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WS1M32-XG3X
1Mx32 SRAM MODULE
FEATURES
s Access Time of 70, 85, 100, 120ns s 84 lead, 28mm CQFP, (Package 511)
PRELIMINARY*
s TTL Compatible Inputs and Outputs s 5 Volt Power Supply s Low Power CMOS s Weight - 20 grams typical
* This data sheet describes a product under development, not fully characterized, and is subject to change without notice.
s Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8 s Commercial, Industrial and Military Temperature Ranges
PIN CONFIGURATION FOR WS1M32-XG3X TOP VIEW
GND I/O31 I/O30 I/O29 I/O28 I/O27 I/O26 I/O25 I/O24 NC NC NC I/O23 I/O22 I/O21 I/O20 I/O19 I/O18 I/O17 I/O16 VCC
PIN DESCRIPTION
I/O0-31 A0-18 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enables Power Supply Ground Not Connected
11 10 9 8 7 6 5 4 3 2 1 84 83 82 81 80 79 78 77 76 75 VCC A0 A1 A2 A3 A4 A5 A6 OE1 OE2 OE3 OE4 NC A7 A8 A9 A10 A11 A12 A13 GND 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
8 8
WE1-4
74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 GND NC NC NC NC NC NC NC NC WE4 WE3 WE2 WE1 NC NC A18 A17 A16 A15 A14 VCC
4
SRAM MODULES
CS1-2 OE1-4 VCC GND NC
BLOCK DIAGRAM
OE1 W E 1 OE2 W E 2 OE3 W E 3 OE4 W E 4
CS1 A0-18
2M 8 512K xx 8
512K x 8
2M 8 512K xx 8
512K x 8
2M 8 512K xx 8 2M 512K x 8
512K x 8 512K x 8
8
8
VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS1 NC CS2 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 GND
CS2 I/O0-7 I/O8-15 I/O16-23 I/O24-31
NOTE: CS1& CS2 are used as bank select
The White 84 lead G3 CQFP fills the same fit and function as the JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form.
1.146"
May 2001 Rev. 2
1
White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com
WS1M32-XG3X
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC -0.5 Min -40 -65 -0.5 Max +85 +150 Vcc + 0.5 150 7.0 Unit C C V C V Parameter OE1-4 capacitance WE1-4 capacitance CS1-2 capacitance Data I/O capacitance Address input capacitance
CAPACITANCE (TA = +25C)
Symbol COE CWE CCS CI/O CAD Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz Max 30 30 30 30 100 Unit pF pF pF pF pF
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp (Ind.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.5 -40 Max 5.5 VCC + 0.3 +0.8 +85 Unit V V V C CS1 H L L L H H H L CS2 H H H H L L L L OE X L H X L H X X
TRUTH TABLE
WE X H H L H H L X Mode Data I/O Power Standby High Z Standby Read Data Out Active Out Disable High Z Active Write Data In Active Read Data Out Active Out Disable High Z Active Write Data In Active Invalid State Invalid State Invalid State
4
SRAM MODULES
DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C)
Parameter Input Leakage Current Output Leakage Current Operating Supply Current x 32 Mode Standby Current Standby Current (Low Power) Output Low Voltage Output High Voltage Symbol ILI ILO ICC x 32 ISB ISB2 VOL VOH Conditions Min VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to VCC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 IOL = 8mA, Vcc = 4.5 IOH = -4.0mA, Vcc = 4.5 2.4 Max 10 10 220 10 900 0.4 Units A A mA mA A V V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
White Microelectronics * Phoenix, AZ * (602) 437-1520
2
WS1M32-XG3X
AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C)
Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA tOH tACS tOE tCLZ 1 tOLZ 1 tCHZ 1 tOHZ 1 10 5 25 25 5 70 35 10 5 25 25 Symbol Min 70 70 5 85 40 10 5 35 35 -70 Max Min 85 85 5 100 50 10 5 35 35 -85 Max Min 100 100 5 120 60 -100 Max Min 120 120 -120 Max ns ns ns ns ns ns ns ns ns Units
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C)
Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time tWC tCW tAW tDW tWP tAS tAH tOW 1 tWHZ 1 tDH 0 Symbol Min 70 60 60 30 50 0 5 5 25 0 -70 Max Min 85 75 75 30 50 0 5 5 25 0 -85 Max -100 Min 100 80 80 40 60 0 5 5 35 0 Max -120 Min 120 100 100 40 60 0 5 5 35 Max ns ns ns ns ns ns ns ns ns ns Units
4
SRAM MODULES
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
I OL Current Source
AC TEST CONDITIONS
Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V
D.U.T. C eff = 50 pf
VZ
1.5V
Output Timing Reference Level
(Bipolar Supply)
I OH Current Source
NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
3
White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com
WS1M32-XG3X
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
tAA
CS
tRC
ADDRESS
tACS tCLZ
OE
tCHZ
tAA tOH
DATA I/O
PREVIOUS DATA VALID DATA VALID
tOE tOLZ
DATA I/O
HIGH IMPEDANCE
tOHZ
DATA VALID
READ CYCLE 1 (CS = OE = VIL, WE = VIH)
READ CYCLE 2 (WE = VIH)
4
WRITE CYCLE - WE CONTROLLED
SRAM MODULES
tWC
ADDRESS
tAW tCW
CS
tAH
tAS
WE
tWP tOW tWHZ tDW tDH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
tWC
ADDRESS
WS32K32-XHX
tCW tAH
tAS
CS
tAW
tWP
WE
tDW
DATA I/O
DATA VALID
tDH
WRITE CYCLE 2, CS CONTROLLED
White Microelectronics * Phoenix, AZ * (602) 437-1520
4
WS1M32-XG3X
PACKAGE 511:
84 LEAD, CERAMIC QUAD FLAT PACK (G3)
30.23 (1.190) 0.25 (0.010) SQ 27.18 (1.070) 0.25 (0.010) SQ 4.29 (0.169) 0.28 (0.011) 4.12 (0.162) 0.20 (0.008)
Pin 1
0.25 (0.010) 0.03 (0.002)
R 0.127 (0.005) MIN 29.11 (1.146) 0.25 (0.010)
+
1 / 7 1.02 (0.040) 0.12 (0.005)
0.19 (0.008) 0.06 (0.003)
DETAIL A
4
SRAM MODULES
1.27 (0.050) TYP 0.38 (0.015) 0.05 (0.002) 25.40 (1.000) TYP SEE DETAIL "A" 0.27 (0.011) 0.04 (0.001)
The White 84 lead G3 CQFP fills the same fit and function as the JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form.
1.146"
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com
WS1M32-XG3X
ORDERING INFORMATION W S 1M32 - XXX G3 X X
LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened I = Industrial C = Commercial
-55C to +125C -40C to +85C 0 to +70C
PACKAGE TYPE: G3 = 28 mm CQFP (Package 511) ACCESS TIME (ns)
4
SRAM MODULES
White Microelectronics * Phoenix, AZ * (602) 437-1520
ORGANIZATION, two banks of 512Kx32 User configurable as 1Mx16 or 2Mx8 SRAM WHITE ELECTRONIC DESIGNS
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