hFE Ta=25C Ta=-40C VBE(sat) Ta=-40C Ta=25C Ta=100C 100 0.1 0.1 IC/IB=50/1 IC/IB=10/1 IC/IB=20/1 VCE(sat) Ta=100C Ta=25C Ta=-40C 0.01 10 0.001 0.01 0.1 1 10 0.01 0.001 IC/IB=20/1 Pulsed 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 1000 TRANSITION FREQUENCY : fT (MHz) Fig.3 Collector-emitter saturation voltage vs. collector current 1 COLLECTOR CURRENT : IC (A) VCE=-2V Pulsed Ta=25C VCE=-2V f=100MHz 1000 Ta=25C tstg VCE=-5V IC/IB=20/1 0.1 Ta=100C Ta=25C Ta=-40C SWITCHING TIME : (ns) 100 tf 100 tdon 0.01 10 tr 0.001 0 0.5 1 1.5 10 0.01 0.1 1 10 1 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time Ta=25C IC=0A f=1MHz 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 |
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