View SFH900_1002047.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SFH 900
Miniatur-Reflexlichtschranken Miniature Light Reflection Switches
SFH 900
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Reflexlichtschranken fur den Nahbereich (bis 5 mm Abstand) q IR-GaAs-Lumineszenzdiode q Si-NPN-Fototransistor q Flaches Kunststoffgehause q Tageslichtsperrfilter q Hoher Kollektor-Emitter-Strom 0.25 ... 1.0 mA q Geringe Sattigungsspannung q Kein Ubersprechen Anwendungen
q q q q
Features q Designed for short distances up to 5 mm q GaAs infrared emitter q Silicon NPN phototransistor detector q Flat plastic package q Daylight filter against undesired light effects q High collector-emitter current o.25 ... 1.0 mA q Low saturation voltage q No cross talk
Applications
q q q q
Positionsmelder Endabschalter Drehzahluberwachung Bewegungssensor
Position reporting Devices and end position switches Speed monitoring Various types of motion transmitters
Semiconductor Group
1
03.96
feo06270
SFH 900
Typ Type SFH 900-1 SFH 900-2 SFH 900-1/21) SFH 900-3 SFH 900-4 SFH 900-3/42)
1) 1) 2) 2)
Bestellnummer Ordering Code Q62702-P1187 Q62702-P935 Q62703-P1783 Q62703-P1088 Q62703-P1087 Q62703-P1784
Geliefert werden die einzelnen Gruppen 1 bzw. 2. We supply the bins 1 and/or 2. Geliefert werden die einzelnen Gruppen 3 bzw. 4. We supply the bins 3 and/or 4.
Grenzwerte (TA = 40 C) Maximum Ratings Bezeichnung Description Sender (IR-GaAs-Lumineszenzdiode) Emitter (GaAs infrared diode) Sperrspannung Reverse voltage Vorwartsgleichstrom Forward current Vorwartsstostrom, tp 10 s Surge current Verlustleistung Power dissipation Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Kollektor-Emitter-Sperrspannung Collector-emitter voltage Emitter-Kollektor-Sperrspannung Emitter-collector voltage Kollektorstrom Collector current Symbol Symbol Wert Value Einheit Unit
VR IF IFSM Ptot
6 50 1.5 80
V mA A mW
VCEO VECO IC
30 7 10
V V mA
Semiconductor Group
2
SFH 900
Bezeichnung Description Verlustleistung Total power dissipation Reflexlichtschranke Light reflection switch Lagertemperatur Storage temperature range Umgebungstemperatur Ambient temperature range Sperrschichttemperatur Junction temperature range Lottemperatur (Lotstelle 3 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature (Dip soldering time t 3 s at 3 mm from package) mit Warmeabfuhrung vom Gehause with heat sink between case and soldering Verlustleistung Total power dissipation Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Sender (IR-GaAs-Lumineszenzdiode) Emitter (GaAs infrared diode) Durchlaspannung Forward voltage IF = 50 mA Durchbruchspannung Breakdown voltage IR = 10 A Sperrstrom Reverse current VR = 6 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Semiconductor Group
Symbol Symbol
Wert Value 100
Einheit Unit mW
Ptot
Tstg TA Tj TS
- 40 ... + 85 - 40 ... + 85 100 235
C C C C
TS Ptot
260 150
C mW
Symbol Symbol
Wert Value
Einheit Unit
VF
1.25 ( 1.65)
V
VBR
6
V
IR
0.01 ( 10)
A
CO
40
pF
3
SFH 900
Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Warmewiderstand Thermal resistance Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Kapazitat Capacitance VCE = 5 V, f = 1 MHz Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 10 V Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx Warmewiderstand Thermal resistance Reflexlichtschranke Light Reflection Switch Kollektor-Emitterstrom Collector-emitter current Kodak neutral white test card, 90% reflexion IF = 10 mA; VCE = 5 V; d = 1 mm SFH 900 SFH 900-11) SFH 900-2 SFH 900-3 SFH 900-41) Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage Kodak neutral white test card, 90% reflexion IF = 10 mA; d = 1 mm; SFH 900, IC = 85 A SFH 900-11), IC = 85 A SFH 900-2, IC = 135 A SFH 900-3, IC = 215 A SFH 900-41), IC = 335 A
1) 1)
Symbol Symbol
Wert Value 750
Einheit Unit K/W
RthJA
CCE
11
pF
ICEO
20 ( 200)
nA
IP
3.5
mA
RthJA
600
mW
ICE ICE ICE ICE ICE
> 0.25 0.25 ... 0.50 0.40 ... 0.80 0.63 ... 1.25 1.0
mA mA mA mA mA
VCE sat VCE sat VCE sat VCE sat VCE sat
0.2 ( 0.6) 0.2 ( 0.6) 0.2 ( 0.6) 0.2 ( 0.6) 0.2 ( 0.6)
V V V V V
Nur auf Anfrage lieferbar. Available only on request.
Semiconductor Group
4
SFH 900
Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 1 mA1), RL = 1 k) Switching Times Bezeichnung Description Einschaltzeit Turn-on time Anstiegzeit Rise time Ausschaltzeit Turn-off time Abfallzeit Fall time
1) 1)
Symbol Symbol
Wert Value 65 50 55 50
Einheit Unit s s s s
tein ton tr taus toff tf
IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors
vom Bauteil (d)
IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between
reflector and component (d)
Output characteristics (typ.) IC = f (VCE) spacing to reflector: d = 1 mm, 90% reflection, TA = 25 oC
Transistor capacitance (typ.) CCE = f (VCE), TA = 25 oC, f = 1 MHz
Semiconductor Group
5
SFH 900
Collector current
IC -------------- = f ( d ) I Cmax
Forward voltage (typ.) of the diode VF = f (IF)
Max. permissible forward current IF = f (TA)
Permissible power dissipation for diode and transistor Ptot = f (TA)
Permissible pulse handling capability IF = f (tp), D = parameter, TA = 25 oC
Switching characteristics t = f (RL), TA = 25 oC, IF = 10 mA
Relative spectral emission of emitter (GaAs) and detector (Si) Emitter: Irel = f (), Detector: Srel = f ()
Collector current, spacing d to reflector = 1 mm, 90% reflection
Output characteristics, IC = f (VCE) spacing to reflector: d = 1 mm, 90% reflection, TA = 25 oC
Semiconductor Group
6

▲Up To Search▲

Price & Availability of SFH900

	To Download SFH900 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .