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| BYM 300 A 120 DN2 Diode Power Module Preliminary data * Inside fast free-wheeling diode * Package with insulated metal base plate * Diode especially for brake choppers * matched with BSM 300 GA 120 DN 2 Type BYM 300 A 120 DN2 Maximum Ratings Parameter Diode reverse voltage VR25 IFDC Package SINGLE DIODE 1 Ordering Code C67067-A2900-A70 1200V 450A Symbol Values 1200 Unit V A VR25 IFDC 450 300 Tj = 25 C DC current TC = 25 C TC = 80 C Pulsed diode current, tp = 1 ms IFpuls 900 600 TC = 25 C TC = 80 C i 2t-value, tP = 10 ms Tj = 0 C Power dissipation per diode i 2t 42000 A2s W 1000 + 150 -55 ... + 150 0.125 2500 20 11 F 55 / 150 / 56 Jan-09-1997 sec K/W Vac mm C PD Tj Tstg RthJC Vis 1 TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group BYM 300 A 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Free-Wheel Diodes Diode forward voltage VF 2.3 1.8 0.6 6 2.8 - V IF = 300 A, VGE = 0 V, Tj = 25 C IF = 300 A, VGE = 0 V, Tj = 125 C Reverse current IR 0.8 - mA VCA = 1200 V, Tj = 25 C VCA = 1200 V, Tj = 125 C Reverse recovery time trr 0.55 - s IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s Tj = 25 C Tj = 125 C 14 40 - Semiconductor Group 2 Jan-09-1997 BYM 300 A 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 1100 W Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode K/W Ptot 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 160 ZthJC 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 600 A 500 IF 450 400 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 Tj=125C Tj=25C VF Semiconductor Group 3 Jan-09-1997 BYM 300 A 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 4 Jan-09-1997 |
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