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RB070M-30
Diodes
Schottky barrier diode (Silicon Epitaxial Planer)
RB070M-30
Applications General rectification (Common cathode dual chip) External dimensions (Unit : mm)
1.60.1 0.150.03
Land size figure
1.2 0.85
2.60.1
3.50.2
0.80.1
Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability
00.1
0.90.1 0.80.1 0.6
PMDU
ROHM : PMDU JEDEC : SOD-123 Manufacture Date
0.150.03
00.1
Structure
0.6
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.750.1 1.550.1 0.05 0.250.05
0.45
3.50.05
8.00.2
1.810.05
4.00.1
1.00.2 0
2.80.05
3.710.05
1.050.1
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 1.5 30 150 -40 to 150 Unit V V A A C C
Glass epoxy substrate at the time of assembler, half sine wave at 180.
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - - - Typ. 0.37 0.44 9 Max. 0.43 0.49 50 Unit V V A Conditions IF=0.5A IF=1.5A VR=30V
Please pay attention to static electricity when handling.
3.05
1/3
RB070M-30
Diodes
Electrical characteristic curves
10 Ta=75 100000 Ta=150 10000 Ta=125 Ta=125 1 Ta=150 Ta=25 0.1 Ta=-25 1000 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
1000 100
Ta=75 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
30
100
10 1 0.1 0.01 Ta=-25
10
0.01
0.001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
470
200 Ta=25 IF=1.5A n=30pcs 180
FORWARD VOLTAGE:VF(mV)
140 120 100 80 60 40 20 AVE:8.828uA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
460 450 440 430 420 AVE:441.5mV
REVERSE CURRENT:IR(uA)
160
Ta=25 VR=30V n=30pcs
400 390 380 370 360 350 340 330 320 310 300 AVE:332.6pF Ta=25 f=1MHz VR=0V n=10pcs
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
150
20 Ifsm
100
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 8.3ms
15
100
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
AVE:96.0A 50
10
50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
5
AVE:9.30ns
0 IFSM DISRESION MAP
0 trr DISPERSION MAP
150
1000
2 Mounted on epoxyboard Rth(j-a)
Ifs t 100
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
FORWARD POWER DISSIPATION:Pf(W)
1.5
100
D=1/2
DC
Rth(j-c) 10
IM=10mA IF=1.5A
1
Sin(180)
50
0.5
1ms
time
300us
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1 0.001
0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 1 2 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 3
2/3
RB070M-30
Diodes
0.5 5 0A 0V t 3 D=1/2 DC T Io VR D=t/T VR=15V Tj=150 5 0A 0V t 3 DC T Io VR D=t/T VR=15V Tj=150
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
0.3
Sin(180) D=1/2 DC
0.2
2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.4
4
4
REVERSE POWER DISSIPATION:PR (W)
2
D=1/2
0.1
1 Sin(180)
1 Sin(180) 0
0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta)
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc() Derating Curve (Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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