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RF601T2D
Diodes
Fast recovery diode
RF601T2D
Applications General rectification External dimensions (Unit : mm)
9.9 0.8
0.3 2.2
Structure
10.0
1.2 1.3 0.8
5.00.2
Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
10.00.3 0.1
1.80.2
4.50.3 0.1 2.80.2 1.1 0.1
7.00.3 0.1
7.2 1.2
8.00.2 12.00.2
15.0
3.10.1
17.00.4 0.2
0.70.015
2.60.03
1.9
7.2 3-1.2
1.6 12.4
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc Junction temperature Storage temperature (*1) Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 6 60 150 -55 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. Typ. Max. 0.93 10 25 Unit V A ns IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR Conditions
1.35
Construction Silicon epitaxial planar
(1) (2) (3) 2.540.5 2.540.5
13.5MIN
0.70.015 7.0
8.0
2.60.03 0.8
1/3
RF601T2D
Diodes
Electrical characteristic curves
10 10000 Ta=150 1 100 Ta=150 Ta=125 f=1MHz
1000
100
Ta=75
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
0.1
Ta=75 Ta=25
10
10
Ta=25
0.01
Ta=-25
1
Ta=-25
0.001
0 100 200 300 400 500 600 700 800 900 1000
0.1 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
890 Ta=25 Ta=25 IF=3A IF=3A n=30pcs n=30pcs
100 90 Ta=25 VR=200V n=30pcs
150 140 130 Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
880
80 70 60 50 40 30 20 10 AVE:4.60nA AVE:4.60nA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
120 110 100 90 80 70 60 50 AVE:99.4pF
870
860 AVE:859.4mV AVE:859.4mV 850
840 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300 250 200 150 100 AVE:126.0A 50 0 IFSM DISRESION MAP Ifsm 8.3ms 1cyc
30
1000 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 100 8.3ms 8.3ms
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
20 15 10 5 0 trr DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
25
1cyc
AVE:13.7ns
10
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100
Mounted on epoxy board
IM=100mA IF=3A
10
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Ifsm
PEAK SURGE FORWARD CURRENT:IFSM(A)
t
8 10
1ms time
D=1/2
DC
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a)
300us
6
Sin(180)
100
4
1
Rth(j-c)
2
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000
0 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RF601T2D
Diodes
15
0A 0V
15
Io t VR
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
30
0A 0V
Io t VR
ELECTROSTATIC DDISCHARGE TEST ESD(KV)
No break at 30kV
No break at 30kV
25 20 15 10 5 0
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
10
DC
T
D=t/T VR=100V Tj=150
10
DC
T
D=t/T VR=100V Tj=150
D=1/2
D=1/2
5
Sin(180)
5
Sin(180)
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta() Derating curv e (Io-Ta)
C=200pF R=0
ESD DISPERSION MAP
C=100pF R=1.5k
CASE TEMPARATURE:Tc() Derating curv e (Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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